MBRTA800200R [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBRTA800200R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode 局域网 二极管 |
| 文件： | 总3页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRTA800150 thru MBRTA800200R
VRRM = 150 V - 200 V
IF(AV) = 800 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRTA800200(R)
Parameter
Symbol
MBRTA800150(R)
Unit
Repetitive peak reverse
voltage
VRRM
200
150
V
VRMS
VDC
Tj
141
RMS reverse voltage
106
V
V
200
DC blocking voltage
Operating temperature
Storage temperature
150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 100 °C
MBRTA800200(R)
Parameter
Symbol
IF(AV)
IFSM
MBRTA800150(R)
Unit
A
Average forward current (per
pkg)
800
6000
0.92
800
6000
0.88
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 400 A, Tj = 25 °C
A
Maximum instantaneous
forward voltage (per leg)
VF
V
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
5
5
Reverse current at rated DC
blocking voltage (per leg)
IR
10
50
mA
10
50
Thermal characteristics
Thermal resistance, junction -
case (per leg)
RΘJC
0.25
0.25
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA800150 thru MBRTA800200R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA800150 thru MBRTA800200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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