MSRT100160A [GENESIC]
High Surge Capability;
| 型号： | MSRT100160A |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | High Surge Capability |
| 文件： | 总3页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSRT100120(A)D thru MSRT100160(A)D
VRRM = 1200 V - 1600 V
IF(AV) = 100 A
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 1200 V to 1600 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRT100XXXD
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Conditions
MSRT100120(A)D MSRT100140(A)D MSRT100160(A)D
Parameter
Symbol
Unit
VRRM
VRMS
VDC
Tj
1200
848
1400
990
1600
1131
Repetitive peak reverse voltage
RMS reverse voltage
V
V
1200
1400
1600
DC blocking voltage
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Operating temperature
Storage temperature
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 140 °C
MSRT100120(A)D MSRT100140(A)D MSRT100160(A)D
Parameter
Symbol
IF(AV)
IFSM
Unit
A
Average forward current (per
leg)
100
2000
1.1
100
2000
1.1
100
2000
1.1
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 100 A, Tj = 25 °C
A
Maximum instantaneous
forward voltage (per leg)
VF
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Tj = 25 °C
10
5
10
5
10
5
μA
IR
Tj = 150 °C
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘjc
0.45
0.45
0.45
°C/W
1
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
MSRT100120(A)D thru MSRT100160(A)D
2
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
MSRT100120(A)D thru MSRT100160(A)D
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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