GS8550M-C [GOOD-ARK]
Small Signal Bipolar Transistor,;
| 型号： | GS8550M-C |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总4页 (文件大小：482K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSꢀ550M
PNPꢁꢂꢃꢄꢅꢆꢇꢆꢈꢉꢃ
E
Features
■
■
■
High collector current
General purpose amplifier and switch
Complementary pair with GS8050M
B
C
Schematic Diagram
SOT-23
Absolute Maximum Ratings
(TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
-40
-25
V
V
-6.0
V
-1.5
A
Base Current
IB
-0.5
A
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
PC
625
mW
°C
°C
Tj
150
Tstg
-55～150
hFE Classifications and Marking
hFE Classifications
B
C
D
Symbol
hFE Range
Marking
160-300
85-160
120-200
HY2B
HY2C
HY2D
1/4
GSꢀ550M
PNPꢁꢂꢃꢄꢅꢆꢇꢆꢈꢉꢃ
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
VCBO
VCEO
IC=-0.1mA IE=0
IC=-2.0mA IB=0
-40
-25
-6.0
V
V
VEBO
ICBO
IE=-0.1mA
VCB=-35V
VEB=-6.0V
IC=0
IE=0
IC=0
V
Collector Cut-Off Current
-0.1
-0.1
300
μA
μA
Emitter Cut-Off Current
IEBO
Forward Current Transfer Ratio(1)
Forward Current Transfer Ratio(2)
Forward Current Transfer Ratio(3)
hFE(1)
hFE(2)
hFE(3)
VCE=-1.0V IC=-100mA
VCE=-1.0V IC=-800mA
VCE=-1.0V IC=-5.0mA
85
40
45
Collector-Emitter Saturation
Voltage
VCE(sat) IC=-800mA IB=-80mA
VBE(sat) IC=-800mA IB=-80mA
-0.28
-0.5
V
Base-Emitter Saturation Voltage
Base-Emitter Voltage
-0.98
-0.66
200
-1.2
-1.0
V
V
VBE
fT
VCE=-1.0V IC=-10mA
Transition Frequency
VCE=-10V
IC=-50mA
IE=0
100
MHz
VCB=-10V
f=1.0MHz
Collector Output Capacitance
Cob
15
pF
2/4
GSꢀ550M
PNPꢁꢂꢃꢄꢅꢆꢇꢆꢈꢉꢃ
Ratings and Characteristic Curves
3/4
GSꢀ550M
PNPꢁꢂꢃꢄꢅꢆꢇꢆꢈꢉꢃ
Package Outline Dimensions
SOT-23
www.goodarksemi.com
4/4
Doc.USGS8550MxGD2.2
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