C106N [GE]
4-A Sensitive-Gate Silicon Controlled Rectifiers; 4 -A敏感栅可控硅整流器
| 型号： | C106N |
| 厂家： | 
GENERAL ELECTRIC COMPANY |
| 描述： | 4-A Sensitive-Gate Silicon Controlled Rectifiers |
| 文件： | 总1页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
C106Q
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 15; Max TMS Bridge Input Voltage: 2.55; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-126
DIGITRON
C106Q-1
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3
NEC
C106Q-2
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, PLASTIC PACKAGE-3
NEC
C106Q-3
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-2
NEC
C106Q-AY
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3
NEC
C106Q-BY
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3
NEC
C106Q-YB
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3
NEC
C106Q-YC
Silicon Controlled Rectifier, 4A I(T)RMS, 15V V(DRM), 15V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3
NEC
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