GS72116ATP-15I [GSI]

SRAM;
GS72116ATP-15I
型号: GS72116ATP-15I
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

SRAM

静态存储器
文件: 总17页 (文件大小:261K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GS72116ATP/J/T/U  
6, 8, 10, 12, 15 ns  
SOJ, TSOP, FP-BGA, TQFP  
Commercial Temp  
128K x 16  
3.3 V V  
DD  
Industrial Temp  
2Mb Asynchronous SRAM  
Center V and V  
DD  
SS  
Features  
SOJ 128K x 16-Pin Configuration  
• Fast access time: 6, 8, 10, 12, 15 ns  
• CMOS low power operation: 165/125/100/85/65 mA at  
minimum cycle time  
• Single 3.3 V ± 0.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Byte control  
• Fully static operation  
• Industrial Temperature Option: 40° to 85°C  
• Package line up  
A4  
A3  
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
A6  
2
A2  
A7  
3
A1  
OE  
4
Top view  
A0  
UB  
5
CE  
LB  
6
DQ1  
DQ2  
DQ3  
DQ4  
DQ16  
DQ15  
DQ14  
7
8
J: 400 mil, 44-pin SOJ package  
9
TP: 400 mil, 44-pin TSOP Type II package  
T: 10 mm x 10 mm, 44-pin TQFP  
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package  
10  
11  
12  
13  
14  
15  
DQ13  
44-pin  
SOJ  
V
DD  
V
V
SS  
V
SS  
DD  
DQ5  
DQ6  
DQ7  
DQ8  
WE  
DQ12  
DQ11  
DQ10  
DQ9  
NC  
Description  
16  
17  
18  
19  
20  
21  
22  
The GS72116A is a high speed CMOS Static RAM organized  
as 131,072 words by 16 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS operates on a sin-  
gle 3.3 V power supply and all inputs and outputs are TTL-  
compatible. The GS72116A is available in a 6 mm x 8 mm  
Fine Pitch BGA package,, a 10 mm x 10 mm TQFP package,  
as well as in 400 mil SOJ and 400 mil TSOP Type-II packages.  
A15  
A14  
A13  
A12  
A8  
A9  
A10  
A11  
NC  
A16  
Package J  
Pin Descriptions  
Symbol  
A0A16  
Description  
Address input  
DQ1DQ16  
CE  
Data input/output  
Chip enable input  
Lower byte enable input  
(DQ1 to DQ8)  
LB  
Upper byte enable input  
(DQ9 to DQ16)  
UB  
WE  
OE  
Write enable input  
Output enable input  
+3.3 V power supply  
VDD  
VSS  
NC  
Ground  
No connect  
Rev: 1.02 10/2001  
1/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
44-Pin TQFP 128K x 16-Pin Configuration  
A16 A15 A14 A13 A12 A11 A10 A9 OE UB LB  
44 43 42 41 40 39 38 37 36 35 34  
CE  
DQ1  
DQ2  
DQ3  
DQ4  
DQ16  
DQ15  
DQ14  
DQ13  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
2
3
4
V
5
SS  
V
V
6
DD  
DD  
V
7
DQ12  
DQ11  
DQ10  
DQ9  
NC  
SS  
DQ5  
DQ6  
DQ7  
DQ8  
8
9
10  
11  
12 13 14 15 16 17 18 19 20 21 22  
WE A0 A1 A2 A3 A4 NC A5 A6 A7 A8  
Package T  
Fine Pitch BGA 128K x 16-Bump Configuration  
1
2
3
4
5
6
A
B
C
D
E
F
LB  
OE  
A0  
A3  
A1  
A4  
A6  
A7  
A2  
NC  
DQ16 UB  
CE  
DQ1  
DQ14 DQ15 A5  
DQ2 DQ3  
V
V
DD  
DQ13 NC  
DQ12 NC  
DQ4  
SS  
V
V
A16 DQ5  
DD  
SS  
DQ11 DQ10 A8  
A9  
DQ7 DQ6  
WE DQ8  
G
H
DQ9 NC  
NC A12  
A10  
A13  
A11  
A14  
A15  
NC  
6 mm x 8 mm, 0.75 mm Bump Pitch  
Top View  
Package U  
Rev: 1.02 10/2001  
2/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
TSOP-II 128K x 16-Pin Configuration  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
A4  
A3  
A5  
2
A6  
3
A2  
A7  
4
A1  
OE  
Top view  
5
A0  
UB  
6
CE  
LB  
7
DQ1  
DQ2  
DQ3  
DQ4  
DQ16  
DQ15  
DQ14  
8
9
10  
11  
12  
13  
14  
15  
DQ13  
44-pin  
V
DD  
V
V
SS  
DD  
V
SS  
TSOP II  
DQ5  
DQ6  
DQ7  
DQ8  
WE  
DQ12  
DQ11  
DQ10  
DQ9  
NC  
16  
17  
18  
19  
20  
21  
22  
A15  
A14  
A13  
A12  
A16  
A8  
A9  
A10  
A11  
NC  
Package TP  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
Buffer  
Column  
Decoder  
A16  
CE  
WE  
OE  
UB  
LB  
I/O Buffer  
Control  
_____  
_____  
DQ16  
DQ1  
Rev: 1.02 10/2001  
3/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Truth Table  
CE  
OE  
WE  
LB  
X
L
UB  
X
DQ1 to DQ8  
Not Selected  
Read  
DQ9 to DQ16  
Not Selected  
Read  
VDD Current  
H
X
X
ISB1, ISB2  
L
L
L
L
H
L
L
H
L
Read  
High Z  
H
L
High Z  
Read  
L
Write  
Write  
IDD  
X
L
H
L
Write  
Not Write, High Z  
Write  
H
X
H
Not Write, High Z  
High Z  
L
L
H
X
H
X
X
High Z  
H
High Z  
High Z  
Note: X: “H” or “L”  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
Supply Voltage  
VDD  
0.5 to +4.6  
V
0.5 to VDD +0.5  
(£ 4.6 V max.)  
Input Voltage  
VIN  
V
V
0.5 to VDD +0.5  
(£ 4.6 V max.)  
Output Voltage  
VOUT  
Allowable power dissipation  
Storage temperature  
PD  
0.7  
W
oC  
TSTG  
55 to 150  
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-  
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device  
reliability.  
Rev: 1.02 10/2001  
4/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -10/12/15  
Supply Voltage for -8  
Input High Voltage  
Symbol  
VDD  
Min  
3.0  
Typ  
3.3  
3.3  
Max  
3.6  
Unit  
V
V
V
V
VDD  
3.135  
2.0  
3.6  
VDD +0.3  
0.8  
VIH  
VIL  
Input Low Voltage  
0.3  
Ambient Temperature,  
Commercial Range  
oC  
oC  
TAc  
TAI  
0
70  
85  
Ambient Temperature,  
Industrial Range  
40  
Note:  
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.  
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.  
Capacitance  
Parameter  
Symbol  
CIN  
Test Condition  
VIN = 0 V  
Max  
Unit  
pF  
Input Capacitance  
Output Capacitance  
5
7
COUT  
VOUT = 0 V  
pF  
Notes:  
1. Tested at TA = 25°C, f = 1 MHz  
2. These parameters are sampled and are not 100% tested.  
DC I/O Pin Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
Input Leakage  
Current  
VIN = 0 to VDD  
IIL  
1 uA  
1 uA  
1 uA  
1 uA  
Output High Z  
VOUT = 0 to VDD  
Output Leakage  
Current  
ILO  
Output High Voltage  
Output Low Voltage  
VOH  
VOL  
IOH = 4mA  
2.4  
ILO = +4mA  
0.4 V  
Rev: 1.02 10/2001  
5/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Power Supply Currents  
0 to 70°C  
10 ns 12 ns 15 ns  
40 to 85°C  
Parameter Symbol Test Conditions  
6 ns  
8 ns  
8 ns  
10 ns  
12 ns  
15 ns  
CE £ VIL  
Operating  
Supply  
Current  
All other inputs  
³ VIH or £ VIL  
Min. cycle time  
IOUT = 0 mA  
IDD (max)  
165 mA 125 mA 100 mA 85 mA 65 mA 170 mA 130 mA 105 mA 90 mA 70 mA  
CE ³ VIH  
Standby  
Current  
ISB1  
(max)  
All other inputs  
³ VIH or £VIL  
Min. cycle time  
25 mA  
20 mA  
20 mA  
5 mA  
15 mA 12 mA 30 mA  
25 mA  
25 mA  
10 mA  
20 mA 17 mA  
CE ³ VDD 0.2 V  
Standby  
Current  
ISB2  
(max)  
All other inputs  
³ VDD 0.2 V or  
£ 0.2 V  
AC Test Conditions  
Output Load 1  
Parameter  
Input high level  
Input low level  
Input rise time  
Input fall time  
Conditions  
VIH = 2.4 V  
VIL = 0.4 V  
tr = 1 V/ns  
tf = 1 V/ns  
1.4 V  
DQ  
30pF1  
50W  
VT = 1.4 V  
Input reference level  
Output reference level  
Output load  
Output Load 2  
1.4 V  
3.3 V  
Fig. 1& 2  
589W  
434W  
DQ  
Note:  
1. Include scope and jig capacitance.  
5pF1  
2. Test conditions as specified with output loading as shown in Fig. 1  
unless otherwise noted.  
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ  
Rev: 1.02 10/2001  
6/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
AC Characteristics  
Read Cycle  
-6  
-8  
-10  
-12  
-15  
Parameter  
Symbol  
Unit  
Min  
6
Max  
Min  
8
Max Min Max Min Max  
Min  
15  
3
Max  
15  
15  
6
Read cycle time  
tRC  
tAA  
tAC  
tAB  
tOE  
tOH  
8
10  
3
10  
10  
4
12  
3
12  
12  
5
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address access time  
3
6
3
Chip enable access time (CE)  
Byte enable access time (UB, LB)  
Output enable to output valid (OE)  
Output hold from address change  
Chip enable to output in low Z (CE)  
6
8
3.0  
3.0  
3.5  
3.5  
4
5
6
*
3
3
3
3
3
tLZ  
*
Output enable to output in low Z (OE)  
Byte enable to output in low Z (UB, LB)  
Chip disable to output in High Z (CE)  
Output disable to output in High Z (OE)  
Byte disable to output in High Z (UB, LB)  
0
0
4
0
5
0
6
0
7
ns  
ns  
ns  
ns  
ns  
tOLZ  
*
0
0
0
0
0
tBLZ  
*
3
tHZ  
*
3.0  
3.0  
3.5  
3.5  
4
5
6
tOHZ  
*
4
5
6
tBHZ  
* These parameters are sampled and are not 100% tested.  
Read Cycle 1: CE = OE = V , WE = V , UB and, or LB = V  
IL  
IH  
IL  
tRC  
Address  
tAA  
tOH  
Data Out  
Previous Data  
Data valid  
Rev: 1.02 10/2001  
7/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Read Cycle 2: WE = V  
IH  
tRC  
Address  
CE  
tAA  
tAC  
tHZ  
tLZ  
tAB  
UB, LB  
OE  
tBHZ  
tOHZ  
tBLZ  
tOLZ  
tOE  
Data valid  
Data Out  
High impedance  
Write Cycle  
-6  
-8  
-10  
-12  
-15  
Unit  
Parameter  
Symbol  
Min Max  
Min  
Max  
Min  
10  
7
Max  
Min  
12  
8
Max Min Max  
Write cycle time  
tWC  
tAW  
tCW  
tBW  
tDW  
tDH  
6
5.0  
5.0  
5.0  
3.0  
0
8
5.5  
5.5  
5.5  
4
15  
10  
10  
10  
7
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address valid to end of write  
Chip enable to end of write  
Byte enable to end of write  
Data set up time  
7
8
7
8
5
6
Data hold time  
0
0
0
0
Write pulse width  
tWP  
tAS  
5.0  
0
5.5  
0
7
8
10  
0
Address set up time  
0
0
Write recovery time (WE)  
Write recovery time (CE)  
Output Low Z from end of write  
tWR  
tWR1  
0
0
0
0
0
0
0
0
0
0
tWLZ*  
tWHZ*  
3
3
3
3
3
Write to output in High Z  
3.0  
3.5  
4
5
6
ns  
* These parameters are sampled and are not 100% tested.  
Rev: 1.02 10/2001  
8/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Write Cycle 1: WE control  
tWC  
Address  
tAW  
tWR  
OE  
CE  
tCW  
tBW  
UB, LB  
WE  
tAS  
tWP  
tDW  
tDH  
Data valid  
Data In  
tWHZ  
tWLZ  
High impedance  
Data Out  
Write Cycle 2: CE control  
tWC  
Address  
OE  
tAW  
tWR1  
tAS  
tCW  
tBW  
CE  
UB, LB  
WE  
tWP  
tDW  
tDH  
Data valid  
Data In  
Data Out  
High impedance  
Rev: 1.02 10/2001  
9/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Write Cycle 3: UB, LB control  
tWC  
Address  
tAW  
tWR1  
OE  
CE  
tAS  
tCW  
tBW  
UB, LB  
WE  
tWP  
tDW  
tDH  
Data valid  
Data In  
Data Out  
High impedance  
Rev: 1.02 10/2001  
10/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
44-Pin, 400 mil SOJ  
Dimension in inch  
min nom max  
Dimension in mm  
Symbol  
min  
nom  
max  
3.759  
L
D
A
A1  
A2  
B
0.148  
c
44  
23  
22  
0.025  
0.635  
0.105 0.110 0.115 2.667 2.794 2.921  
0.018 0.457  
0.026 0.028 0.032 0.660 0.711 0.813  
0.008 0.203  
B1  
c
1
D
1.120 1.125 1.130 28.44 28.58 28.70  
0.395 0.400 0.405 10.033 10.160 10.287  
e
A
E
e
0.05  
1.27  
HE  
GE  
L
0.435 0.440 0.445 11.049 11.176 11.303  
0.360 0.370 0.380 9.144 9.398 9.652  
B
B1  
y
Q
0.082 0.087 0.106 2.083 2.210  
2.70  
Detail A  
y
0.004  
7o  
0.102  
0o  
0o  
7o  
Q
Note:  
1. Dimension D& E do not include interlead flash.  
2. Dimension B1 does not include dambar protrusion/intrusion.  
3. Controlling dimension: inches  
Rev: 1.02 10/2001  
11/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
44-Pin, 400 mil TSOP-II  
Dimension in inch  
Dimension in mm  
Symbol  
min  
nom max  
min  
nom max  
D
c
44  
23  
22  
A
A1  
A2  
B
0.047  
1.20  
0.002  
0.05  
0.037 0.039 0.041 0.95  
0.01 0.014 0.018 0.25  
1.00  
0.35  
0.15  
1.05  
0.45  
A
c
0.006  
D
0.721 0.725 0.729 18.31 18.41 18.51  
0.396 0.400 0.404 10.06 10.16 10.26  
1
E
e
B
e
0.031  
0.80  
HE  
L
0.455 0.463 0.471 11.56 11.76 11.96  
0.016 0.020 0.024 0.40  
0.50  
0.80  
0.60  
y
L1  
y
0.031  
0.004  
0.10  
0o  
5o  
0o  
5o  
Q
Q
Detail A  
Note:  
1. Dimension D& E do not include interlead flash.  
2. Dimension B does not include dambar protrusion/intrusion.  
3. Controlling dimension: mm  
Rev: 1.02 10/2001  
12/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
44-Pin TQFP (LQFP) Package  
D1  
A2  
A1  
E1  
L1  
C
e
b
Body Size  
Standoff  
Body Thickness  
Lead Length  
Lead Width  
Lead Thickness  
Lead Pitch  
Lead Count  
E1  
D1  
A1  
A2  
L1  
b
c
e
10  
10  
44  
0.1  
1.4  
1.0  
0.3  
0.127  
0.8  
Units: mm  
Rev: 1.02 10/2001  
13/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
6 mm x 8 mm Fine Pitch BGA  
0 1 . 0 ± 0 0 . 8  
0.10  
5 2 . 5  
Rev: 1.02 10/2001  
14/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Ordering Information  
*
Package  
Access Time  
Temp. Range  
Status  
Part Number  
GS72116ATP-6  
GS72116ATP-8  
GS72116ATP-10  
GS72116ATP-12  
GS72116ATP-15  
GS72116ATP-6I  
GS72116ATP-8I  
GS72116ATP-10I  
GS72116ATP-12I  
GS72116ATP-15I  
GS72116AJ-6  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil TSOP-II  
400 mil SOJ  
6 ns  
8 ns  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Industrial  
10 ns  
12 ns  
15 ns  
6 ns  
8 ns  
Industrial  
10 ns  
12 ns  
15 ns  
6 ns  
Industrial  
Industrial  
Industrial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Industrial  
GS72116AJ-8  
400 mil SOJ  
8 ns  
GS72116AJ-10  
GS72116AJ-12  
GS72116AJ-15  
GS72116AJ-6I  
GS72116AJ-8I  
GS72116AJ-10I  
GS72116AJ-12I  
GS72116AJ-15I  
GS72116AT-6  
400 mil SOJ  
10 ns  
12 ns  
15 ns  
6 ns  
400 mil SOJ  
400 mil SOJ  
400 mil SOJ  
400 mil SOJ  
8 ns  
Industrial  
400 mil SOJ  
10 ns  
12 ns  
15 ns  
6 ns  
Industrial  
400 mil SOJ  
Industrial  
400 mil SOJ  
Industrial  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
44-pin TQFP  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Industrial  
GS72116AT-8  
8 ns  
GS72116AT-10  
GS72116AT-12  
GS72116AT-15  
GS72116AT-6I  
GS72116AT-8I  
GS72116AT-10I  
GS72116AT-12I  
10 ns  
12 ns  
15 ns  
6 ns  
8 ns  
Industrial  
10 ns  
12 ns  
Industrial  
Industrial  
Rev: 1.02 10/2001  
15/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
Ordering Information  
*
Package  
Access Time  
Temp. Range  
Status  
Part Number  
GS72116AT-15I  
GS72116AU-6  
GS72116AU-8  
GS72116AU-10  
GS72116AU-12  
GS72116AU-15  
GS72116AU-6I  
GS72116AU-8I  
GS72116AU-10I  
GS72116AU-12I  
GS72116AU-15I  
44-pin TQFP  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
Fine Pitch BGA  
15 ns  
6 ns  
Industrial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Industrial  
8 ns  
10 ns  
12 ns  
15 ns  
6 ns  
8 ns  
Industrial  
10 ns  
12 ns  
15 ns  
Industrial  
Industrial  
Industrial  
* Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example:  
GS72116ATP-8T  
Rev: 1.02 10/2001  
16/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS72116ATP/J/T/U  
2M Asynchronous Datasheet Revision History  
Rev. Code: Old;  
New  
Types of Changes  
Format or Content  
Page #/Revisions/Reason  
• Creation of new datasheet  
72116A_r1  
• Added 6 ns speed bin to entire document  
• Updated all power numbers  
72116A_r1; 72116A_r1_01  
Content  
Content  
72116A_r1_01; 72116A_r1_02  
Rev: 1.02 10/2001  
17/17  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

相关型号:

GS72116ATP-6I

Standard SRAM, 128KX16, 6ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
GSI

GS72116ATP-6IT

Standard SRAM, 128KX16, 6ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
GSI

GS72116ATP-7

128K x 16 2Mb Asynchronous SRAM
GSI

GS72116ATP-7I

128K x 16 2Mb Asynchronous SRAM
GSI

GS72116ATP-7T

暂无描述
GSI

GS72116ATP-8

128K x 16 2Mb Asynchronous SRAM
GSI

GS72116ATP-8I

128K x 16 2Mb Asynchronous SRAM
GSI

GS72116ATP-8IT

Standard SRAM, 128KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
GSI

GS72116ATP-8T

Standard SRAM, 128KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
GSI

GS72116AU

128K x 16 2Mb Asynchronous SRAM
GSI

GS72116AU-10

128K x 16 2Mb Asynchronous SRAM
GSI

GS72116AU-10I

128K x 16 2Mb Asynchronous SRAM
GSI