KBP005 [GOOD-ARK]
SINGLE-PHASE SILICON BRIDGE; 单相硅桥
| 型号： | KBP005 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | SINGLE-PHASE SILICON BRIDGE |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBP005 THRU KBP10
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
Forward Current -
50 to 1000 Volts
2.0 Amperes
Features
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Mounting Position: Any
Lead: Silver plated copper lead
D IM E N S IO N S
inches
m m
D IM
N ote
M ax.
M in.
M ax.
0.504
-
M in.
A
B
C
D
E
F
-
-
12.8
-
0.75
19.0
-
-
-
-
0.693
0.25
0.125
0.15
-
-
-
-
17.6
6.4
3.2
3.8
G
0.32 Typ.
0.8 Typ.
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For capacitive load, derate current by 20%.
Symbols KBP005 KBP01 KBP02 KBP04 KBP06 KBP08 KBP10
Units
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
V
V
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
RRM
RMS
V
100
1000
DC
Maximum average forward rectified output current
at TA=50
I(AV)
2.0
50.0
1.0
Amps
Amps
Volt
A
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated load
I
FSM
Maximum forward Voltage drop per bridge element
at 1.0A peak
V
F
Maximum DC reverse current at rated
DC blocking voltage per element
IR
10.0
1.0
Maximum DC reverse current at rated
I
mA
R
DC blocking voltage per element
Operating temperature range
Storage temperature range
T =100
A
T
-55 to +125
-55 to +150
J
T
STG
1
RATINGS AND CHARACTERISTIC CURVES
2
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