MBRTA60030RL [GENESIC]
Low VF Silicon Power Schottky Diode;
| 型号： | MBRTA60030RL |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Low VF Silicon Power Schottky Diode |
| 文件： | 总3页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRTA60030(R)L
VRRM = 30 V
IF(AV) = 600 A
Low VF Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 30 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Conditions
Parameter
MBRTA60030(R)L Unit
VRRM
VRMS
VDC
Tj
Maximum recurrent peak reverse voltage
Maximum RMS voltage
30
21
V
V
Maximum DC blocking voltage
Operating temperature
30
V
-55 to 150
-55 to 150
°C
°C
Tstg
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Parameter
MBRTA60030(R)L Unit
IF(AV)
IFSM
TC = 100 °C
Average forward current (per pkg)
Peak forward surge current (per leg)
600
A
A
tp = 8.3 ms, half sine
4000
Maximum instantaneous forward voltage (per
leg)
VF
I
FM = 300 A, Tj = 25 °C
V
0.58
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Tj = 25 °C
3
IR
mA
Tj = 100 °C
250
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
0.28
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA60030(R)L
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA60030(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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