MBRT120150

更新时间:2024-09-18 22:04:44
品牌:GENESIC
描述:Silicon Power Schottky Diode

MBRT120150 概述

Silicon Power Schottky Diode 整流二极管

MBRT120150 规格参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PUFM-X3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.54
应用:POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JESD-30 代码:R-PUFM-X3最大非重复峰值正向电流:800 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:150 V
最大反向电流:1000 µA表面贴装:NO
技术:SCHOTTKY端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

MBRT120150 数据手册

通过下载MBRT120150数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
MBRT120150 thru MBRT120200R  
VRRM = 150 V - 200 V  
IF(AV) = 120 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 150 V to 200 V VRRM  
Three Tower Package  
• Isolation Type Package  
• Electrically Isolated Base Plate  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBRT120200(R)  
Parameter  
Symbol  
MBRT120150(R)  
Unit  
VRRM  
VRMS  
VDC  
Tj  
200  
141  
Repetitive peak reverse voltage  
RMS reverse voltage  
150  
106  
V
V
200  
DC blocking voltage  
150  
V
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 125 °C  
MBRT120200(R)  
Parameter  
Symbol  
IF(AV)  
MBRT120150(R)  
Unit  
A
Average forward current (per  
pkg)  
120  
800  
0.92  
120  
800  
Peak forward surge current  
(per leg)  
IFSM  
tp = 8.3 ms, half sine  
A
Maximum instantaneous forward  
voltage (per leg)  
VF  
IR  
IFM = 60 A, Tj = 25 °C  
V
0.88  
Tj = 25 °C  
Tj = 100 °C  
Tj = 150 °C  
1
1
Maximum instantaneous  
reverse current at rated DC  
blocking voltage (per leg)  
10  
30  
mA  
10  
30  
Thermal characteristics  
Thermal resistance, junction-  
case (per leg)  
RΘJC  
0.80  
0.80  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbrt120150.pdf  
MBRT120150 thru MBRT120200R  
2
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbrt120150.pdf  
MBRT120150 thru MBRT120200R  
Package dimensions and terminal configuration  
Product is marked with part number and terminal configuration.  
3
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbrt120150.pdf  

MBRT120150 相关器件

型号 制造商 描述 价格 文档
MBRT120150R GENESIC Silicon Power Schottky Diode 获取价格
MBRT120150_V01 GENESIC Silicon Power Schottky Diode 获取价格
MBRT12020 AMERICASEMI HIGH POWER -SCHOTTKY RECTIFIERS 获取价格
MBRT120200 GENESIC Silicon Power Schottky Diode 获取价格
MBRT120200R GENESIC Silicon Power Schottky Diode 获取价格
MBRT12020R AMERICASEMI HIGH POWER -SCHOTTKY RECTIFIERS 获取价格
MBRT12030 AMERICASEMI HIGH POWER -SCHOTTKY RECTIFIERS 获取价格
MBRT12030R AMERICASEMI HIGH POWER -SCHOTTKY RECTIFIERS 获取价格
MBRT12035 AMERICASEMI HIGH POWER -SCHOTTKY RECTIFIERS 获取价格
MBRT12035R AMERICASEMI HIGH POWER -SCHOTTKY RECTIFIERS 获取价格

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