SP320C [GOOD-ARK]
Trigger Device;
| 型号： | SP320C |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Trigger Device |
| 文件： | 总7页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R
SOLID STATE OVERVOLTAGE PROTECTOR
S
E M I C O N D U C T O R
GENERAL DESCRIPTION
J
F' SIDAC PROTECTORS (SP)a re d e vic e s use d to p rote c t se nsitive lC's from e le c tric a l d isturba nc e s c a use d by lig hting a nd AC p owe r
c ross c ond itions. The struc ture a nd c ha ra c te ristic s of the thyristor a re use d to c re a te a n ove r-volta g e p rotec tion d e vic e with p re c ise
a nd re p e a ta b le c ha ra c te ristic s. SP ha ve b e e n c hose n firstly in mod e rn c ommunica tions syste m to a void lig htning . The SP op e ra te s
muc h like a switc h. In off-sta te .The d e vic e p re se nts a le a ka g e c urre nt (IDRM) le ss Tha n 2A ma king it invisib le to the c irc uit it is p ro -
te c ting . As a tra nsie nt volta g e e xc e e d s the SP VDRM. the de vic e will b e gin to e nte r its p rote c tive mod e with c ha ra c te ristic s simila r to
a n a va la nc h d iod e . The n, onc e the c urre nt e xc e e d s its switc hing c urre nt, its volta ge de c re a se to turn-on volta g e (V
ie nt c urre nt p a ssing throug h this p a ra lle l c irc uit so the se nsitive c irc uit is p rote c te d . Afte r tra nsie nt, the c urrent d e c re a se s to I
b e low, the SP will re se t a nd re turn to high off-sta te impe d a nc e . The SP turn-on volta g e V is ve ry sma lle r c omp a re d with othe r c li-
T
) with most tra ns-
H
or
T
p p ing protec tion d e vic e . SP c a n b e use d re p e a tly a nd c a n not d e g e ne ra te b e c a use of no c onsump tion.
Please consult us for more information about applications
FEATURES
The SP is the p re d omina nt c hoic e for tod a y's te le c om ne e d s b e c a use it offe rs a bsolute surg e sup p re ssion re g a rd le ss of the surge
c urre nt le ve l a nd ra te of a pp lie d volta g e (d v/d t)unlike othe r d e vic e s, The SP:
Ca n not be da ma g e d volta g e
Elimina te s the hyste re sis a nd he a t d issip a tion typic a lly found with a c la mp ing d evic e
Elimina te s volta g e ove rshoot c a use d b y fa st rising tra nsie nts
Is non-de g e ne ra tive
Will no fa tig ue
Ha s ne g ligible c a p a c ita nc e ma king it ide a l for hig h sp e e d tra nsmission e q uip me nt
APPLICATIONS
Whe n p rote cting te le c ommunic a tion c irc uits the SP is c onne c te d a c ross the TIP-Ring inte rfa c e for me ta llic p rote c tion a nd the
Tip-Ring-Groind inte rfa c e for long itud ina l p rote c tion, typ ic a lly b e hind some type of c urre nt limiting d e vic e suc h a s fuse . Common
a p plic a tions a re :
Ce ntra l offic e line c a rd s.
T-1/E-1,ISDN,a nd DSL tra nsmission e q uip me nt
Customer Pre mise Eq uipme nt(CPR)suc h a s p hone s, mod e ms, a nd c a lle r ID a d junc t b oxe s.
PBX's,KSU's a nd othe r switc he s.
Prima ry p rote c tion inc lud ing ma in distribution fra me s, 5-pins mod ule s, b uild ing e ntra nc e e q uip me nt a nd sta tion p rote c tion
mod ule s
Othe r a p plica tions tha t use SP a re da ta line s, se c urity syste ms, CATV line a mplifie rs& p owe r inse rte rs. The SP is a lso use d to p rote c t
sole noids in sprinkle r syste ms a nd thyristors suc h a s SCR's a nd tria c s in motor sp e e d c ontrols. It should b e note d thoug h tha t whe n
use d in the se a p plic a tions. The short c irc uit AC c urre nt of the c irc uit be ing p rote c te d c a n not e xc e e d the AC c urre nt ra nting of the
H
SP, a nd the short c irc uit DC c urre nt must b e b e low the minimum holding c urre nt (I ) of the SP(in orde r to re se t),
PART NUMBER DEFINITION
SP
XXX
X
SERIES NUMBER
SIDAC PROTECTOR
VOLTAGE RATINGS
030= 27-36V
064= 58-70V
100= 90-125V
120= 120-145V
150= 135-165V
220= 170-225V
240= 190-265V
270= 220-300V
320= 275-350V
375= 300-400V
ELECTRICAL CHARACTERISTICS
I
DRM
I
T
V
TM
V
BO
V
DRM
Co
Pa rt
I
H
Pe a k
-sta te
Curre nt
a t VDRM
o
ff
Continue
on-sta te DC
or RMS
Is
Pe a k On
-sta te
Volta g e
Bre a kove r Volta g e
(Insta nta ne ous Cla mp ing
Volta g e )
Bloc king
Volta g e
Junc tion
Ca p a c -
ita nc e
Numb e r
("X"= A
Or B)
Hold ing
Curre nt
Switc hing
Curre nt
Curre nt
T
I = 1A
µA
A
mA
V
mA
p F
V
V
Min.
27
Ma x.
36
Min.
20
Ma x.
Ma x.
0.1
Min.
150
150
150
Ma x.
5.0
Typ .
250
250
250
Typ .
100
60
SP030X
SP064X
SP100X
SP120X
SP150X
SP220X
2
2
2
58
70
50
0.1
5.0
90
125
75
0.1
5.0
60
120
135
170
190
220
275
300
145
165
225
265
300
350
400
95
2
2
2
2
2
2
2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
150
150
150
150
150
150
150
5.0
5.0
5.0
5.0
5.0
5.0
5.0
250
250
250
250
250
250
250
40
40
30
30
30
30
30
110
140
160
180
220
240
SP240X
SP270X
SP320X
SP345X
Note :"A" se rie s in DO-41 p la stic p a c ka g e , "B" se rie s in DO-15 pla stic pa c ka g e ."C" se rie s in DO-201AD p la stic p a c ka g e .
MAXIMUM RATINGS
I
TSM
d i/d t
Critic a l Ra te of
Rise of On-sta te
Ip p
Pe a k Pulse Curre nt(TJ 150 C)
Amp s
Pe a k One Cyc le Sin
Surg e Curre nt
Amp s
Pa rt
Numb e r
Curre nt A/µA Ma x
10X160µS Ma x. 10X560µS Ma x. 10X1000µS Ma x.
60Hz
20
50Hz
16.7
25
SPXXXA
SPXXXB
SPXXXC
100
150
200
50
50
60
90
100
100
100
100
150
30
60
50
Note s:
1.All me a sure me nts a re a t 60Hz with re sistive loa d a t a mb ie nt te mp e ra ture of+ 25 C unle ss othe rwise sp e c ifie d.
2.Stora ge te mpe ra ture ra ng e (TSTG) is -65 C to + 150 C
3.Junc tion te mp e ra ture ra nge (T ) is -40 C to + 150 C
J
4.Le a d sold e r te mp e ra ture is a ma ximum of the + 230 C for 10 se c onds , 0.375"(9.5mm)le a d le ngth
5.All SP's a re bid ire c tiona l a nd a ll e le c tric a l p a ra me te rs a pp ly to b oth the forwa rd a nd re ve rse pola ritie s
6.All SP's me e t the surge re quire me nts of the following sta nda rd s
10/700
µ
A
A
1.5KV
38A
CCITTK17-20
VDE0433
CENT
5/310
µ
A
10/700
µ
2KV
µ
5/200 A
50A
0.5/700
0.2/310
µ
A
A
1.5KV
38A
µ
QUALITY ASSURANCE
Te st De sc rip tion
Conditions
Comme nts
Re pe a te d 2 time s in the norma l
se q ue nc e of te sting
Ra te d Curre nt
Surg e (Ip p)
V
BO in forwa rd a nd
All de vic e s fully c ha ra c te rize d on volta ge
to e nsure prope r op e ra tion a nd re lia b ility
Bre a kove r Volta g e (VBO
)
re ve rse d ire c tions
Me a sure d for the ra te d
minimum va lue
Me a sure d for the ra te d
minimum va lue
Holding Curre nt(I )
H
Me a sure d with 1 a mp
RMS or DC c urre nt
Me a sure d with 1 a mp
RMS or DC c urre nt
Pe a k On-sta te Volta g e (V )
T
Me a sure d a t 80%
of Ra te d VBO
Me a sure d a t 80%
of Ra te d VBO
Le a ka ge Curre nt(IDRM
)
FIG.1A-Pulse WaveForm (10X1000
µ
s)
µ
FIG.1B-Pulse Wave Form (10X560 s)
tr
tr
TEST WAVEFORM
PARAMETERS
TEST WAVEFORM
PARAMETERS
100
90
100
90
tr= 10
µs
tr= 10
µs
Pe a k Va lue -Ip p
Ha lf Va lue =
Pe a k Va lue -Ip p
IPP
Ha lf Va lue =
td = 1000
µs
td = 560µs
I
PP
2
= td
= td
2
50
50
10x1000 Wa veform
10x560 Wa ve form
10
0
10
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
td
t-Time mSec
td
t-Time mSec
FIG.2-Normalized DC Holding Current vs Case
Temperature
µ
FIG.1C-Pulse WaveForm (10X160 s)
tr
2
1.8
1.6
1.4
TEST WAVEFORM
PARAMETERS
100
90
tr= 10
µs
Pe a k Va lue -Ip p
Ha lf Va lue =
td = 160
µs
I
PP
2
1.2
1
= td
50
10x160 Wa ve form
0.8
0.6
0.4
10
0
0
1
2
3
4
5
6
-40
-20
0
20
40
60
80
100
120
140
160
td
t-Time mSec
Case Temperature(Tc)- C
FIG.3A-V-I Characteristics of Devices with Negative
Resistance
FIG.3B-V-I Characteristics of Devices with Positive
Resistance
+ I
+ I
I
T
V
T
I
T
V
T
V
BO (MAX)
R
S
I
H
I
H
I
S
V
S
V
S
I
S
I
DRM
I
DRM
I
BO
I
BO
-V
0
+ V
-V
0
+ V
V
DRM
V
DRM
V
BO
V
BO
(
V
BO-
V
S)
(
V
I
S-
S-
V
I
BO
BO)
R
S=
R
S=
I
S- BO
I
-I
FIG.4-Normalized VBO Change Junction
Temperature
FIG.5-Normalized Repetitive Peak Off-State
(Leakage)Current Vs Junction Temperature
200
14
12
10
100
V= VDRM
8
6
4
20
10
2
0
-2
-4
-6
2
-8
-40
-20
0
20
40
60
80
100
120
140
160
1
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Junction Temperature(T
J
)- C
J
Junction Temperature(T )- C
FIG.6-Peak On-State Voltage Vs Peak On-State
Current
120
100
Tc = 25 C
80
60
50&75 Amp
De vic e s
40
20
0
0
1
2
3
4
5
6
T
Peak Instantaneous On-state Voltage (V )-Volts
FIG.7-Peak Surge On-State Current Vs Surge Current Duration
100
SUPPLY FREQUENCY:60Hz Sinusoid a l
LOAD: Re sistive
RMS ON-STATE CURRENT (IT(RMS))Ma x
Ra ted Va lue a t Spe c ifie d Ca se Te mp era ture
NOTE: Ove rloa d ma y not b e re pe a te d
until Junction Te mpe ra ture ha s
re turne d to Stea d y-Sta te ra te d
va lue
20
SPXXXB
10
SPXXXA
2
1
1
2
10
20
100
200
1000
Surge Duration-full cycles
APPLICATIONS NOTES:
1.HOW TO CHOICE A SIDAC PROTECTOR
When selecting a SIDAC PROTECTOR, The following criteria should be used:
(1)Off-state voltage(VDRM
)
The VDRM of the SP must be greater than maximum operating voltage of circuit that SP is protecting.
For example: a POTS (Plain Old Telephone Service) application, convert the maximum operating
ring(150VEMS)to a peak voltage and add the maximum DC bias of the central office battery,
VDRM > 268.8V
(2)Switching voltage(Vs)
The Vs of the SP should be equal to or less than the instantaneous peak voltage rating of the component
it protecting.
S relay breakdown
For example: V V
(3)Peak Pulse Current (IPP
)
For circuits that do not require additional series the surge current rating(IPP)of the SP should be greater
than or equal to the surge current associated with the lightning tests of the applicable Regulatory
requirement(IPK
)
PP PK
I I
For circuits that utilize additional series resistance , the surge current ratings(IPP)of the SP
should be greater than or equal to the available surge currents associated with the lightning immunity
tests of the applicable Regulatory requirement(IPK(available)
)
PP PK (available)
I I
The maximum available surge current is calculated by dividing the peak surge voltage(VPK)by the total
circuit impedance(RTOTAL
)
I
PK(available)= VPK/RTOTAL
For longitudial surges(TIP-GND,RING-GND), RTOTAL is calculated for both TIP and RING
source= VPK/IPK
TOTAL= RTIP+ Rsource
TOTAL= RRING+ Rsource
R
R
R
For metallic surges(TIP-RING):
R
source= VPK/IPK
TOTAL= RTIP+ Rsource+ RRING
For example 1: the type A surge requirement of bellcore 1089 with 30
PK= 100A, 10X1000
For example 2: The surge requirement of bellcore 1089 with 30
PK= 100A, 10X1000
PK= 1000V
R
Ω
Ω
on Tip and 30 on ring,
I
µ
S
Ω
Ω
on Tip and 30 on ring,
I
µ
S
V
Rsource= Vpk/Ipk= 10
TOTAL= RTIP+ Rsource= 40
PK(available)= VPK/RTOTAL= 1000V/40 = 25A
PP> 25A
R
I
I
4.Holding Current(I )
H
Because FCC Part 68.306.A.8.iii specifies that registered terminal equipment not exceed 140mA of DC current per conductor
under short circuit conditions. The holding current of the SP is set at 150mA.
For special design criteria , The holding current (IH) of the SP must be greater than the DC current that can be supplied during
an operational and short circuit condition.
5.Off-state Capacitance(Co)
Assuming that the criteria point of insertion loss is 70% of the original signal level value, The SP can be used in most applications
with transmission speeds of up 30MHz. If transmission speeds greater than 30MHz, a compensation circuit may be required.
2.The response speed comparison between Gas Discharge Tubes(GDTs), MOV's TVS diodes and
SIDAC PROTECTOR (SP)
The axial represents the dv/dt(rise in voltage with respect to time) applied to each protector, and the Y axial represents the
maximum voltage drop across each protector (A norminal stand-off voltage ratings of 230V is supposed)
1000
900
230 d e vic e s
800
700
600
Ga s Disc ha rg e Tub e
MOV
500
400
Ava la nc he Diod e
SIDAC PROTECTOR
300
200
0.001
0.01
0.1
1
10
100
1000
dv/dt-Voltage/mSec
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