GS78108AB [GSI]

1M x 8 8Mb Asynchronous SRAM; 1M ×8的8Mb异步SRAM
GS78108AB
型号: GS78108AB
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

1M x 8 8Mb Asynchronous SRAM
1M ×8的8Mb异步SRAM

静态存储器
文件: 总11页 (文件大小:675K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GS78108AB  
BGA  
Commercial Temp  
Industrial Temp  
1M x 8  
8, 10, 12 ns  
3.3 V V  
DD  
8Mb Asynchronous SRAM  
Features  
• Fast access time: 8, 10, 12 ns  
• CMOS low power operation: 240/190/170 mA at minimum  
cycle time  
• Single 3.3 V ± 0.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40° to 85°C  
• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array  
package  
Pin Descriptions  
Description  
Symbol  
A0 to A19  
DQ1 to DQ8  
CE  
Address input  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
WE  
OE  
• RoHS-compliant package available  
V
DD  
V
Ground  
SS  
Description  
NC  
No connect  
The GS78108A is a high speed CMOS Static RAM organized  
as 1,048,576-words by 8-bits. Static design eliminates the need  
for external clocks or timing strobes. The GS78108operates on  
a single 3.3 V power supply, and all inputs and outputs are  
TTL-compatible. The GS7810A8 is available in a  
14 mm x 22 mm BGA package.  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
Buffer  
Column  
Decoder  
A19  
CE  
WE  
OE  
I/O Buffer  
Control  
DQ8  
DQ1  
Rev: 1.04 5/2006  
1/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
1M x 8 Async SRAM in Bump, 14x22mm BGA—Top View (Package B)  
1
2
3
4
5
6
7
A
B
NC  
NC  
A15  
A11  
A14  
A10  
A16  
CE  
A13  
A9  
A12  
A8  
NC  
NC  
V
,
VSS,  
NC  
DD  
C
NC  
NC  
A17  
NC  
NC  
NC  
V
V
V
V
V
DD  
D
E
F
NC  
NC  
NC  
NC  
DD  
SS  
SS  
SS  
V
V
V
NC  
NC  
DD  
SS  
DD  
V
V
V
V
V
V
DD  
NC  
NC  
DD  
SS  
SS  
SS  
V
V
G
H
J
DQ1  
DQ2  
NC  
NC  
DQ5  
DQ6  
DD  
SS  
DD  
V
V
V
V
V
DD  
DD  
SS  
DD  
SS  
SS  
V
V
V
V
V
V
V
DD  
SS  
SS  
DD  
SS  
DD  
DD  
V
V
V
V
V
V
K
L
DQ3  
DQ4  
NC  
NC  
NC  
NC  
NC  
A18  
DQ7  
DQ8  
NC  
NC  
NC  
NC  
NC  
A19  
DD  
SS  
SS  
SS  
V
V
NC  
NC  
DD  
SS  
DD  
V
V
V
V
V
DD  
M
N
P
R
T
DD  
SS  
DD  
SS  
SS  
V
V
V
NC  
NC  
SS  
DD  
V
V
V
V
V
DD  
DD  
SS  
SS  
SS  
NC  
NC  
A6  
NC  
WE  
OE  
NC  
A5  
NC  
A7  
A3  
A4  
A0  
U
A2  
A1  
Note:  
Bumps 3C and 5C are actually NC’s but should be wired 3C = VDD and 5C = Vss to assure compatibility with future versions.  
Rev: 1.04 5/2006  
2/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Truth Table  
CE  
V
Current  
OE  
WE  
DQ1 to DQ8  
DD  
H
L
L
L
X
L
X
H
L
Not Selected  
Read  
ISB1, ISB2  
I
X
H
Write  
DD  
H
High Z  
X: “H” or “L”  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
Unit  
V
Supply Voltage  
–0.5 to +4.6  
V
DD  
–0.5 to V +0.5  
DD  
V
Input Voltage  
V
IN  
(4.6 V max.)  
–0.5 to V +0.5  
DD  
V
Output Voltage  
V
OUT  
(4.6 V max.)  
Allowable power dissipation  
Storage temperature  
PD  
1.5  
W
o
T
–55 to 150  
C
STG  
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended  
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -8/10/12  
Input High Voltage  
Symbol  
Min  
3.0  
Typ  
3.3  
Max  
Unit  
V
3.6  
V
V
V
DD  
V
V
+0.3  
DD  
2.0  
IH  
V
Input Low Voltage  
–0.3  
0.8  
IL  
Ambient Temperature,  
Commercial Range  
o
T
0
70  
85  
C
Ac  
Ambient Temperature,  
Industrial Range  
o
T
–40  
C
Ai  
Notes:  
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.  
DD  
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.  
Rev: 1.04 5/2006  
3/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Capacitance  
Parameter  
Symbol  
Test Condition  
Max  
10  
Unit  
pF  
C
V
= 0 V  
= 0 V  
Input Capacitance  
Output Capacitance  
IN  
IN  
C
V
OUT  
7
pF  
OUT  
Notes:  
1. Tested at T = 25°C, f = 1 MHz  
A
2. These parameters are sampled and are not 100% tested  
DC I/O Pin Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
I
V = 0 to V  
IN DD  
Input Leakage Current  
–2 uA  
2 uA  
IL  
Output High Z,  
I
Output Leakage Current  
–1 uA  
2.4  
1 uA  
OL  
V
= 0 to V  
OUT  
DD  
V
I
= –4 mA  
= +4 mA  
Output High Voltage  
Output Low Voltage  
OH  
OH  
V
I
0.4 V  
OL  
OL  
Power Supply Currents  
0 to 70°C  
10 ns  
–40 to 85°C  
Parameter  
Symbol  
Test Conditions  
8 ns  
12 ns  
8 ns  
10 ns  
12 ns  
E V  
IL  
All other inputs  
Operating  
Supply  
I
V or V  
160 mA  
130 mA  
115 mA  
180 mA  
80 mA  
150 mA  
135 mA  
DD  
IH  
IL  
Current  
Min. cycle time  
= 0 mA  
I
OUT  
E V  
IH  
Standby  
Current  
All other inputs  
I
I
60 mA  
50 mA  
20 mA  
50 mA  
70 mA  
40 mA  
70 mA  
SB1  
SB2  
V or V  
IH  
IL  
Min. cycle time  
E V - 0.2V  
DD  
Standby  
Current  
All other inputs  
V - 0.2V or 0.2V  
DD  
Rev: 1.04 5/2006  
4/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
AC Test Conditions  
Output Load 1  
Parameter  
Conditions  
DQ  
V
= 2.4 V  
Input high level  
IH  
1
30pF  
50Ω  
V = 0.4 V  
Input low level  
Input rise time  
IL  
VT = 1.4 V  
tr = 1 V/ns  
tf = 1 V/ns  
1.4 V  
Input fall time  
Output Load 2  
Input reference level  
Output reference level  
Output load  
3.3 V  
1.4 V  
Fig. 1& 2  
589Ω  
434Ω  
DQ  
Notes:  
1
5pF  
1. Include scope and jig capacitance.  
2. Test conditions as specified with output loading as shown in Fig. 1  
unless otherwise noted  
3. Output load 2 for t , t , t  
and t  
.
OHZ  
LZ HZ OLZ  
AC Characteristics  
Read Cycle  
-8  
-10  
-12  
Parameter  
Symbol  
Unit  
Min  
8
Max  
8
Min  
Max  
Min  
12  
3
Max  
Read cycle time  
tRC  
tAA  
tAC  
tOE  
tOH  
10  
3
ns  
ns  
ns  
ns  
ns  
ns  
Address access time  
3
10  
10  
4
12  
12  
5
Chip enable access time (CE)  
8
Output enable to output valid (OE)  
Output hold from address change  
Chip enable to output in low Z (CE)  
3.5  
*
3
3
3
tLZ  
*
Output enable to output in low Z (OE)  
Chip disable to output in High Z (CE)  
Output disable to output in High Z (OE)  
0
4
0
5
0
6
ns  
ns  
ns  
tOLZ  
*
tHZ  
*
3.5  
4
5
tOHZ  
Rev: 1.04 5/2006  
5/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Read Cycle 1:CE = OE = VIL  
t
RC  
Address  
Data Out  
t
AA  
t
OH  
Previous Data  
Data valid  
* These parameters are sampled and are not 100% tested  
Write Cycle  
-8  
-10  
-12  
Parameter  
Symbol  
Unit  
Min  
Max  
Min  
10  
7
Max  
Min  
12  
8
Max  
Write cycle time  
Address valid to end of write  
Chip enable to end of write  
Data set up time  
tWC  
tAW  
tCW  
tDW  
tDH  
8
5.5  
5.5  
4
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
7
8
5
6
Data hold time  
0
0
0
Write pulse width  
tWP  
tAS  
5.5  
0
7
8
Address set up time  
0
0
Write recovery time (WE)  
Write recovery time (CE)  
Output Low Z from end of write  
tWR  
tWR1  
0
0
0
0
0
0
*
3
3
3
tWLZ  
*
Write to output in High Z  
3.5  
4
5
ns  
tWHZ  
Rev: 1.04 5/2006  
6/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Write Cycle 1: WE Controlled  
t
WC  
Address  
OE  
t
t
WR  
AW  
t
CW  
CE  
t
t
WP  
AS  
WE  
t
t
DH  
DW  
Data valid  
Data In  
t
t
WHZ  
WLZ  
Data Out  
High impedance  
Write Cycle 2: CE Controlled  
t
WC  
Address  
t
t
WR1  
AW  
OE  
CE  
t
t
CW  
AS  
t
WP  
WE  
t
t
DH  
DW  
Data valid  
Data In  
Data Out  
High impedance  
Rev: 1.04 5/2006  
7/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Package Dimensions—119-Bump FPBGA (Package B, Variation 1)  
(Date Code: yyww.31)  
Pin #1 Corner  
BOTTOM VIEW  
A1  
S
Ø0.10  
C
S
S
S
Ø0.30 C A  
B
Ø0.60~0.90 (119x)  
1
2
3
4 5 6 7  
Ø1.00(3x) REF  
7
6
5
4 3  
2
1
A
B
C
D
E
F
A
B
C
D
E
F
G
H
J
G
H
J
K
L
M
N
P
K
L
M
N
P
R
T
U
R
T
U
B
0.70 REF  
1.27  
7.62  
12.00  
14±0.20  
A
0.20(4x)  
30 TYP.  
SEATING PLANE  
C
Rev: 1.04 5/2006  
8/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Package Dimensions—119-Bump FPBGA (Package B, Variation 2)  
(Date Code: yyww.3H)  
TOP VIEW  
BOTTOM VIEW  
A1  
S
A1  
Ø0.10  
C
S
S
S
Ø0.30 C A  
B
Ø0.60~0.90 (119x)  
1
2
3
4
5
6
7
7
6
5
4 3  
2
1
A
A
B
C
D
E
F
B
C
D
E
F
G
H
J
G
H
J
K
L
M
N
P
K
L
M
N
P
R
T
U
R
T
U
B
1.27  
7.62  
14±0.10  
A
0.20(4x)  
SEATING PLANE  
C
Rev: 1.04 5/2006  
9/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Ordering Information  
1
Package  
Access Time  
8 ns  
Temp. Range  
Commercial  
Commercial  
Commercial  
Industrial  
Status  
Part Number  
2
2
2
2
2
2
2
GS78108AB-8  
GS78108AB-10  
GS78108AB-12  
GS78108AB-8I  
GS78108AB-10I  
GS78108AB-12I  
GS78108AB-15I  
119-Bump BGA  
119-Bump BGA  
119-Bump BGA  
119-Bump BGA  
119-Bump BGA  
119-Bump BGA  
119-Bump BGA  
10 ns  
12 ns  
8 ns  
10 ns  
Industrial  
12 ns  
Industrial  
15 ns  
Industrial  
RoHS-compliant  
GS78108AGB-8  
GS78108AGB-10  
GS78108AGB-12  
GS78108AGB-8I  
GS78108AGB-10I  
GS78108AGB-12I  
8 ns  
10 ns  
12 ns  
8 ns  
Commercial  
Commercial  
Commercial  
Industrial  
2
119-Bump BGA  
RoHS-compliant  
2
119-Bump BGA  
RoHS-compliant  
2
119-Bump BGA  
RoHS-compliant  
2
119-Bump BGA  
RoHS-compliant  
10 ns  
12 ns  
15 ns  
Industrial  
2
119-Bump BGA  
RoHS-compliant  
Industrial  
2
119-Bump BGA  
RoHS-compliant  
GS78108AGB-15I  
Industrial  
2
119-Bump BGA  
Notes:  
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.  
For example: GS78108AB-12T  
2. Please see pages 8 and 9 for date code information for Variation 1 and Variation 2 of the 119-bump BGA.  
Rev: 1.04 5/2006  
10/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
GS78108AB  
Revision History  
Rev. Code: Old;  
Types of Changes  
Format or Content  
Page #/Revisions/Reason  
New  
• Creation of new datasheet  
GS78108AB_r1  
GS78108AB_r1_01  
• Added AC specifications to datasheet  
Content  
• Updated format  
• Added variation information to package mechanical  
GS78108AB_r1_01;  
GS78108AB_r1_02  
Content/Format  
• Added Variation 2 119 BGA to datasheet  
• Added date codes to mechanicals  
GS78108AB_r1_02;  
GS78108AB_r1_03  
Content  
Content  
• Added RoHS-compliant package information  
GS78108AB_r1_03;  
GS78108AB_r1_04  
Rev: 1.04 5/2006  
11/11  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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