MBRTA80045R [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBRTA80045R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode 局域网 二极管 |
| 文件： | 总3页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRTA80045 thru MBRTA800100R
VRRM = 45 V - 100 V
IF(AV) = 800 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRTA80080(R)MBRTA800100(R)
Unit
Parameter
Symbol
MBRTA80045(R) MBRTA80060(R)
Repetitive peak reverse
voltage
VRRM
80
100
45
60
V
VRMS
VDC
Tj
56
70
RMS reverse voltage
32
42
V
V
80
100
DC blocking voltage
Operating temperature
Storage temperature
45
60
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 100 °C
MBRTA80080(R)MBRTA800100(R)
Parameter
Symbol
IF(AV)
IFSM
MBRTA80045(R) MBRTA80060(R)
Unit
A
Average forward current
(per pkg)
800
6000
0.84
800
6000
0.84
800
6000
0.72
800
6000
0.78
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 400 A, Tj = 25 °C
A
Maximum instantaneous
forward voltage (per leg)
VF
V
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
1
1
1
Reverse current at rated
DC blocking voltage (per
leg)
IR
10
50
10
50
mA
10
50
10
50
Thermal characteristics
Thermal resistance,
junction - case (per leg)
RΘJC
0.25
0.25
0.25
0.25
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA80045 thru MBRTA800100R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA80045 thru MBRTA800100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
相关型号：
MBRX02520-TP
Rectifier Diode, Schottky, 1 Element, 0.25A, 20V V(RRM), Silicon, PLASTIC PACKAGE-2
MCC
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