W08M [GOOD-ARK]
SINGLE-PHASE SILICON BRIDGE; 单相硅桥
| 型号： | W08M |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | SINGLE-PHASE SILICON BRIDGE |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
W005M THRU W10M
SINGLE-PHAS
E SILICON BRIDGE
Reverse Voltage -
Forward Current -
50 to 1000 Volts
1.5 Amperes
Features
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Mounting Position: Any
DIMENSIONS
inches
mm
DIM
Note
Max.
Min.
0.300
0.180
1.20
Max.
0.340
0.220
-
Min.
7.6
A
B
C
D
E
F
8.6
5.6
-
4.6
30.5
32.3
4.6
1.27
-
-
0.180
0.028
0.220
0.032
5.6
0.81
0.71
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols W005M W01M
W02M
W04M
W06M
W08M
W10M
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
RMS
Maximum DC blocking voltage
V
100
1000
DC
Maximum average forward rectified current
T =25
I(AV)
1.5
Amps
A
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated load
I
50.0
5.0
Amps
A2t
FSM
12t Rating for fusing (t<8.35ms)
I2t
Maximum forward voltage drop
per element at 1.0A peak
VF
1.0
Volt
Maximum DC reverse current at rated
DC blocking voltage per element
T =25
10.0
1.0
A
mA
TA=100
I
R
A
Operating temperature range
Storage temperature range
T
-55 to +125
-55 to +150
J
T
STG
1
RATINGS AND CHARACTERISTIC CURVES
2
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