GS8150V36AGB-250I [GSI]

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM; 1M ×18 , 512K ×36 18MB注册,注册后写入SRAM
GS8150V36AGB-250I
型号: GS8150V36AGB-250I
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
1M ×18 , 512K ×36 18MB注册,注册后写入SRAM

存储 内存集成电路 静态存储器
文件: 总25页 (文件大小:800K)
下载:  下载PDF数据表文档文件

GS8150V36AGB-250IT

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250IT

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250T

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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23 GSI

GS8150V36AGB-300

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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14 GSI

GS8150V36AGB-300I

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300T

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300T

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-333

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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10 GSI

GS8150V36AGB-333I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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20 GSI

GS8150V36AGB-333I

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-333IT

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-333IT

Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-333T

暂无描述

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0 GSI