SSF2429 [GOOD-ARK]
20V P-Channel MOSFET;
| 型号： | SSF2429 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2429
20V P-Channel MOSFET
DESCRIPTION
The SSF2429 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
D
G
GENERAL FEATURES
● VDS = -20V,ID =-5A
S
Schematic Diagram
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 48mΩ @ VGS=-2.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOT23-6 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
3000 units
2429
SSF2429
SOT23-6
Ø180mm
8mm
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±12
-5
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
-20
A
IDM
Maximum Power Dissipation
1.4
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃/W
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Page 1 of 4
Rev.1.0
SSF2429
20V P-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VDS=-20V,VGS=0V
VGS=±12V,VDS=0V
-1
μA
nA
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-3A
VDS=-10V,ID=-3A
-0.5
4
-0.7
29
-1
35
48
V
mΩ
mΩ
S
Drain-Source On-State Resistance
37
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
1450
200
PF
PF
PF
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
160
td(on)
tr
td(off)
tf
5
13
80
35
17
4
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD=-10V,ID=-1A
VGS=-4.5V,RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=-10V,ID=-4.5A,
Gate-Source Charge
VGS=-5V
Gate-Drain Charge
4.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1.3A
-1.3
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 4
Rev.1.0
SSF2429
20V P-Channel MOSFET
ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
tr
toff
tf
td(on)
td(off)
Rl
Vin
90%
90%
D
Vout
VOUT
INVERTED
Vgs
10%
90%
Rgen
10%
50%
G
VIN
50%
S
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF2429
20V P-Channel MOSFET
SOT23-6 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0
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