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SSF6014 [GOOD-ARK]

60V N-Channel MOSFET;
SSF6014
型号： SSF6014
厂家： GOOD-ARK ELECTRONICS    GOOD-ARK ELECTRONICS
描述：

60V N-Channel MOSFET
文件： 总5页 (文件大小：1045K)
中文：  中文翻译
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SSF6014  
60V N-Channel MOSFET  
FEATURES  
ID =60A  
BV=60V  
Advanced trench process technology  
avalanche energy, 100% test  
R DS (ON)=14mΩ（max.）  
Fully characterized avalanche voltage and current  
Lead free product  
DESCRIPTION  
The SSF6014 is a new generation of middle voltage and high  
current N–Channel enhancement mode trench power  
MOSFET. This new technology increases the device reliability  
and electrical parameter repeatability. SSF6014 is assembled  
in high reliability and qualified assembly house.  
APPLICATIONS  
Power switching application  
SSF6014 Top View (TO-220)  
Absolute Maximum Ratings  
Parameter  
Max.  
60  
Units  
ID@Tc=25ْC Continuous drain current,VGS@10V  
ID@Tc=100Cْ Continuous drain current,VGS@10V  
A
42  
IDM  
Pulsed drain current  
Power dissipation  
①
240  
115  
0.74  
±20  
235  
TBD  
W
W/ْC  
V
PD@TC=25ْC  
Linear derating factor  
VGS  
EAS  
EAR  
TJ  
Gate-to-Source voltage  
Single pulse avalanche energy  
Repetitive avalanche energy  
Operating Junction and  
②
mJ  
–55 to +175  
Cْ  
TSTG  
Storage Temperature Range  
Thermal Resistance  
Parameter  
Junction-to-case  
Junction-to-ambient  
Min.  
—
Typ.  
1.31  
—
Max.  
—
Units  
RθJC  
RθJA  
Cْ /W  
—
62  
Electrical Characteristics @T J=25 Cْ (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
BVDSS Drain-to-Source breakdown voltage  
RDS(on) Static Drain-to-Source on-resistance  
VGS(th) Gate threshold voltage  
60  
—
—
—
14  
4.0  
—
2
V
mΩ  
V
VGS=0V,ID=250μA  
VGS=10V,ID=30A  
12  
2.0  
—
VDS=VGS,ID=250μA  
VDS=5V,ID=30A  
VDS=60V,VGS=0V  
VDS=60V,  
gfs Forward transconductance  
60  
—
S
—
IDSS Drain-to-Source leakage current  
IGSS Gate-to-Source forward leakage  
www.goodark.com  
μA  
nA  
—
—
—
—
10  
VGS=0V,TJ=150ْC  
VGS=20V  
100  
Page 1 of 5  
Rev.2.3  
SSF6014  
60V N-Channel MOSFET  
Gate-to-Source reverse leakage  
Qg Total gate charge  
—
—
—
—
—
—
—
—
—
—
—
—
45  
-100  
—
—
—
—
—
—
—
—
—
—
VGS=-20V  
ID=30A  
nC  
nS  
pF  
VDD=30V  
VGS=10V  
Qgs Gate-to-Source charge  
Qgd Gate-to-Drain("Miller") charge  
td(on) Turn-on delay time  
4
15  
14.6  
14.2  
40  
VDD=30V  
ID=2A ,RL=15Ω  
RG=2.5Ω  
tr  
td(off) Turn-Off delay time  
tf Fall time  
Rise time  
VGS=10V  
7.3  
1480  
190  
135  
Ciss Input capacitance  
VGS=0V  
VDS=25V  
f=1.0MHZ  
Coss Output capacitance  
Crss Reverse transfer capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min.  
Typ.  
Max.  
Units  
Test Conditions  
MOSFET symbol  
IS  
—
—
—
60  
showing the  
integral reverse  
p-n junction diode.  
A
Pulsed  
Source  
Current  
ISM  
—
240  
(Body Diode)  
①
VSD Diode Forward Voltage  
trr Reverse Recovery Time  
—
—
—
—
33  
61  
1.3  
—
V
TJ=25ْC,IS=40A,VGS=0V ③  
nS  
nC  
TJ=25ْC,IF=60A  
di/dt=100A/μs ③  
Qrr Reverse Recovery Charge  
ton Forward Turn-on Time  
—
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)  
Notes:  
① Repetitive rating; pulse width limited by max junction temperature.  
② Test condition: L =0.3mH, VDD = 30V,Id=37A  
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.  
EAS test circuit  
Gate charge test circuit  
www.goodark.com  
Page 2 of 5  
Rev.2.3  
SSF6014  
60V N-Channel MOSFET  
Switch Time Test Circuit  
Switch Waveforms  
Transfer Characteristic  
Capacitance  
On Resistance vs. Junction Temperature  
Breakdown Voltage vs. Junction Temperature  
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Page 3 of 5  
Rev.2.3  
SSF6014  
60V N-Channel MOSFET  
Gate Charge  
Source-Drain Diode Forward Voltage  
Safe Operation Area  
Max Drain Current vs. Junction Temperature  
Transient Thermal Impedance Curve  
Page 4 of 5  
www.goodark.com  
Rev.2.3  
SSF6014  
60V N-Channel MOSFET  
MECHANICAL DATA  
TO-220 PACKAGE OUTLINE DIMENSION_GN  
E
A
ФP  
ϴ
1
D
D2  
ФP1  
ϴ
ϴ2  
D1  
b1  
b
ϴ4  
A1  
L
c
E
e
Dimension In Millimeters  
Dimension In Inches  
Symbol  
Min  
Nom  
1.300  
Max  
Min  
Nom  
0.051  
0.094  
0.050  
0.054  
0.020  
0.614  
1.130  
0.360  
0.394  
0.400  
0.142  
0.059  
0.1BSC  
0.516  
Max  
A
A1  
b
b1  
c
-
-
-
-
2.200  
2.400  
2.600  
0.087  
0.102  
-
1.270  
-
-
-
1.270  
1.370  
1.470  
0.050  
0.058  
-
-
-
-
0.500  
-
-
-
-
-
-
-
-
-
-
-
-
D
15.600  
28.700  
9.150  
D1  
D2  
E
E1  
ФP  
ФP1  
e
9.900  
10.000  
10.160  
3.600  
10.100  
0.390  
0.398  
-
-
-
-
-
-
-
-
1.500  
2.54BSC  
12.900  
13.100  
13.300  
0.508  
0.524  
L
70  
70  
30  
30  
70  
70  
70  
30  
-
-
-
-
-
-
-
-
-
-
ϴ1  
ϴ2  
-
-
50  
10  
90  
50  
3
ϴ
4
ϴ
www.goodark.com  
Page 5 of 5  
Rev.2.3  

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