GFC014 [GSG]
N Channel Power MOSFET with low RDS(on); N沟道功率MOSFET具有低RDS （ ON）
| 型号： | GFC014 |
| 厂家： | 
GUNTER SENICONDUCTOR GMBH. |
| 描述： | N Channel Power MOSFET with low RDS(on) |
| 文件： | 总1页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Gunter Semiconductor GmbH
GFC014
DS(on)
N Channel Power MOSFET with low R
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Low RDS(on)
Mechanical Data:
D2
Dimension
Thickness:
Metallization
Top :
1.92mm x 2.18mm
400 µm
:
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting:
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire
Solder Perform
: 5 mil Al
Absolute Maximum Rating
@Ta=25
℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Symbol
V(BR)DSS
RDS(ON)
Limit
60
Unit
V
Test Conditions
VGS=0V, ID=250
µΑ
VGS=10V, ID=6
0.2
Ω
Α
ID@25
VGS=10V
℃
10
A
ID@100
VGS=10V
℃
7.2
A
Tj
-55~175
-55~175
℃
℃
STR
T
Storage Temperature
Target Device: IRFZ14
TO-220AB
43
PD
W
@Tc=25
℃
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