SSF1526 [GOOD-ARK]
150V N-Channel MOSFET;
| 型号： | SSF1526 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 150V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1526
150V N-Channel MOSFET
Main Product Characteristics
VDSS 150V
RDS(on) 22mohm(typ.)
ID 65A
MarkingandPin
Assignment
TO-220
SchematicDiagram
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
175℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Max.
Units
65
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
45
260
272
W
W/°C
V
Power Dissipation③
PD @TC = 25°C
Linear Derating Factor
2
VDS
Drain-Source Voltage
150
VGS
Gate-to-Source Voltage
±30
V
EAS
1.3
mJ
A
Single Pulse Avalanche Energy @ L=0.72mH②
Avalanche Current @ L=0.72mH②
Operating Junction and Storage Temperature Range
IAS
1.9
TJ TSTG
-55 to + 175
°C
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Page 1 of 7
Rev.1.1
SSF1530
150V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
0.55
62
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case③
—
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
RθJA
—
40
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
150
—
Typ.
—
Max.
—
26
—
4
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 36A
TJ = 125℃
22
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
mΩ
V
—
51.4
—
2
VDS = VGS, ID = 250μA
TJ = 125℃
—
2.2
—
—
1
—
VDS = 150V,VGS = 0V
TJ = 125°C
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
—
50
100
—
—
—
—
—
—
VGS =30V
IGSS
-100
—
—
VGS = -30V
Qg
Total gate charge
ID = 36A,
227.3
43.0
78.8
nC
ns
VDS=120V,
Qgs
Qgd
Gate-to-Source charge
Gate-to-Drain("Miller") charge
—
VGS = 10V
—
td(on)
Turn-on delay time
—
—
27.0
VGS=10V, VDS=75V,
RL=2.1Ω,
tr
Rise time
—
—
—
—
—
—
—
—
—
—
—
—
65.8
118.7
78.1
11529
334
RGEN=2.5Ω，
ID = 36A
td(off)
tf
Turn-Off delay time
Fall time
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 0V
pF
VDS = 25V
ƒ = 800KHz
321
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symb
showing the
IS
—
—
65
A
integral reverse
p-n junction diode.
IS=36A, VGS=0V
Pulsed Source Current
(Body Diode)
ISM
—
—
260
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
—
—
0.84
87.6
1.3
—
V
ns
TJ = 25°C, IF =26A, di/dt =
100A/μs
Qrr
Reverse Recovery Charge
—
—
nC
401.5
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Page 2 of 7
Rev.1.1
SSF1530
150V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.1.1
SSF1530
150V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.1
SSF1530
150V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.1
SSF1530
150V N-Channel MOSFET
Mechanical Data
TO -220 PACKAGE OUTLINE DIMENSION_GN
E
A
ФP
ϴ1
D
D2
ФP1
ϴ
ϴ
2
D1
b1
b
ϴ4
A1
L
c
E
e
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Nom
1.300
Max
Min
Nom
0.051
0.094
0.050
0.054
0.020
0.614
1.130
0.360
0.394
0.400
0.142
0.059
0.1BSC
0.516
Max
A
A1
b
b1
c
-
-
-
-
2.200
2.400
2.600
0.087
0.102
-
1.270
1.370
-
-
-
1.270
1.470
0.050
0.058
-
0.500
-
-
-
D
-
-
15.600
28.700
9.150
-
-
-
-
-
-
D1
D2
E
E1
ФP
ФP1
e
-
-
-
-
9.900
10.000
10.160
3.600
1.500
2.54BSC
10.100
0.390
0.398
-
-
-
-
-
-
-
-
12.900
13.100
13.300
0.508
0.524
L
ϴ
70
70
30
30
70
70
70
30
-
-
-
-
-
-
-
-
-
-
1
-
-
2
ϴ
50
10
90
50
3
ϴ
ϴ4
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Page 6 of 7
Rev.1.1
SSF1530
150V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1526
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Inner
Package
Tubes/Inner
Units/Inner
Box
Units/Carton
Units/Tube
Boxes/Carton
Type
Box
Box
Box
6
TO-220
50
20
1000
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Tj=125℃ to 175℃ @ 80%
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
Bias(HTRB)
High
of Max VDSS/VCES/VR
Tj=150℃ or 175℃ @ 100%
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
of Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.1
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