TECS110 [GPSEMI]
SINGLE SCR MODULES;
| 型号： | TECS110 |
| 厂家： | 
GREEN POWER SOLUTIONS SRL |
| 描述： | SINGLE SCR MODULES |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Green Power Solutions Srl
Web: www.gpsemi.it e-mail: info@gpsemi.it
http://gpsemi.it/pdf/TECS110,_149.pdf
TECS110, _129, _149
SINGLE SCR MODULES
Preliminary Data Sheet
► Extremely high power density
► Line voltage range up to 1200 VRMS
► High reliability
► Modularity
► User friendly assembly and maintenance
► Cost effective solution
► Suitable for heavy duty applications
Des
cription
Maximum Ratings
Part number
Conditions
Units
TECS110 TECS129 TECS149
Parameters------------------
180° cond, half sine
Ta = 40 °C
Air velocity = 7.5 m/s
A
A
1100
1727
27
1290
2025
38
1490
2339
44
IT(AV)
IT(RMS)
ITSM
50 Hz, Tj = Tjmax,
VR = 0 V
60 Hz, Tj = Tjmax,
VR = 0 V
50 Hz, Tj = Tjmax,
VR = 0 V
60 Hz, Tj = Tjmax,
VR = 0 V
kA
kA
kA²s
kA²s
V
28.5
3645
3317
4400
125
40.1
7220
6570
2800
125
46.4
9680
8809
1800
125
ITSM
I²t
I²t
Tj = Tjmax
VDRM/VRRM
Tjmax
°C
Document TECS110, _129, _149 T001
TECS110, _129, _149
VDRM VRRM
max repetitive reverse
and off-state blocking
voltage
IDRM IRRM
@ Tjmax
VL(RMS)
maximum suggested
RMS line voltage
V
code
Part Number
TECS149
[V]
[mA]
[V]
1200
1600
1800
2200
2800
3400
4400
200
200
200
200
200
200
200
400
500
550
690
800
900
1200
12
16
18
22
28
34
44
TECS129
TECS110
On-State Characteristics
Parameters
TECS110 TECS129 TECS149
Conditions
Tj = Tjmax
Tj = Tjmax
Tj = 25°C
Tj = 25°C
TA = 40°C
Units
Threshold voltage
VT(TO)
1.05
0.25
300
0.85
0.20
300
0.85
0.12
300
V
On-state slope
resistance
r
T
mW
mA
mA
W
Holding current, max
IH
IL
Latching current, typ
Max power losses
1500
1930
1500
1930
1500
1930
PMAX
Triggering Characteristics
Parameters
TECS110 TECS129 TECS149
Conditions
Units
V
VGT
IGT
Gate trigger voltage
Gate trigger current
3
150
10
2
2.5
190
10
2
3
300
10
2
Tj = 25°C, VD = 5V
Tj = 25°C, VD = 5V
Pulse width 1 ms
mA
W
Peak gate power
dissipation
Average gate power
dissipation
PGM
PG(AV)
IFGM
VFGM
VRGM
W
Peak gate current
3
3
3
A
Peak gate voltage
(forward)
Peak gate voltage
(reverse)
20
5
20
5
20
5
V
V
Switching Characteristics
Parameters
TECS110 TECS129 TECS149
Conditions
Tj = Tjmax
Tj = Tjmax
Units
A/µs
V/µs
Critical rate of rise of
di/dt
200
200
200
on-state current
Critical rate of rise of
off-state voltage
dV/dt
1000
1000
1000
Tj=Tjmax, IT=1000A
di/dt=-20A/µs
VR=50V
tq
Turn-off time, typ
600
400
250
µs
dV/dt=20V/µs
Document TECS110, _129, _149 T001
TECS110, _129, _149
1.0
0
24
Maximum IEC class 1 currents for typical circuit type
Circuit Type
TECS110 TECS129 TECS149
Conditions
Units
AC switch
Center tap
2457
2200
2200
3125
2882
2580
2580
3625
3329
2980
2980
4227
A
A
A
A
Ta = 40 °C
Air velocity = 7.5 m/s
Two pulse regen bridge
Six pulse regen bridge
Double star with I.P. transf.
1.5;1 min
1.0
0
24
Maximum IEC class 2 currents for typical circuit type
Circuit Type
TECS110 TECS129 TECS149
Conditions
Units
TA = 40 °C
delay angle = 0°
TA = 40 °C
AC switch
Center tap
A
A
delay angle = 0°
Two pulse bridge
Six pulse bridge
Thermal and mechanical characteristics
Parameters
TECS110 TECS129 TECS149
125 125 125
-40 +70 -40 +70 -40 +70
Conditions
Units
°C
Max operating junction
temperature
Tjmax
Tstg
Storage temperature
°C
Thermal resistance
(junction to ambient)
Mounting torque -
TEC to panel (+/- 10%)
Mounting torque -
0.044
0.044
0.044
Air velocity = 7.5 m/s
°C/W
N·m
N·m
RthJA
F
14
14
14
M8 mounting screw
busbar to TEC (+/- 10%)
Overall dimensions
D
D
H
Depth
Height
Width
Mass
486
431
168
mm
mm
mm
kg
W
m
H
Document TECS110, _129, _149 T001
TECS110, _129, _149
PART-NUMBERING SYSTEM
TECS 129 - 22 - 0 0 1
1
2
3
4
5
6
1
2
3
4
5
Circuit configuration = Single SCR
Average current / 10
Blocking voltage / 100
0 = No fuse - 1 = with fuse for regen application
0 = no blown-fuse microsiwitch
0 = No snubber - 1 = one RC snubber -
R = one snubber resistor
6
Document TECS110, _129, _149 T001
TECS110, _129, _149
TECS_ - Main dimensions
dimensions in mm
Document TECS110, _129, _149 T001
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