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W2VS-A1A15-P/K

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

M2SES-2B2-M2

 Super-mini Signal Conditioners Mini-M Series
暂无信息
MSYSTEM

M2SES-2H4-P/Q

 Super-mini Signal Conditioners Mini-M Series
暂无信息
MSYSTEM

W2VS-15AA-R/K

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

W2VS-162B-R/Q

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

W2VS-161B-M2/Q

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

ED11R256-644SARDP

 ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs
动态存储器 双倍数据速率
EOREX

W2VS-A1A1-R/CE

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

W2VS-1512-R

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

GRM0332C2A8R9DA01#

 民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗 医疗器械
MURATA

ED11R127-25ASARDP

 ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs
动态存储器 双倍数据速率
EOREX

MLS-4W4W-C

 Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

KTS-02-D/BN

 Plug-in Signal Conditioners K-UNIT
暂无信息
MSYSTEM

RL-2260-43-16

 ALL IN ONE™ POWER TRANSFORMERS
变压器
RENCO

MLS-4WA-H/Q

 Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

M2SES-2B3-M/UL

 Super-mini Signal Conditioners Mini-M Series
暂无信息
MSYSTEM

MLS-4WB-B/E

 Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

H5TC4G43BFR-XXA

 4Gb DDR3L SDRAM
动态存储器 双倍数据速率
HYNIX

W2VS-211-R/K

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

M2SES-1CB-R2/UL

 Super-mini Signal Conditioners Mini-M Series
暂无信息
MSYSTEM

MLS-4W2-C/E

 Plug-in Signal Conditioners M-UNIT
暂无信息
MSYSTEM

GRM155R71H822JA88#

 民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗 医疗器械
MURATA

ED11R126-644MBTEL

 ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs
动态存储器 双倍数据速率
EOREX

W2VS-11B-P/Q

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

W2VS-161Y-M2/CE

 Space-saving Dual Output Signal Conditioners Mini-MW Series
暂无信息
MSYSTEM

IMBG120R140M1H

 是采用D2PAK-7L (TO-263-7)封装的1200 V, 140 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。
电机 驱动
INFINEON

HQA2W085W050V-007-S

 DC-DC开关电源
开关
TDK

VJ0505DR2RKXEQJHT

 Surface Mount Multilayer Ceramic Chip Capacitors for High Temperatures 175 °C / 200 °C
暂无信息
VISHAY

LP5910-1.725YKAR

 LP5910 300-mA Low-Noise, Low-IQ LDO
暂无信息
TI

S26KS512SDGBHV030

 HYPERFLASH™
暂无信息
INFINEON
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