GS78132AGB-8I [GSI]
256K x 32 8Mb Asynchronous SRAM; 256K ×32的8Mb异步SRAM型号: | GS78132AGB-8I |
厂家: | GSI TECHNOLOGY |
描述: | 256K x 32 8Mb Asynchronous SRAM |
文件: | 总12页 (文件大小:723K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GS78132AB
BGA
Commercial Temp
Industrial Temp
256K x 32
8Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V V
DD
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 260/210/180 mA at minimum
cycle time
Pin Descriptions
Description
Symbol
A0 to A17
Address input
CE
Chip enable input
Byte A Data input/output
Byte B Data input/output
Byte C Data input/output
Byte D Data input/output
Byte A Byte enable input
Byte B Byte enable input
Byte C Byte enable input
Byte D Byte enable input
Write enable input
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
DQA1 TO DQA8
DQB1 TO DQB8
• Fully static operation
DQC1 TO DQC8
• Industrial Temperature Option: –40° to 85°C
• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array
package
DQD1 TO DQD8
BA
BB
• RoHS-compliant package available
Description
BC
The GS78132A is a high speed CMOS Static RAM organized
as 262,144-words by 32-bits. Static design eliminates the need
for external clocks or timing strobes. The GS78132A operates
on a single 3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS78132A is available in a
BD
WE
OE
Output enable input
V
+3.3 V power supply
DD
14 mm x 22 mm BGA package.
V
Ground
SS
NC
No connect
Block Diagram
A0
Row
Decoder
Memory Array
Address
Input
Buffer
Column
Decoder
A17
CE
WE
OE
I/O Buffer
Control
____
Bx
DQ32
DQ1
Rev: 1.04 5/2006
1/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
256K x 32 Async SRAM in 119-bump, 14 mm x 22 mm BGA—Top View (Package B)
1
2
3
4
5
6
7
A
B
NC
BC
A15
A11
A14
A10
A16
CE
A13
A9
A12
A8
NC
BB
V
,
VSS,
NC
DD
C
DQC6
NC
A17
NC
DQB6
NC
V
V
V
V
V
DD
D
E
F
DQC5
DQC4
DQC3
DQC2
DQC1
DQB5
DQB4
DQB3
DQB2
DQB1
DD
SS
SS
SS
V
V
V
DQC8
DQB8
DD
SS
DD
V
V
V
V
V
V
DD
SS
SS
SS
DD
V
V
G
H
J
DQC7
DQB7
DD
SS
DD
V
V
V
V
V
DD
SS
DD
SS
SS
DD
V
V
V
V
V
V
V
DD
SS
SS
DD
SS
DD
V
V
V
V
V
V
K
L
DQD1
DQD2
DQD3
DQD4
DQD5
DQD6
BD
DQA1
DQA2
DQA3
DQA4
DQA5
DQA6
BA
DD
SS
SS
SS
DD
V
V
DQD7
DQA7
DD
SS
DD
V
V
V
V
V
M
N
P
R
T
DD
SS
DD
SS
SS
DD
V
V
V
DQD8
DQA8
SS
DD
V
V
V
V
V
DD
SS
SS
SS
DD
NC
A7
NC
A6
NC
WE
OE
NC
A5
NC
A4
U
NC
A3
A2
A1
A0
NC
Note:
Bumps 3C and 5C are actually NC’s but should be wired 3C = VDD and 5C = Vss to assure compatibility with future versions.
Rev: 1.04 5/2006
2/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Truth Table
Supply
Current
CE OE WE BA BB BC BD
DQA1–A8
DQB1–B8
DQC1–C8
DQD1–D8
H
L
X
L
X
X
L
X
L
X
L
X
L
Not Selected
Read
Not Selected
Read
Not Selected
Read
Not Selected
Read
ISB1, ISB2
H
L
L
L
L
High Z
Read
Read
Read
Read
H
H
L
L
L
High Z
Read
Read
Read
L
H
L
L
Read
High Z
Read
Read
L
L
H
L
Read
Read
High Z
Write
L
L
L
Write
Write
Write
IDD
H
L
L
L
L
High Z
Write
Write
Write
Write
L
X
L
H
L
L
L
High Z
Write
Write
Write
L
H
L
L
Write
High Z
Write
Write
L
L
H
X
H
Write
Write
High
L
L
H
X
H
X
X
H
X
H
X
H
High Z
High Z
High Z
High Z
High Z
High Z
High Z
High Z
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
V
Supply Voltage
–0.5 to +4.6
V
DD
–0.5 to V +0.5
DD
V
Input Voltage
V
IN
(≤ 4.6 V max.)
–0.5 to V +0.5
DD
V
Output Voltage
V
OUT
(≤ 4.6 V max.)
Allowable power dissipation
Storage temperature
PD
1.5
W
o
T
–55 to 150
C
STG
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.04 5/2006
3/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Recommended Operating Conditions
Parameter
Supply Voltage for -8/10/12
Input High Voltage
Symbol
Min
3.0
Typ
3.3
—
Max
Unit
V
3.6
V
V
V
DD
V
V
+0.3
DD
2.0
IH
V
Input Low Voltage
–0.3
—
0.8
IL
Ambient Temperature,
Commercial Range
o
T
0
—
—
70
85
C
Ac
Ambient Temperature,
Industrial Range
o
T
–40
C
Ai
Notes:
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.
DD
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
Test Condition
Max
10
Unit
pF
C
V
= 0 V
= 0 V
IN
IN
C
V
OUT
7
pF
OUT
Notes:
1. Tested at T = 25°C, f = 1 MHz
A
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
I
V = 0 to V
IN DD
Input Leakage Current
–2 uA
–1 uA
2.4
2 uA
IL
Output High Z,
I
Output Leakage Current
1 uA
OL
V
= 0 to V
OUT
DD
V
I
= –4 mA
= +4 mA
Output High Voltage
Output Low Voltage
OH
OH
V
I
0.4 V
OL
OL
Rev: 1.04 5/2006
4/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Power Supply Currents
0 to 70°C
10 ns
–40 to 85°C
Parameter
Symbol
Test Conditions
8 ns
12 ns
8 ns
10 ns
12 ns
E ≤ V
IL
All other inputs
Operating
Supply
I
≥ V or ≤ V
260 mA
210 mA
180 mA
280 mA
230 mA
200 mA
DD
IH
IL
Current
Min. cycle time
= 0 mA
I
OUT
E ≥ V
IH
Standby
Current
All other inputs
I
I
60 mA
50 mA
20 mA
50 mA
80 mA
70 mA
40 mA
70 mA
SB1
SB2
≥ V or ≤V
IH
IL
Min. cycle time
E ≥ V - 0.2V
DD
Standby
Current
All other inputs
≥ V - 0.2V or ≤ 0.2V
DD
AC Test Conditions
Parameter
Output Load 1
Conditions
DQ
V
= 2.4 V
Input high level
IH
1
30pF
50Ω
V = 0.4 V
Input low level
Input rise time
Input fall time
IL
VT = 1.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
Output Load 2
Input reference level
Output reference level
Output load
3.3 V
1.4 V
Fig. 1& 2
589Ω
434Ω
DQ
Notes:
1. Include scope and jig capacitance.
1
5pF
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for t , t , t
and t
.
OHZ
LZ HZ OLZ
Rev: 1.04 5/2006
5/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
AC Characteristics
Read Cycle
-8
-10
-12
Parameter
Symbol
Unit
Max
Min
8
Max
—
8
Min
10
—
—
—
3
Max
—
Min
12
—
—
—
3
Read cycle time
tRC
tAA
tAC
tOE
tOH
—
12
12
5
ns
ns
ns
ns
ns
ns
Address access time
—
—
—
3
10
10
4
Chip enable access time (CE)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
8
3.5
—
—
—
—
—
*
3
3
—
3
tLZ
*
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
0
—
4
0
—
5
0
—
6
ns
ns
ns
tOLZ
*
—
—
—
—
—
—
tHZ
*
3.5
4
5
tOHZ
Read Cycle 1:CE = OE = VIL , WE = VIH, BA = BB = BC = BD = VIL
t
RC
Address
Data Out
t
AA
t
OH
Previous Data
Data valid
Rev: 1.04 5/2006
6/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Read Cycle 2: WE = VIH
tRC
Address
CE
tAA
tAC
tHZ
tLZ
BA, BB,
BC, BD
tAB
tBHZ
tOHZ
tBLZ
OE
tOE
tOLZ
High impedance
Data valid
Data Out
* These parameters are sampled and are not 100% tested
Write Cycle
-8
-10
-12
Parameter
Symbol
Unit
Min
8
Max
—
—
—
—
—
—
—
—
—
—
Min
10
7
Max
—
—
—
—
—
—
—
—
—
—
Min
12
8
Max
Write cycle time
Address valid to end of write
Chip enable to end of write
Data set up time
tWC
tAW
tCW
tDW
tDH
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5.5
5.5
4
—
—
—
—
—
—
—
—
—
7
8
5
6
Data hold time
0
0
0
Write pulse width
tWP
tAS
5.5
0
7
8
Address set up time
0
0
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
tWR
tWR1
0
0
0
0
0
0
*
3
3
3
tWLZ
tWHZ
*
Write to output in High Z
—
3.5
—
4
—
5
ns
Rev: 1.04 5/2006
7/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Write Cycle 1: WE Controlled
tWC
Address
OE
tAW
tCW
tBW
tWR
CE
BA, BB,
BC, BD
tAS
tWP
WE
tDW
tDH
Data valid
Data In
Data Out
tWHZ
tWLZ
High impedance
Write Cycle 2: CE Controlled
tWC
Address
OE
tAW
tWR1
tAS
tCW
tBW
CE
BA, BB,
BC, BD
tWP
WE
tDW
tDH
Data valid
Data In
Data Out
High impedance
Rev: 1.04 5/2006
8/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Package Dimensions—119-Bump FPBGA (Package B, Variation 1)
(Date Code: yyww.31)
Pin #1 Corner
BOTTOM VIEW
A1
S
Ø0.10
C
S
S
S
Ø0.30 C A
B
Ø0.60~0.90 (119x)
1
2
3
4 5 6 7
Ø1.00(3x) REF
7
6
5
4 3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
G
H
J
G
H
J
K
L
M
N
P
K
L
M
N
P
R
T
U
R
T
U
B
0.70 REF
1.27
7.62
12.00
14±0.20
A
0.20(4x)
30 TYP.
SEATING PLANE
C
Rev: 1.04 5/2006
9/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Package Dimensions—119-Bump FPBGA (Package B, Variation 2)
(Date Code: yyww.3H)
TOP VIEW
BOTTOM VIEW
A1
S
A1
Ø0.10
C
S
S
S
Ø0.30 C A
B
Ø0.60~0.90 (119x)
1
2
3
4
5
6
7
7
6
5
4 3
2
1
A
A
B
C
D
E
F
B
C
D
E
F
G
H
J
G
H
J
K
L
M
N
P
K
L
M
N
P
R
T
U
R
T
U
B
1.27
7.62
14±0.10
A
0.20(4x)
SEATING PLANE
C
Rev: 1.04 5/2006
10/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Ordering Information
1
Package
Access Time
8 ns
Temp. Range
Commercial
Commercial
Commercial
Industrial
Status
Part Number
2
2
2
2
2
2
2
GS78132AB-8
GS78132AB-10
GS78132AB-12
GS78132AB-8I
GS78132AB-10I
GS78132AB-12I
GS78132AB-15I
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
119-Bump BGA
10 ns
12 ns
8 ns
10 ns
Industrial
12 ns
Industrial
15 ns
Industrial
RoHS-compliant
GS78132AGB-8
GS78132AGB-10
GS78132AGB-12
GS78132AGB-8I
GS78132AGB-10I
GS78132AGB-12I
8 ns
10 ns
12 ns
8 ns
Commercial
Commercial
Commercial
Industrial
2
119-Bump BGA
RoHS-compliant
2
119-Bump BGA
RoHS-compliant
2
119-Bump BGA
RoHS-compliant
2
119-Bump BGA
RoHS-compliant
10 ns
12 ns
15 ns
Industrial
2
119-Bump BGA
RoHS-compliant
Industrial
2
119-Bump BGA
RoHS-compliant
GS78132AGB-15I
Industrial
2
119-Bump BGA
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number.
For example: GS78132AB-12T
2. Please see pages 9 and 10 for date code information for Variation 1 and Variation 2 of the 119-bump BGA.
Rev: 1.04 5/2006
11/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78132AB
Revision History
Rev. Code: Old;
Types of Changes
Format or Content
Page #/Revisions/Reason
New
• Creation of new datasheet
GS78132AB_r1
GS78132AB_r1_01
• Added AC specifications to datasheet
Content
• Updated format
• Added variation information to package mechanical
GS78132AB_r1_01;
GS78132AB_r1_02
Content/Format
• Added Variation 2 119 BGA to datasheet
• Added date codes to mechanicals
GS78132AB_r1_02;
GS78132AB_r1_03
Content
Content
• Added RoHS-compliant package information
GS78132AB_r1_03;
GS78132AB_r1_04
Rev: 1.04 5/2006
12/12
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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Standard SRAM, 256KX32, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
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GS78132B-12T
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