SSF3324 [GOOD-ARK]
30V N-Channel MOSFET;
| 型号： | SSF3324 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：1331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3324
30V N-Channel MOSFET
Main Product Characteristics
VDSS 30V
RDS(on) 26.5mohm(typ.)
ID 5.8A
①
MarkingandPin
Assignment
SOT23
SchematicDiagram
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Max.
5.8 ①
4.2 ①
23
Units
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
A
PD @TC = 25°C
VDS
Power Dissipation
1.4
W
V
Drain-Source Voltage
30
VGS
Gate-to-Source Voltage
± 12
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 150
°C
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Page 1 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJA
Junction-to-ambient (t ≤ 10s) ③
—
90
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
30
—
—
—
—
—
—
0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 2A
TJ = 125℃
26.5
43.7
31.1
50.2
44.9
62.1
—
35
—
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Static Drain-to-Source on-resistance
Static Drain-to-Source on-resistance
Gate threshold voltage
mΩ
mΩ
mΩ
V
40
—
VGS=2.5V,ID=1.5A
TJ = 125℃
50
—
VGS=1.8V,ID=1A
TJ = 125℃
1.4
—
VDS = VGS, ID = 250μA
TJ = 125℃
0.63
—
1
VDS = 24V,VGS = 0V
TJ = 125°C
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =12V
IGSS
—
VGS = -12V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
ID = 5.8A,
10
2
nC
ns
VDS=15V,
Qgs
Qgd
td(on)
tr
—
VGS = 4.5V
—
3
—
3
—
VGS=10V, VDS =15V,
5
RGEN=3Ω，
td(off)
tf
Turn-Off delay time
Fall time
—
26
4
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V,
VDS =15V,
ƒ = 1MHz
1245
85
70
pF
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
IS
—
—
5.8 ①
A
integral reverse
p-n junction diode.
IS=1A, VGS=0V
Pulsed Source Current
(Body Diode)
ISM
VSD
—
—
—
23
A
V
Diode Forward Voltage
0.72
1.2
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Page 2 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3. Gate to source cut-off voltage
Figure 4: Drain-to-Source Breakdown Voltage vs.
Temperature
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Page 4 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Normalized On-Resistance Vs. Case
Temperature
Figure 6. Maximum Drain Current Vs. Case
Temperature
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Figure8. Normalized Maximum Transient Thermal Impedance
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Page 6 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Mechanical Data
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Page 7 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Ordering and Marking Information
Device Marking: 3324
Package (Available)
SOT23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner Units/Inner Inner
Type Tube Box Box
Units/Carton
Boxes/Carton Box
Box
SOT23 3000
10
30000
4
120000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃@ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
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Page 8 of 8
Rev.1.1
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