LL4148 [GOOD-ARK]

SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
LL4148
型号: LL4148
厂家: GOOD-ARK ELECTRONICS    GOOD-ARK ELECTRONICS
描述:

SILICON EPITAXIAL PLANAR DIODE
硅外延平面二极管

整流二极管 局域网
文件: 总4页 (文件大小:222K)
中文:  中文翻译
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LL4148  
SILICON EPITAXIAL PLANAR DIODE  
Features  
Silicon Epitaxial Planar Diode  
fast switching diode in MiniMELF case especially suited for  
automatic insertion.  
Identical electrically to standard 1N4148  
These diode are delivered taped.  
Details see “Taping”.  
Weight approx. : 0.05g  
DIMENSIONS  
inches  
mm  
DIM  
Note  
Min.  
Max.  
0.142  
0.059  
0.016  
Min.  
3.4  
Max.  
3.6  
A
B
C
0.134  
0.055  
0.008  
1.40  
0.2  
1.50  
0.4  
Absolute Maximum Ratings (Ta=25  
)
Symbols  
VR  
Values  
75  
Units  
Reverse Voltage  
Volts  
Volts  
Peak reverse voltage  
VRM  
100  
Rectified current (Average)  
Half wave rectification with Resist. Load  
at Tamb=25 and f 50Hz  
1)  
IO  
150  
mA  
Surge forward current at t<1s and T=25  
IFSM  
Ptot  
Tj  
500  
mA  
j
1)  
Power dissipation at Tamb=25  
Junction Temperature  
500  
mW  
175  
Storage temperature range  
TS  
-65 to +175  
Note:  
(1) Valid provided that electrodes are kept at ambient temperature  
1
Characteristics at Tj=25  
Symbols  
Min.  
Typ.  
Max.  
Units  
Forward voltage at IF=10mA  
VF  
-
-
1
Volt  
Leakage current  
at V =20V  
at VRR=20V, Tj=150  
I
IRR  
-
-
-
-
-
-
25  
5
50  
nA  
uA  
uA  
at VR=75V  
IR  
Reverse breakdown voltage  
tested wiht 100uA pulses  
V(BR)R  
Ctot  
100  
-
-
-
-
Volts  
F
Capacitance  
at VF=VR=0  
4
Voltage rise when switching ON  
tested with 50mA forward pulses  
tp=0.1uS, rise time<30nS, fp=5 to 100KHz  
Vfr  
-
-
2.5  
4
Volts  
Reverse recovery time  
from IF=10mA to IR=1mA, VR=6V, RL=100  
trr  
-
-
-
-
-
nS  
K/mW  
-
Thermal resistance  
junction to ambient Air  
1)  
RthA  
0.35  
-
Rectification efficiency  
at f=100MHz, VRF=2V  
0.45  
V
Note:  
(1) Valid provided that electrodes are kept at ambient temperature  
Rectification efficiency measurement circuit  
2
RATINGS AND CHARACTERISTIC CURVES  
3
RATINGS AND CHARACTERISTIC CURVES  
4

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