SSF1090A [GOOD-ARK]
Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3/2;
| 型号： | SSF1090A |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3/2 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：1169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1090A
100V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
100V
72mΩ(typ)
15A
①
MarkingandPin
Assignment
SchematicDiagram
D2PAK
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
175℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.
Absolute Max Rating
Symbol
Parameter
Max.
15
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V ①
Continuous Drain Current, VGS @ 10V ①
Pulsed Drain Current ②
A
10
60
Power Dissipation ③
41.7
0.28
100
W
W/°C
V
PD @TC = 25°C
Linear Derating Factor
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
± 20
135
V
EAS
Single Pulse Avalanche Energy @ L=30mH
Avalanche Current @ L=30mH
Operating Junction and Storage Temperature Range
mJ
A
IAS
3
TJ TSTG
-55 to + 175
°C
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Page 1 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
3.6
60
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case ③
Junction-to-Ambient (t ≤ 10s)④
—
RθJA
Junction-to-Ambient (PCB mounted, steady-state) ④
—
42
Electrical Characteristics@TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
100
Typ.
—
Max.
—
90
—
4
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 2A
TJ = 125℃
—
—
2
72
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
mΩ
V
122.3
—
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
2.76
—
—
1
VDS = 30V, VGS =0V
TJ = 125℃
Drain-to-Source leakage current
μA
A
—
50
100
—
—
—
—
—
—
—
—
—
—
—
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
—
VGS =20V
IGSS
—
VGS = -20V
Qg
20.5
4.6
8.4
12.2
36.5
52.3
31.4
720
72
ID = 9.2A
VDD=80V
VGS = 10V
nC
ns
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
V
GS=10V, VDD=50V,
RL=5.4Ω,
GEN=18Ω
Rise time
R
td(off)
tf
Turn-Off delay time
ID=9.2A
Fall time
Ciss
Coss
Crss
Input capacitance
VGS = 0V
VDS = 25V
ƒ = 1MHz
pF
Output capacitance
Reverse transfer capacitance
49
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symb
showing the
IS
—
—
15 ①
A
integral reverse
Pulsed Source Current
(Body Diode)
ISM
—
—
60
A
p-n junction diode.
IS=3A, VGS=0V,TJ= 25°C
TJ = 25°C, IF =9.2A, di/dt =
100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.85
35.1
68.6
1.5
—
V
ns
nC
Qrr
—
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Page 2 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Mechanical Data
D2PAK PACKAGE OUTLINE DIMENSION
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Max
10.280
1.320
9.400
1.400
0.950
Min
Max
0.405
0.052
0.370
0.055
0.037
A
B
C
D1
D2
D3
E
F
G
H
9.660
1.020
8.590
1.140
0.700
0.380
0.040
0.338
0.045
0.028
5.080 (TYP)
0.200 (TYP)
15.090
1.150
4.300
2.290
15.390
1.400
4.700
2.790
0.594
0.045
0.169
0.090
0.606
0.055
0.185
0.110
0.250 (TYP)
0.010 (TYP)
I
K
a1
a2
1.300
0.450
00
1.600
0.650
80
0.051
0.018
10
0.063
0.026
80
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Page 6 of 7
Rev.1.0
SSF1090A
100V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1090A
Package (Available)
D2PAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Units/Inner Inner
Units/Carton
Type
Tube
Box
Box
Boxes/Carton Box
Box
D2PAK
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 175℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ or 175℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.0
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