MURH10060R [GENESIC]
Silicon Super Fast Recovery Diode;
| 型号： | MURH10060R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Super Fast Recovery Diode |
| 文件： | 总3页 (文件大小：650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURH10040 thru MURH10060R
VRRM = 400 V - 600 V
IF(AV) = 100 A
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V VRRM
• Not ESD Sensitive
D-67 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MURH10060(R)
Parameter
Symbol
MURH10040(R)
Unit
VRRM
600
Repetitive peak reverse voltage
400
V
VRMS
VDC
Tj
420
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
280
V
V
600
400
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MURH10060(R)
Parameter
Symbol
MURH10040(R)
Unit
TC = 140 °C
tp = 8.3 ms, half sine
IFM = 100 A, Tj = 25 °C
Tj = 25 °C
IF(AV)
IFSM
VF
100
2000
1.70
Average forward current (per pkg)
Peak forward surge current
100
2000
1.30
A
A
V
Maximum instantaneous forward
voltage
25
3
25
3
μA
Maximum reverse current at rated
DC blocking voltage
IR
Tj = 125 °C
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
mA
Trr
110
Maximum reverse recovery time
90
nS
Thermal characteristics
Maximum thermal resistance,
junction - case
RΘJC
0.45
0.45
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murh10040.pdf
MURH10040 thru MURH10060R
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murh10040.pdf
MURH10040 thru MURH10060R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murh10040.pdf
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