SSF3420 [GOOD-ARK]
30V N-Channel MOSFET;
| 型号： | SSF3420 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：709K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3420
30V N-Channel MOSFET
D
DESCRIPTION
The SSF3420 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic Diagram
GENERAL FEATURES
● VDS = 30V,ID =6.3A
R
DS(ON) < 33mΩ @ VGS=4.5V
RDS(ON) < 25mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOT23-6 Top View
Tape Width
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Quantity
3000 units
3420
SSF3420
SOT23-6
Ø180mm
8mm
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
V
±20
VGS
ID（25℃）
ID（70℃）
6.3
A
4.8
Drain Current-Continuous@ Current-Pulsed (Note 1)
20
A
IDM
PD
Maximum Power Dissipation
1.6
W
℃
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
℃/W
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
78
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Page 1 of 6
Rev.2.0
SSF3420
30V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VDS=24V,VGS=0V
VGS=±20V,VDS=0V
1
μA
nA
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=5.5A
1
1.9
26
20
10
3
V
33
25
mΩ
mΩ
S
Drain-Source On-State Resistance
V
GS=10V, ID=6.3A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
VDS=10V,ID=6.3A
Clss
Coss
Crss
600
150
70
PF
PF
PF
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
8
4
nS
nS
nS
nS
nC
nC
nC
nS
nC
Turn-on Rise Time
VDS=15V,VGS=10V,RGEN=6Ω
ID=1A
Turn-Off Delay Time
22
4
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
Trr
10
2
VDS=15V,ID=6.3A,VGS=10V
IF=6.3A, dI/dt=100A/µs
VGS=0V,IS=1.3A
Gate-Source Charge
Gate-Drain Charge
2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
18
9
Qrr
VSD
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.2.0
SSF3420
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
ton
tr
toff
tf
td(on)
VOUT
VIN
td(off)
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
10%
50%
G
S
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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Page 3 of 6
Rev.2.0
SSF3420
30V N-Channel MOSFET
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
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Page 4 of 6
Rev.2.0
SSF3420
30V N-Channel MOSFET
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.2.0
SSF3420
30V N-Channel MOSFET
SOT23-6 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 6
Rev.2.0
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