SES3V3N1006-2U [GOOD-ARK]
Ultra Small ESD Protector; 超小型ESD保护
| 型号： | SES3V3N1006-2U |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Ultra Small ESD Protector |
| 文件： | 总4页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SES Series
Ultra Small ESD Protector
SES3V3N1006-2U
ROHS
Description
The SES3V3N1006-2U ESD protector is designed to replace
multilayer varistors (MLVs) in portable applications such as cell
phones, notebook computers, and PDA’s. They feature large cross-
sectional area junctions for conducting high transient currents, offer
desirable electrical characteristics for board level protection, such as
fast response time,lower operating voltage, lower clamping voltage
and no device degradationwhen compared to MLVs. The
SES3V3N1006-2U protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other
voltage induced transient events. The SES3V3N1006-2U is available
in a DFN-2 package with working voltages of 3.3 volt. It gives
designer the flexibility to protect one bidirectional line in applications
where arrays are not practical. Additionally, it may be “sprinkled”
around the board in Fapplications where board space is at a premium.
It may be used to meet the ESD immunity requirements of IEC
61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).
Feature
100 Watts peak pulse power (tp = 8/20μs)
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Small package for use in portable electronics
Suitable replacement for MLVs in ESD protection applications
Protect one I/O or power line
Low clamping voltage
Stand off voltages: 3.3V
Low leakage current
Solid-state silicon-avalanche technology
Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm
Equivalent to 0402 package
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Cordless Phones
Digital Cameras
Peripherals
MP3 Players
Ultra Small ESD Protector
1
www.goodark.com
SES Series
Ultra Small ESD Protector
SES3V3N1006-2U
ROHS
Electrical characteristics @25℃(unless otherwise specified)
Parameter
Working Voltage
Symbol
Conditions
Min.
Typ.
Max.
Units
VRWM
VBR
IR
3.3
V
V
Breakdown voltage
Reverse Leakage Current
Clamping Voltage
It =1mA
5.0
VRWM =3.3V T=25℃
IPP=9.8A tP = 8/20μS
VR=0V f = 1MHz
2.5
μA
V
VC
10.4
Junction Capacitance
Cj
12
pF
Absolute maximum rating @25℃
Rating
Symbol
Value
Units
IEC 61000-4-2 (ESD) Contact
±30
kV
ESD Voltage
Per Human Body Model
Per Machine Model
16
kV
V
400
Peak Pulse Power ( tP = 8/20μS )
Maximum Peak Pulse Current ( tP = 8/20μS )
Lead Soldering Temperature
Operating Temperature
Ppk
Ipp
100
9.8
W
A
TL
260 (10 sec)
-55 to +125
-55 to +150
℃
℃
℃
TJ
Storage Temperature
TSTG
Typical Characteristics
Figure1.Peak pulse power vs pulse time
Ultra Small ESD Protector
2
www.goodark.com
SES Series
Ultra Small ESD Protector
SES3V3N1006-2U
ROHS
Figure2. Pulse wave form
Figure3.Power derating curve
Ultra Small ESD Protector
3
www.goodark.com
SES Series
Ultra Small ESD Protector
SES3V3N1006-2U
ROHS
Product dimension and foot print
Top View
Side View
Common Dimensions (mm)
X1: Extreme thin
PKG.
Ref.
A
Min.
0.4
Nom.
-
Max
0.5
A1
A3
D
0.00
-
0.05
0.125 Ref.
1.00
0.95
0.55
0.20
0.45
1.05
0.65
0.30
0.55
E
0.60
B
0.25
L
0.50
e
0.65 BSC
Bottom View
Foot Print
Revision History
Revision
Date
Changes
1.0
2008-7-3
-
Ultra Small ESD Protector
4
www.goodark.com
相关型号：
©2020 ICPDF网 联系我们和版权申明