S300B_18 [GENESIC]
Silicon Standard Recovery Diode;
| 型号： | S300B_18 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Standard Recovery Diode |
| 文件： | 总3页 (文件大小：753K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S300B thru S300JR
VRRM = 100 V - 600 V
IF = 300 A
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V VRRM
• Not ESD Sensitive
DO-9 Package
C
A
A
C
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
S300J (R)
Parameter
Symbol
S300B (R)
S300D (R)
S300E (R) S300G (R)
Unit
Repetitive peak reverse
voltage
VRRM
600
100
200
300
400
V
VRMS
VDC
420
600
RMS reverse voltage
DC blocking voltage
70
140
200
212
300
280
400
V
V
100
Continuous forward
current
TC ≤ 130 °C
IF
300
300
300
300
300
A
Surge non-repetitive
forward current, Half Sine
Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
6850
6850
6850
6850
6850
A
Tj
-55 to 150
-55 to 150
Operating temperature
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
S300J (R)
Parameter
Symbol
S300B (R)
S300D (R)
S300E (R) S300G (R)
Unit
VF
IR
IF = 300 A, Tj = 25 °C
VR = 100 V, Tj = 25 °C
VR = 100 V, Tj = 175 °C
1.2
10
12
V
Diode forward voltage
Reverse current
1.2
10
12
1.2
10
12
1.2
10
12
1.2
10
12
μA
mA
Thermal characteristics
Thermal resistance,
junction - case
RthJC
0.16
0.16
0.16
0.16
0.16
°C/W
1
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/s300b.pdf
S300B thru S300JR
2
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/s300b.pdf
S300B thru S300JR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO-9 (DO--205AB)
H
I
F
C
A
C
B
A
D
Stud Stud
(R)
G
C
E
A
3
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/s300b.pdf
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