MURT10005R [GENESIC]
Silicon Super Fast Recovery Diode;
| 型号： | MURT10005R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Super Fast Recovery Diode 超快速恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURT10005 thru MURT10020R
VRRM = 50 V - 200 V
IF(AV) = 100 A
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MURT10020(R)
Parameter
Symbol
MURT10005(R)
MURT10010(R)
Unit
VRRM
200
Repetitive peak reverse voltage
50
100
V
VRMS
VDC
Tj
141
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
35
71
V
V
200
50
100
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 140 °C
MURT10020(R)
Parameter
Symbol
IF(AV)
IFSM
MURT10005(R)
MURT10010(R)
Unit
A
Average forward current (per
pkg)
100
100
100
Peak forward surge current (per
leg)
tp = 8.3 ms, half sine
1500
1500
1500
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 50 A, Tj = 25 °C
1.0
V
1.0
1.0
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Tj = 25 °C
25
1
25
1
25
1
μA
IR
Tj = 125 °C
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
Maximum reverse recovery
time (per leg)
Trr
75
75
75
nS
Thermal characteristics
Thermal resistance, junction -
case (per leg)
RΘJC
1.0
1.0
1.0
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murt10005.pdf
MURT10005 thru MURT10020R
2
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murt10005.pdf
MURT10005 thru MURT10020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murt10005.pdf
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