SSF7N65F_15 [GOOD-ARK]
650V N-Channel MOSFET;
| 型号： | SSF7N65F_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 650V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF7N65F
650V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
650V
1.26Ω (typ.)
7A
MarkingandPin
SchematicDiagram
Assignment
TO220F
Features and Benefits
AdvancedProcessTechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
These N-Channel enhancement mode power field effect transistors are produced using
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
Parameter
Max.
7 ①
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
A
4.4 ①
28
Power Dissipation ③
52
W
W/°C
V
PD @TC = 25°C
Linear Derating Factor
0.42
VDS
Drain-Source Voltage
650
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=10mH
Avalanche Current @ L=10mH
Operating Junction and Storage Temperature Range
353
mJ
A
IAS
8.4
TJ TSTG
-55 to +150
°C
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Page 1 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
2.4
62
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case ③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
—
RθJA
—
40
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
650
—
—
2
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID =3.5A
TJ = 125℃
1.26
2.85
—
1.4
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
Ω
V
4
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
—
—
1
VDS = 650V,VGS = 0V
TJ = 125℃
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =30V
IGSS
—
VGS = -30V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
31.3
6.4
ID = 7A,
nC
nS
pF
VDS=300V,
Qgs
Qgd
td(on)
tr
—
VGS = 10V
11.3
15.7
25.6
92.9
39.2
1232
102
7.0
—
—
VGS=10V, VDS =300V,
—
RL=43Ω, RGEN=25Ω
ID =7A
td(off)
tf
Turn-Off delay time
Fall time
—
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
VDS = 25V
ƒ = 1MHz
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
7
A
integral reverse
p-n junction diode.
IS=7A, VGS=0V
Pulsed Source Current
(Body Diode)
ISM
—
—
28
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.86
665
1.4
—
V
nS
nC
TJ = 25°C, IF =7A,
di/dt = 100A/μs
Qrr
4096
—
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Page 2 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
ra
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Mechanical Data
TO220F PACKAGE OUTLINE DIMENSION_GN
Dimension In Millimeters
Nom
Dimension In Inches
Nom
Symbol
Min
Max
10.360
10.240
7.200
4.800
2.640
2.860
0.800
-
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
-
E
E1
E2
A
9.960
9.840
6.800
4.600
2.440
2.660
0.600
-
10.160
10.040
7.000
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
4.700
A1
A2
A3
c
2.540
2.760
0.700
0.500
D
15.780
8.970
6.500
15.870
9.170
15.980
9.370
6.800
0.621
0.353
0.256
0.629
0.369
0.268
D1
H1
e
6.700
2.54BSC
ФP
3.080
1.400
0.900
3.180
1.500
1.000
3.280
1.600
1.100
0.121
0.055
0.035
0.125
0.059
0.039
0.129
0.063
0.043
ФP1
ФP2
ФP3
0.100
12.780
2.970
0.830
0.200
12.980
3.170
0.930
0.300
13.180
3.370
1.030
0.004
0.503
0.117
0.033
0.008
0.511
0.125
0.037
0.012
0.519
0.133
0.041
L
L1
L2
Q 1
3o
5o
7o
3o
5o
7o
43o
1.180
0.760
-
45o
1.280
0.800
-
47o
43o
0.046
0.030
-
45o
0.050
0.031
-
47o
Q 2
b1
b2
b3
1.380
0.840
1.420
0.054
0.033
0.056
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Page 6 of 7
Rev.1.2
SSF7N65F
650V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7N65F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Units/Inner Inner
Units/Carton
Type
Tube Box
Box
Boxes/Carton Box
Box
TO220F
50
20
1000
6
6000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
V
DSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ @ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.2
相关型号：
SSF7N80A
Power Field-Effect Transistor, 5A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
SAMSUNG
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