GDSSF8421 [GOOD-ARK]
High Power and current handing capability;
| 型号： | GDSSF8421 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | High Power and current handing capability |
| 文件： | 总4页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GDSSF8421
GENERAL FEATURES
●N-Channel
VDS = 20V,ID = 4.5A
RDS(ON) < 40mΩ @ VGS=2.5V
RDS(ON) < 30mΩ @ VGS=4.5V
Schematic diagram
●P-Channel
VDS = -20V,ID = -3.5A
RDS(ON) < 85mΩ @ VGS=-2.5V
RDS(ON) < 50mΩ @ VGS=-4.5V
Marking and pin Assignment
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
8421
SSF8421
TSSOP-8
Ø330mm
12mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
ID
N-Channel P-Channel
Unit
V
20
±12
4.5
30
-20
±12
-3.5
-30
1.0
Gate-Source Voltage
V
A
Drain Current-Continuous@Current-Pulsed
(Note 1)
IDM
A
Maximum Power Dissipation
PD
1.0
W
Operating Junction and Storage Temperature
Range
TJ,TSTG
-55 To 150 -55 To 150
℃
THERMAL CHARACTERISTICS
N-Ch
P-Ch
83
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
℃/W
100
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF8421
VGS=0V ID=250μA
VGS=0V ID=-250μA
VDS=20V,VGS=0V
VDS=-20V,VGS=0V
N-Ch
20
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-20
1
IDSS
μA
nA
-1
±100
±100
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IGSS
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VDS=VGS,ID=-250μA
VGS=4.5V, ID=4.5A
VGS=-4.5V, ID=-3.5A
VGS=2.5V, ID=3.9A
VGS=-2.5V, ID=-2.7A
VDS=10V,ID=4.5A
N-Ch
0.6
VGS(th)
V
mΩ
S
P-Ch -0.6
N-Ch
23
40
30
60
20
10
30
50
40
85
P-Ch
Drain-Source On-State Resistance RDS(ON)
N-Ch
P-Ch
N-Ch
Forward Transconductance
gFS
VDS=-10V,ID=-3.5A
P-Ch
SWITCHING CHARACTERISTICS (Note 4)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
22
27
40
30
50
55
20
21
10
14
2.5
3.5
3.0
3.5
50
50
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
nS
nS
nS
nS
nC
nC
nC
N-Ch
VDD=10 V,ID=1A
VGEN=10V,RGEN=6Ω
80
tr
60
100
100
40
td(off)
P-Ch
VDD=-10V,ID=-1A
VGEN=-10V,RGEN=6Ω
tf
40
20
Qg
Qgs
Qgd
N-Ch
25
VDS=15V,ID=4.5A,VGS=4.5V
P-Ch
VDS=-15V,ID=-4.5A,VGS=-3.5V
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF8421
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=1.25A
VGS=0V,IS=-1.25A
N-Ch
P-Ch
1.2
V
V
Diode Forward Voltage (Note 3)
VSD
-1.2
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
N-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 1: Normalized Maximum Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 2: Normalized Maximum Transient Thermal Impedance
TSSOP-8 PACKAGE INFORMATION
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF8421
Dimensions in Millimeters (UNIT:mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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