SSFP20N20 [GOOD-ARK]
StarMOST Power MOSFET; StarMOST功率MOSFET
| 型号： | SSFP20N20 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | StarMOST Power MOSFET |
| 文件： | 总2页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSFP20N20
StarMOST Power MOSFET
■
■
Extremely high dv/dt capability
Low Gate Charge Qg results in
Simple Drive Requirement
VDSS = 200V
ID25 = 20A
■ 100% avalanche tested
■ Gate charge minimized
RDS(ON) = 0.18Ω
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Pin1–Gate
Pin2–Drain
Pin1–Source
Application
■ Switching application
Absolute Maximum Ratings
Parameter
Max.
20
Units
A
ID@Tc=25ْC
ID@Tc=100ْC Continuous Drain Current,VGS@10V
Pulsed Drain Current ①
Continuous Drain Current,VGS@10V
12
IDM
80
PD@TC=25ْC Power Dissipation
150
1.2
±20
510
20
W
W/ْC
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy ②
Avalanche Current ①
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy ①
Peak Diode Recovery dv/dt ③
Operating Junction and
15
mJ
V/ns
5.0
–55 to +150
TSTG
Storage Temperature Range
Cْ
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
300(1.6mm from case)
10 Ibf
●
in(1.1N m)
●
Thermal Resistance
Parameter
Junction-to-case
Min.
—
Typ.
—
Max.
Units
RθJC
RθCS
RθJA
0.83
—
Cْ /W
Case-to-Sink,Flat,Greased Surface
Junction-to-Ambient
—
0.24
—
—
40
1
SSFP20N20
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VGS=0V,ID=250μA
V(BR)DSS
△V(BR)DSS/△TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp.Coefficient
200 —
—
—
V
—
0.29
V/ْC
Reference to 25ْC,ID=1mA
Static Drain-to-Source On-resistance —
—
0.18 Ω VGS=10V,ID=12A ④
VGS(th)
Gate Threshold Voltage
2.0 —
6.9 —
4.0
—
V
S
VDS=VGS,ID=250μA
VDS=40V,ID=12A
VDS=200V,VGS=0V
VDS=160V,VGS=0V,TJ=150ْC
VGS=20V
gfs
Forward Transconductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
14
51
45
36
25
IDSS
IGSS
Drain-to-Source Leakage current
μA
250
100
-100
70
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
nA
VGS=-20V
Qg
ID=18A
VDS=160V
nC
nS
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on Delay Time
13
VGS=10V
39
—
VDD=100V
ID=18A
—
Rise Time
RG=9.1Ω
RD=5.4Ω
—
td(off)
tf
Turn-Off Delay Time
Fall Time
—
Between lead,
6mm(0.25in.)
LD
Internal Drain Inductance
Internal Source Inductance
—
—
5.0
13
—
—
nH from package
and center of
die contact
LS
Ciss
Coss
Crss
Input Capacitance
—
—
—
1300 —
VGS=0V
VDS=25V
pF
Output Capacitance
400
130
—
—
f=1.0MHZ
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current .
(Body Diode)
Min.
Typ.
Max.
20
Units
Test Conditions
MOSFET symbol
showing the
IS
—
—
A
integral reverse
p-n junction diode.
Pulsed Source Current
.
ISM
—
—
80
(Body Diode) ①
VSD Diode Forward Voltage
—
—
—
—
300
3.4
2.0
610
7.1
V
TJ=25ْC,IS=20A,VGS=0V ④
trr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
nS TJ=25ْC,IF=18A
di/dt=100A/μs ④
μC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
②L = 1.9mH, IAS = 20 A, VDD = 50V,
RG = 25Ω, Starting TJ = 25°C
③ ISD≤18A,di/dt≤150A/μS,VDD≤V(BR)DSS,
TJ≤25ْC
④ Pulse width≤300μS; duty cycle≤2%
2
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