MSRTA20060AD_18 [GENESIC]
Silicon Standard Recovery Diode;
| 型号： | MSRTA20060AD_18 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Standard Recovery Diode |
| 文件： | 总3页 (文件大小：644K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSRTA20060(A)D thru MSRTA200100(A)D
VRRM = 600 V - 1000 V
IF(AV) = 200 A
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1000 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRTA200XXAD MSRTA200XXADR
MSRTA200XXD
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Conditions
MSRTA20060(A)D MSRTA20080(A)D MSRTA200100(A)D
Parameter
Symbol
Unit
VRRM
VDC
Tj
600
800
1000
1000
Repetitive peak reverse voltage
DC blocking voltage
V
V
600
800
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Operating temperature
Storage temperature
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MSRTA20060(A)D MSRTA20080(A)D MSRTA200100(A)D
Parameter
Symbol
IF(AV)
IFSM
Unit
A
Average forward current (per
leg)
TC = 125 °C
200
3000
1.1
200
3000
1.1
200
3000
1.1
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 200 A, Tj = 25 °C
A
Maximum instantaneous
forward voltage (per leg)
VF
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Tj = 25 °C
10
5
10
5
10
5
μA
IR
Tj = 150 °C
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘjc
0.35
0.35
0.35
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/msrta20060ad.pdf
MSRTA20060(A)D thru MSRTA200100(A)D
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/msrta20060ad.pdf
MSRTA20060(A)D thru MSRTA200100(A)D
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MSRTA200XXAD
MSRTA200XXADR
MSRTA200XXD
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/msrta20060ad.pdf
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