2N6500 [GESS]

HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS; 高速外延集电极NPN硅平面晶体管
2N6500
元器件型号: 2N6500
生产厂家: GE SOLID STATE    GE SOLID STATE
描述和应用:

HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS
高速外延集电极NPN硅平面晶体管

晶体 晶体管 局域网
PDF文件: 总7页 (文件大小:417K)
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型号参数:2N6500参数

2N6500E3

Power Bipolar Transistor, 4A I(C), 90V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,

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2 MICROSEMI

2N6502

SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS

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22 ETC

2N6502

SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS

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32 ETC

2N6502

Dual Transistors

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50 CENTRAL

2N6502LEADFREE

暂无描述

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1 CENTRAL

2N6504

Silicon Controlled Rectifiers

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104 ONSEMI

2N6504

Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS

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40 ONSEMI

2N6504

THYRISTORS SILICON CONTROLLED RECTIFIERS

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31 NJSEMI

2N6504

25A, 50V, SCR, TO-220AB, CASE 221A-07, 3 PIN

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0 ONSEMI

2N6504

Thyristor SCR 50V 250A 3-Pin(3+Tab) TO-220AB Bulk

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2 NJSEMI

2N6504/D

Silicon Controlled Rectifiers

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43 ONSEMI

2N6504_06

Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS

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36 ONSEMI

2N6504-16

25A, 50V, SCR, TO-220AB, TO-220, 2 PIN

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1 MOTOROLA

2N6504-AJ

25A, 50V, SCR, TO-220AB

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0 MOTOROLA

2N6504-AK

Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB

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0 MOTOROLA