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TF809-1200-16 [GREEGOO]

High Power Semiconductor Devices;
TF809-1200-16
型号： TF809-1200-16
厂家： GREEGOO    GREEGOO
描述：

High Power Semiconductor Devices
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1-21  
High Power Semiconductor Devices  
Fast Switching Thyristor  
TF80ꢀ 1200-1ꢁ-20  
Key Parameters  
Voltage Ratings  
V DRM  
I T(AV)  
I TSM  
V TO  
r T  
~ 2000  
1205  
15  
1600  
V
A
1
Device Type VDRM/VRRM(V)  
Test Conditions  
kA  
V
1.38  
1600  
1800  
2000  
T j =125 °C  
I DRM = I RRM  
T j = 25 °C  
I DRM = I RRM  
V DM = V DRM  
1200-16  
1200-18  
1200-20  
TF809  
TF809  
TF809  
0.385  
≤
mΩ  
150 mA  
≤
5 mA  
V RM = V RRM  
Applications  
tp = 10 ms  
M.F. Inductive heating systems  
DC choppers  
V DSM = V DRM  
V RSM = V RRM  
Pulse electrical power supplies  
Features  
Outline  
Double-side cooling  
Low switching loss  
Shorter turn-off time  
Thermal & Mechanical Data  
Symb.  
Parameter  
Thermal Resistance  
Junction to Case  
Thermal Resistance  
Case ro Heatsink  
Junction Temperature  
Storage Temperature  
Mounting Force  
Max Unit  
Min Type  
R jc  
K / W  
-
-
-
-
0.020  
R cs  
K / W  
0.005  
°C  
°C  
kN  
kg  
T j  
T stg  
F
125  
150  
-
-40  
-40  
-
-
-
22  
0.47  
Weight  
m
-
-
Current Ratings  
Symb.  
I T(AV)  
Parameter  
Test Conditions  
Min  
Type  
Max  
1205  
1018  
1600  
15  
Unit  
Mean On-State Current  
Mean On-State Current  
Half Sine Wave, TC=55 oC  
Half Sine Wave, TC=70 oC  
TC =70 oC  
-
-
-
-
-
A
A
A
-
-
-
-
-
I T(AV)  
I T(RMS) RMS On-State Current  
I TSM  
I 2t  
Surge (non-repetitive) On-State Current  
Limiting load integral  
10ms, Half Sine Wave, TC =125 oC, VR = 0  
kA  
104A2s  
Sine Wave, 10ms  
113  
Greegoo Electric 5.2008  
1-22  
High Power Semiconductor Devices  
Fast Switching Thyristor  
TF80ꢀ 1200-1ꢁ-20  
Characteristics  
Symb.  
Parameter  
Test  
Conditions  
Min Type Max  
Unit  
1
VTM Peak on-state voltage  
IDRM Forward leakage current  
Reverse leakage current  
Tj = 125 °C, I TM = 2000 A  
V
-
-
2.15  
T j = 125 °C, V DRM/V RRM  
mA  
-
-
150  
IRRM  
VTO Threshold voltage  
T j = 125 °C  
T j = 125 °C  
V
mΩ  
mA  
mA  
-
-
-
-
-
-
-
-
1.38  
0.385  
300  
r T  
IH  
IL  
Slope resistance  
Holding current  
Latching current  
T j = 25 °C, I G = 2 A, I TM = 50 A, V D = 12 V  
T j = 25 °C, I G = 2 A, V D = 12 V  
1000  
Dynamic Parameters  
Symb.  
Parameter  
Test  
Conditions  
Min Type Max  
Unit  
Critical rate of rise of  
off-state voltage  
T j = 125 °C, 67%V DRM  
dv /dt  
V/us  
500  
-
1000  
-
-
T j = 125 °C, V DM = 50% V DRM, f = 1 Hz, t = 5 s,  
I TM = 2000 A, I FG = 2.0 A, tr = 0.5 µs  
Critical rate of rise of  
on-state current  
A/us  
us  
di /dt  
t gt  
1000  
T j = 25 °C, V DM = 50% V DRM, f = 1 Hz,  
Turn-on time  
-
-
-
-
-
3
50  
-
I TM = 2000 A, I FG = 2.0 A, tr = 0.5 µs, di/dt = 60 A/µs  
T j = 125 °C, tp = 1000 µs, V DM = 67% V DRM, f = 1 Hz，  
dv/dt = 20 V/µs, VR ≥ 50 V, -di/dt = 60 A/µs, IT = 1000 A  
t q  
Turn-off time  
us  
T j = 125 °C, -di /dt = 60 A/µs, tp = 1000 µs, I T = 1000 A,  
V R = 50 V, trapezoid wave  
Q rr  
Recovery Charge  
uC  
860  
Gate Parameters  
Symb.  
I GT  
Parameter  
Test  
T j = 25 °C，V D = 12V，R L = 6Ω  
T j = 25 °C，V D = 12V，R L = 6Ω  
T j = 125 °C, V D = 0.4V DRM  
T j = 125 °C  
Conditions  
Min Type Max  
Unit  
mA  
V
Gate trigger current  
Gate trigger voltage  
Gate non-trigger voltage  
40  
-
-
-
-
-
-
-
-
180  
3
V GT  
0.8  
V GD  
V
0.2  
-
V FGM Peak forward gate voltage  
V RGM Peak reverse gate voltage  
I FGM Peak forward gate current  
V
-
-
-
-
-
16  
5
T j = 125 °C  
V
T j = 125 °C  
A
4
T j = 125 °C  
P GM  
Gate power losses  
W
W
20  
4
T j = 125 °C  
P G(AV) Gate power losses (mean)  
Maximum Thermal Impedance Vs. Time  
Peak On-state Voltage Vs. Peak On-state Current  
5.3  
4.8  
4.3  
3.8  
3.3  
2.8  
2.3  
1.8  
1.3  
0.020  
0.016  
0.012  
0.008  
0.004  
0.000  
Tj=125℃  
0.001  
0.01  
0.1  
1
10  
100  
100  
1000  
ITM / A  
10000  
t / s  
Fig1. Peak On-state Voltage Vs. Peak On-state Current  
Fig2. Maximum Thermal Impedance Vs. Time  
Greegoo Electric 5.2008  
1-2ꢂ  
High Power Semiconductor Devices  
Fast Switching Thyristor  
TF80ꢀ 1200-1ꢁ-20  
Total Recovered Charge  
Sine Wave Energy per pulse  
10000  
1.00E+02  
1.00E+01  
1.00E+00  
1.00E-01  
1.00E-02  
1
Tj = 125 oC  
Tj=125℃  
2000A  
5000A  
1500A  
1000A  
500A  
3000A  
2000A  
1000  
1500A  
1000A  
500A  
100  
10  
100  
1000  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
Pulse Width / s  
-di/dt / A/µs  
Fig3. Total Recovered Charge Vs. Commutation Rate  
Surge Current Vs. Cycles  
Fig4. Sine Wave Frequency Ratings  
I 2t Vs. Time  
1.20  
1.10  
1.00  
0.90  
0.80  
0.70  
0.60  
0.50  
16  
14  
12  
10  
8
6
4
2
1
10  
1
10  
100  
n / @50 Hz  
t / ms  
Fig6. I2 t Vs. Time  
Fig5. Surge Current Vs. Cycles  
Greegoo Electric 5.2008  
1-2ꢃ  
High Power Semiconductor Devices  
Fast Switching Thyristor  
TF80ꢀ 1200-1ꢁ-20  
V GT Vs. I GT  
IGM  
IG  
≈2~5A  
16  
1
≥1.5IGT  
14  
diG/dt  
tr  
≥4A/us  
≤1us  
12  
10  
8
tp(IGM)  
≈10~20us  
A
6
4
2
B
0
0
1
2
3
4
C
IGT / A  
Fig8. VGT Vs. IGT  
Fig7. Recommended gate current waveform  
Gate Trigger Area at various Temperature  
A is Recommended Triggering Area.  
B is Unreliable Triggering Area.  
5
4
3
2
1
0
C is Recommended Gate Load Line.  
T j= - 40°C  
T j=25°C  
T j=125°  
0
100  
200  
300  
400  
500  
IGT / mA  
Fig9. Gate Trigger Area at various Temperature  
Greegoo Electric 5.2008  

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