SSF3626 [GOOD-ARK]
30V Dual N-Channel MOSFET;
| 型号： | SSF3626 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V Dual N-Channel MOSFET |
| 文件： | 总4页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3626
30V Dual N-Channel MOSFET
DESCRIPTION
The SSF3626 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Schematic Diagram
GENERAL FEATURES
● VDS = 30V,ID =6.9A
R
DS(ON) < 51mΩ @ VGS=4.5V
RDS(ON) < 35mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSF3626
SSF3626
SOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VDS
±20
6.9
VGS
ID(25℃)
ID(70℃)
IDM
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
5.5
A
30
A
Maximum Power Dissipation
2.8
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
℃/W
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Symbol
Condition
Min Typ Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
V
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Page 1 of 4
Rev.1.0
SSF3626
30V Dual N-Channel MOSFET
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
1
μA
nA
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=4.9A
1.5
3
V
41
25
5
51
35
mΩ
mΩ
S
Drain-Source On-State Resistance
VGS=10V, ID=5.9A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
VDS=10V,ID=5.9A
Clss
Coss
Crss
550
100
50
PF
PF
PF
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
5
nS
nS
nS
nS
nC
nC
nC
nS
nC
Turn-on Rise Time
25
12
10
9
V
DS=15V,VGS=10V,RGEN=3..2Ω
ID=4.7A
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
Trr
V
DS=15V,ID=5.9A,VGS=10V
IF=4.7A, dI/dt=100A/µs
VGS=0V,IS=4.7A
Gate-Source Charge
1.8
1.7
20
12
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Qrr
VSD
1
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF3626
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
tr
toff
tf
td(on)
VOUT
VIN
td(off)
Rl
Vin
D
Vout
90%
90%
Vgs
Rgen
INVERTED
G
10%
90%
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF3626
30V Dual N-Channel MOSFET
SOP-8 PACKAGE INFORMATION
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0
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