GS78108AB [GSI]
1M x 8 8Mb Asynchronous SRAM; 1M ×8的8Mb异步SRAM型号: | GS78108AB |
厂家: | GSI TECHNOLOGY |
描述: | 1M x 8 8Mb Asynchronous SRAM |
文件: | 总11页 (文件大小:675K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GS78108AB
BGA
Commercial Temp
Industrial Temp
1M x 8
8, 10, 12 ns
3.3 V V
DD
8Mb Asynchronous SRAM
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 240/190/170 mA at minimum
cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array
package
Pin Descriptions
Description
Symbol
A0 to A19
DQ1 to DQ8
CE
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
WE
OE
• RoHS-compliant package available
V
DD
V
Ground
SS
Description
NC
No connect
The GS78108A is a high speed CMOS Static RAM organized
as 1,048,576-words by 8-bits. Static design eliminates the need
for external clocks or timing strobes. The GS78108operates on
a single 3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS7810A8 is available in a
14 mm x 22 mm BGA package.
Block Diagram
A0
Row
Decoder
Memory Array
Address
Input
Buffer
Column
Decoder
A19
CE
WE
OE
I/O Buffer
Control
DQ8
DQ1
Rev: 1.04 5/2006
1/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
1M x 8 Async SRAM in Bump, 14x22mm BGA—Top View (Package B)
1
2
3
4
5
6
7
A
B
NC
NC
A15
A11
A14
A10
A16
CE
A13
A9
A12
A8
NC
NC
V
,
VSS,
NC
DD
C
NC
NC
A17
NC
NC
NC
V
V
V
V
V
DD
D
E
F
NC
NC
NC
NC
DD
SS
SS
SS
V
V
V
NC
NC
DD
SS
DD
V
V
V
V
V
V
DD
NC
NC
DD
SS
SS
SS
V
V
G
H
J
DQ1
DQ2
NC
NC
DQ5
DQ6
DD
SS
DD
V
V
V
V
V
DD
DD
SS
DD
SS
SS
V
V
V
V
V
V
V
DD
SS
SS
DD
SS
DD
DD
V
V
V
V
V
V
K
L
DQ3
DQ4
NC
NC
NC
NC
NC
A18
DQ7
DQ8
NC
NC
NC
NC
NC
A19
DD
SS
SS
SS
V
V
NC
NC
DD
SS
DD
V
V
V
V
V
DD
M
N
P
R
T
DD
SS
DD
SS
SS
V
V
V
NC
NC
SS
DD
V
V
V
V
V
DD
DD
SS
SS
SS
NC
NC
A6
NC
WE
OE
NC
A5
NC
A7
A3
A4
A0
U
A2
A1
Note:
Bumps 3C and 5C are actually NC’s but should be wired 3C = VDD and 5C = Vss to assure compatibility with future versions.
Rev: 1.04 5/2006
2/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Truth Table
CE
V
Current
OE
WE
DQ1 to DQ8
DD
H
L
L
L
X
L
X
H
L
Not Selected
Read
ISB1, ISB2
—
I
X
H
Write
DD
H
High Z
—
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
V
Supply Voltage
–0.5 to +4.6
V
DD
–0.5 to V +0.5
DD
V
Input Voltage
V
IN
(≤ 4.6 V max.)
–0.5 to V +0.5
DD
V
Output Voltage
V
OUT
(≤ 4.6 V max.)
Allowable power dissipation
Storage temperature
PD
1.5
W
o
T
–55 to 150
C
STG
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -8/10/12
Input High Voltage
Symbol
Min
3.0
Typ
3.3
—
Max
Unit
V
3.6
V
V
V
DD
V
V
+0.3
DD
2.0
IH
V
Input Low Voltage
–0.3
—
0.8
IL
Ambient Temperature,
Commercial Range
o
T
0
—
—
70
85
C
Ac
Ambient Temperature,
Industrial Range
o
T
–40
C
Ai
Notes:
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.
DD
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.04 5/2006
3/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Capacitance
Parameter
Symbol
Test Condition
Max
10
Unit
pF
C
V
= 0 V
= 0 V
Input Capacitance
Output Capacitance
IN
IN
C
V
OUT
7
pF
OUT
Notes:
1. Tested at T = 25°C, f = 1 MHz
A
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
I
V = 0 to V
IN DD
Input Leakage Current
–2 uA
2 uA
IL
Output High Z,
I
Output Leakage Current
–1 uA
2.4
1 uA
OL
V
= 0 to V
OUT
DD
V
I
= –4 mA
= +4 mA
Output High Voltage
Output Low Voltage
OH
OH
V
I
0.4 V
OL
OL
Power Supply Currents
0 to 70°C
10 ns
–40 to 85°C
Parameter
Symbol
Test Conditions
8 ns
12 ns
8 ns
10 ns
12 ns
E ≤ V
IL
All other inputs
Operating
Supply
I
≥ V or ≤ V
160 mA
130 mA
115 mA
180 mA
80 mA
150 mA
135 mA
DD
IH
IL
Current
Min. cycle time
= 0 mA
I
OUT
E ≥ V
IH
Standby
Current
All other inputs
I
I
60 mA
50 mA
20 mA
50 mA
70 mA
40 mA
70 mA
SB1
SB2
≥ V or ≤V
IH
IL
Min. cycle time
E ≥ V - 0.2V
DD
Standby
Current
All other inputs
≥ V - 0.2V or ≤ 0.2V
DD
Rev: 1.04 5/2006
4/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
AC Test Conditions
Output Load 1
Parameter
Conditions
DQ
V
= 2.4 V
Input high level
IH
1
30pF
50Ω
V = 0.4 V
Input low level
Input rise time
IL
VT = 1.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
Input fall time
Output Load 2
Input reference level
Output reference level
Output load
3.3 V
1.4 V
Fig. 1& 2
589Ω
434Ω
DQ
Notes:
1
5pF
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for t , t , t
and t
.
OHZ
LZ HZ OLZ
AC Characteristics
Read Cycle
-8
-10
-12
Parameter
Symbol
Unit
Min
8
Max
—
8
Min
Max
—
Min
12
—
—
—
3
Max
—
Read cycle time
tRC
tAA
tAC
tOE
tOH
10
—
—
—
3
ns
ns
ns
ns
ns
ns
Address access time
—
—
—
3
10
10
4
12
12
5
Chip enable access time (CE)
8
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
3.5
—
—
—
—
*
3
3
—
3
—
tLZ
*
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
0
—
4
0
—
5
0
—
6
ns
ns
ns
tOLZ
*
—
—
—
—
—
—
tHZ
*
3.5
4
5
tOHZ
Rev: 1.04 5/2006
5/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Read Cycle 1:CE = OE = VIL
t
RC
Address
Data Out
t
AA
t
OH
Previous Data
Data valid
* These parameters are sampled and are not 100% tested
Write Cycle
-8
-10
-12
Parameter
Symbol
Unit
Min
Max
—
—
—
—
—
—
—
—
—
—
Min
10
7
Max
—
—
—
—
—
—
—
—
—
—
Min
12
8
Max
Write cycle time
Address valid to end of write
Chip enable to end of write
Data set up time
tWC
tAW
tCW
tDW
tDH
8
5.5
5.5
4
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—
—
—
—
—
—
—
—
—
7
8
5
6
Data hold time
0
0
0
Write pulse width
tWP
tAS
5.5
0
7
8
Address set up time
0
0
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
tWR
tWR1
0
0
0
0
0
0
*
3
3
3
tWLZ
*
Write to output in High Z
—
3.5
—
4
—
5
ns
tWHZ
Rev: 1.04 5/2006
6/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Write Cycle 1: WE Controlled
t
WC
Address
OE
t
t
WR
AW
t
CW
CE
t
t
WP
AS
WE
t
t
DH
DW
Data valid
Data In
t
t
WHZ
WLZ
Data Out
High impedance
Write Cycle 2: CE Controlled
t
WC
Address
t
t
WR1
AW
OE
CE
t
t
CW
AS
t
WP
WE
t
t
DH
DW
Data valid
Data In
Data Out
High impedance
Rev: 1.04 5/2006
7/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Package Dimensions—119-Bump FPBGA (Package B, Variation 1)
(Date Code: yyww.31)
Pin #1 Corner
BOTTOM VIEW
A1
S
Ø0.10
C
S
S
S
Ø0.30 C A
B
Ø0.60~0.90 (119x)
1
2
3
4 5 6 7
Ø1.00(3x) REF
7
6
5
4 3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
G
H
J
G
H
J
K
L
M
N
P
K
L
M
N
P
R
T
U
R
T
U
B
0.70 REF
1.27
7.62
12.00
14±0.20
A
0.20(4x)
30 TYP.
SEATING PLANE
C
Rev: 1.04 5/2006
8/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Package Dimensions—119-Bump FPBGA (Package B, Variation 2)
(Date Code: yyww.3H)
TOP VIEW
BOTTOM VIEW
A1
S
A1
Ø0.10
C
S
S
S
Ø0.30 C A
B
Ø0.60~0.90 (119x)
1
2
3
4
5
6
7
7
6
5
4 3
2
1
A
A
B
C
D
E
F
B
C
D
E
F
G
H
J
G
H
J
K
L
M
N
P
K
L
M
N
P
R
T
U
R
T
U
B
1.27
7.62
14±0.10
A
0.20(4x)
SEATING PLANE
C
Rev: 1.04 5/2006
9/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Ordering Information
1
Package
Access Time
8 ns
Temp. Range
Commercial
Commercial
Commercial
Industrial
Status
Part Number
2
2
2
2
2
2
2
GS78108AB-8
GS78108AB-10
GS78108AB-12
GS78108AB-8I
GS78108AB-10I
GS78108AB-12I
GS78108AB-15I
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
10 ns
12 ns
8 ns
10 ns
Industrial
12 ns
Industrial
15 ns
Industrial
RoHS-compliant
GS78108AGB-8
GS78108AGB-10
GS78108AGB-12
GS78108AGB-8I
GS78108AGB-10I
GS78108AGB-12I
8 ns
10 ns
12 ns
8 ns
Commercial
Commercial
Commercial
Industrial
2
119-Bump BGA
RoHS-compliant
2
119-Bump BGA
RoHS-compliant
2
119-Bump BGA
RoHS-compliant
2
119-Bump BGA
RoHS-compliant
10 ns
12 ns
15 ns
Industrial
2
119-Bump BGA
RoHS-compliant
Industrial
2
119-Bump BGA
RoHS-compliant
GS78108AGB-15I
Industrial
2
119-Bump BGA
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.
For example: GS78108AB-12T
2. Please see pages 8 and 9 for date code information for Variation 1 and Variation 2 of the 119-bump BGA.
Rev: 1.04 5/2006
10/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Revision History
Rev. Code: Old;
Types of Changes
Format or Content
Page #/Revisions/Reason
New
• Creation of new datasheet
GS78108AB_r1
GS78108AB_r1_01
• Added AC specifications to datasheet
Content
• Updated format
• Added variation information to package mechanical
GS78108AB_r1_01;
GS78108AB_r1_02
Content/Format
• Added Variation 2 119 BGA to datasheet
• Added date codes to mechanicals
GS78108AB_r1_02;
GS78108AB_r1_03
Content
Content
• Added RoHS-compliant package information
GS78108AB_r1_03;
GS78108AB_r1_04
Rev: 1.04 5/2006
11/11
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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