GS8321EV18GE-150 [GSI]
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs; 2M ×18 , 1M ×32 , 1M ×36 36MB同步突发静态存储器型号: | GS8321EV18GE-150 |
厂家: | GSI TECHNOLOGY |
描述: | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
文件: | 总33页 (文件大小:981K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GS8321EV18/32/36E-250/225/200/166/150/133
250 MHz–133 MHz
165-Bump FP-BGA
Commercial Temp
Industrial Temp
2M x 18, 1M x 32, 1M x 36
36Mb Sync Burst SRAMs
1.8 V V
DD
1.8 V I/O
Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Features
• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
• Automatic power-down for portable applications
• JEDEC-standard 165-bump FP-BGA package
• Pb-Free 165-bump BGA package available
DCD Pipelined Reads
The GS8321EV18/32/36E is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Functional Description
Applications
The GS8321EV18/32/36E is a 37,748,736-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip
set support.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx,
BW, GW) are synchronous and are controlled by a positive-
edge-triggered clock input (CK). Output enable (G) and power
down control (ZZ) are asynchronous inputs. Burst cycles can
be initiated with either ADSP or ADSC inputs. In Burst mode,
subsequent burst addresses are generated internally and are
controlled by ADV. The burst address counter may be
configured to count in either linear or interleave order with the
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS8321EV18/32/36E operates on a 1.8 V power supply.
All input are 1.8 V compatible. Separate output power (V
)
DDQ
pins are used to decouple output noise from the internal circuits
and are 1.8 V compatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
t
2.5 2.7 3.0 3.5 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.6 7.5 ns
KQ
Pipeline
3-1-1-1
tCycle
Curr (x18) 285 250 215 200 190 165 mA
Curr (x32/x36) 330 290 255 235 220 195 mA
t
5.5 6.0 6.5 7.0 7.5 8.5 ns
5.5 6.0 6.5 7.0 7.5 8.5 ns
KQ
Flow
Through
2-1-1-1
tCycle
Curr (x18) 205 195 185 175 165 155 mA
Curr (x32/x36) 235 225 210 200 190 175 mA
Rev: 1.03 4/2005
1/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
165 Bump BGA—x18 Commom I/O—Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
NC
A
E1
BB
NC
E3
BW
ADSC
ADV
A
A
A
B
C
D
E
F
NC
NC
A
E2
NC
BA
CK
GW
G
ADSP
A
NC
NC
NC
NC
NC
NC
DQA
DQA
DQA
DQA
NC
A
NC
DQPA
DQA
DQA
DQA
DQA
ZZ
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
SS
DD
DD
DD
DD
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
DD
DD
DD
DD
DDQ
DDQ
DDQ
DDQ
DDQ
NC
DQB
DQB
DQB
DQB
MCL
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
NC
NC
G
H
J
NC
G
H
J
FT
NC
NC
DQB
DQB
DQB
DQB
DQPB
NC
V
V
NC
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
K
L
NC
V
V
V
V
V
V
V
V
NC
K
L
NC
NC
M
N
P
R
NC
NC
M
N
P
R
NC
V
NC
TDI
A
NC
V
NC
DDQ
SS
SS
DDQ
NC
A
A
A
A1
A0
TDO
TCK
A
A
A
A
LBO
A
A
TMS
A
A
A
11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch
Rev: 1.03 4/2005
2/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
165 Bump BGA—x32 Common I/O—Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
NC
A
E1
BC
BB
E3
BW
ADSC
ADV
A
NC
A
B
C
D
E
F
NC
NC
A
E2
BD
BA
CK
GW
G
ADSP
A
NC
NC
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
NC
DDQ
DDQ
DDQ
DDQ
DDQ
SS
DD
DD
DD
DD
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
DD
DD
DD
DD
DDQ
DDQ
DDQ
DDQ
DDQ
DQC
DQC
DQC
DQC
FT
DQC
DQC
DQC
DQC
MCL
DQD
DQD
DQD
DQD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DQB
DQB
DQB
DQB
NC
DQB
DQB
DQB
DQB
ZZ
G
H
J
G
H
J
NC
NC
DQD
DQD
DQD
DQD
NC
V
V
DQA
DQA
DQA
DQA
NC
DQA
DQA
DQA
DQA
NC
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
K
L
V
V
V
V
V
V
V
V
K
L
M
N
P
R
M
N
P
R
V
NC
TDI
A
NC
V
SS
DDQ
SS
DDQ
NC
NC
A
A
A
A1
A0
TDO
TCK
A
A
A
A
A
LBO
A
A
TMS
A
A
A
11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch
Rev: 1.03 4/2005
3/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
165 Bump BGA—x36 Common I/O—Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
NC
A
E1
BC
BB
E3
BW
ADSC
ADV
A
NC
A
B
C
D
E
F
NC
DQPC
DQC
DQC
DQC
DQC
FT
A
E2
BD
BA
CK
GW
G
ADSP
A
NC
DQPB
DQB
DQB
DQB
DQB
ZZ
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
NC
DDQ
DDQ
DDQ
DDQ
DDQ
SS
DD
DD
DD
DD
DD
DD
DD
DD
DD
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DD
DD
DD
DD
DD
DD
DD
DD
DD
DDQ
DDQ
DDQ
DDQ
DDQ
DQC
DQC
DQC
DQC
MCL
DQD
DQD
DQD
DQD
NC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DQB
DQB
DQB
DQB
NC
G
H
J
G
H
J
NC
NC
DQD
DQD
DQD
DQD
DQPD
NC
V
V
DQA
DQA
DQA
DQA
NC
DQA
DQA
DQA
DQA
DQPA
A
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
K
L
V
V
V
V
V
V
V
V
K
L
M
N
P
R
M
N
P
R
V
NC
TDI
A
NC
V
SS
DDQ
SS
DDQ
NC
A
A
A
A1
A0
TDO
TCK
A
A
A
A
LBO
A
A
TMS
A
A
A
11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch
Rev: 1.03 4/2005
4/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
GS8321EV18/32/36E 165-Bump BGA Pin Description
Symbol
A0, A1
A
Type
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
I
I
DQA
DQB
DQC
DQD
I/O
Data Input and Output pins
BA, BB, BC, BD
I
—
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low
No Connect
NC
CK
Clock Input Signal; active high
Byte Write—Writes all enabled bytes; active low
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
BW
I
GW
I
E1
I
E3
I
Chip Enable; active low
E2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
ADSC, ADSP
ZZ
I
Burst address counter advance enable; active l0w
Address Strobe (Processor, Cache Controller); active low
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Scan Test Mode Select
I
I
FT
I
LBO
TMS
TDI
I
I
I
Scan Test Data In
O
I
Scan Test Data Out
TDO
TCK
MCL
Scan Test Clock
—
I
Must Connect Low
V
Core power supply
DD
V
I
I
I/O and Core Ground
SS
V
Output driver power supply
DDQ
Rev: 1.03 4/2005
5/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
GS8321EV18/32/36 Block Diagram
Register
A0–An
D
Q
A0
A1
A0
A1
D0
D1
Q0
Q1
Counter
Load
A
LBO
ADV
Memory
Array
CK
ADSC
ADSP
Q
D
Register
GW
BW
BA
D
Q
36
36
Register
D
Q
BB
BC
BD
4
4
Register
D
Q
Register
D
Q
Register
36
D
Q
36
36
36
32
Register
D
E1
Q
4
Parity
Encode
Register
D
Q
4
Parity
Compare
FT
G
36
0
Power Down
Control
DQx1–DQx9
NC
NC
ZZ
Note: Only x36 version shown for simplicity.
Rev: 1.03 4/2005
6/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Mode Pin Functions
Mode Name
Pin
Name
State
Function
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Burst Order Control
LBO
H
L
Output Register Control
FT
H or NC
L or NC
H
Active
Power Down Control
ZZ
Standby, I = I
DD SB
Note:
There are pull-up devices on the FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
1st address
2nd address
3rd address
4th address
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.03 4/2005
7/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Byte Write Truth Table
Function
Read
GW
BW
H
L
BA
X
BB
X
BC
X
BD
X
Notes
1
H
H
H
H
H
H
H
L
Read
H
L
H
H
L
H
H
H
L
H
H
H
H
L
1
Write byte a
Write byte b
Write byte c
Write byte d
Write all bytes
Write all bytes
L
2, 3
L
H
H
H
L
2, 3
L
H
H
L
2, 3, 4
2, 3, 4
2, 3, 4
L
H
L
L
L
X
X
X
X
X
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x36 version.
Rev: 1.03 4/2005
8/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Synchronous Truth Table
Operation
State
3
4
Diagram
Address Used
E1
ADSP ADSC
ADV
W
DQ
5
Key
Deselect Cycle, Power Down
Read Cycle, Begin Burst
None
External
External
External
Next
X
R
H
L
X
L
L
X
L
X
X
X
X
L
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
Q
Q
D
Q
Q
D
D
Q
Q
D
D
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
R
L
L
X
H
X
H
H
H
H
X
H
X
H
X
H
X
W
L
CR
CR
CW
CW
H
H
H
H
H
H
H
H
Next
L
Next
L
Next
L
Current
Current
Current
Current
H
H
H
H
Notes:
1. X = Don’t Care, H = High, L = Low
2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.03 4/2005
9/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Simplified State Diagram
X
Deselect
W
R
W
R
X
R
X
First Write
First Read
CW
CR
CR
W
R
R
X
Burst Write
X
Burst Read
CR
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.03 4/2005
10/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Simplified State Diagram with G
X
Deselect
W
R
W
R
X
W
R
X
First Write
First Read
CR
CW
CW
CR
W
R
R
W
X
Burst Write
X
Burst Read
CR
CW
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.03 4/2005
11/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
)
SS
Symbol
Description
Value
Unit
V
V
Voltage on V Pins
–0.5 to 3.6
DD
DD
V
Voltage in V
Pins
DDQ
–0.5 to 3.6
V
DDQ
V
–0.5 to V
+0.5 (≤ 3.6 V max.)
DDQ
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
V
I/O
V
–0.5 to V +0.5 (≤ 3.6 V max.)
V
IN
DD
I
+/–20
+/–20
mA
mA
W
IN
I
OUT
P
1.5
D
o
T
–55 to 125
–55 to 125
C
STG
o
T
Temperature Under Bias
C
BIAS
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
1.6
Typ.
1.8
Max.
2.0
Unit
V
Notes
V
1.8 V Supply Voltage
DD
1.8 V V
I/O Supply Voltage
V
1.6
1.8
2.0
V
DDQ
DDQ
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
DDn
Recommended Operating Temperatures
Parameter
Symbol
Min.
0
Typ.
25
Max.
70
Unit
°C
Notes
T
Ambient Temperature (Commercial Range Versions)
2
2
A
T
Ambient Temperature (Industrial Range Versions)
–40
25
85
°C
A
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
DDn
Rev: 1.03 4/2005
12/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Logic Levels
Parameter
Symbol
Min.
Typ.
—
Max.
Unit
Notes
V
Input High Voltage
Input Low Voltage
V
0.6*V
V
+ 0.3
DD
V
V
V
V
1
DD
IH
DD
V
V
0.3*V
DD
–0.3
—
1
DD
IL
V
I/O Input High Voltage
I/O Input Low Voltage
V
0.6*V
V
+ 0.3
DDQ
—
1,3
1,3
DDQ
IHQ
DD
V
V
0.3*V
DD
–0.3
—
DDQ
ILQ
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
DDn
3.
V
(max) is voltage on V
pins plus 0.3 V.
DDQ
IHQ
Undershoot Measurement and Timing
Overshoot Measurement and Timing
V
IH
20% tKC
V
+ 2.0 V
50%
DD
V
SS
50%
V
DD
V
– 2.0 V
SS
20% tKC
V
IL
Capacitance
o
(T = 25 C, f = 1 MHZ, V = 2.5 V)
A
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
pF
C
V
= 0 V
Input Capacitance
4
6
5
7
IN
IN
C
V
OUT
= 0 V
Input/Output Capacitance
pF
I/O
Note:
These parameters are sample tested.
Rev: 1.03 4/2005
13/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
AC Test Conditions
Parameter
Conditions
V
– 0.2 V
Input high level
Input low level
DD
0.2 V
1 V/ns
/2
Input slew rate
V
Input reference level
DD
V
/2
Output reference level
Output load
DDQ
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Output Load 1
DQ
*
50Ω
30pF
V
DDQ/2
* Distributed Test Jig Capacitance
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
V = 0 to V
IN DD
–1 uA
1 uA
IL
V
≥ V ≥ V
IN
–1 uA
–1 uA
1 uA
100 uA
DD
IH
IH
I
I
ZZ Input Current
Input Current
IN1
IN2
0 V ≤ V ≤ V
IN
V
≥ V ≥ V
IN
–100 uA
–1 uA
1 uA
1 uA
DD
IL
IL
0 V ≤ V ≤ V
IN
I
Output Disable, V
= 0 to V
= 1.6 V
Output Leakage Current
Output High Voltage
Output Low Voltage
–1 uA
1 uA
—
OL
OUT
DD
V
I
= –4 mA, V
V
– 0.4 V
DDQ
OH1
OH
DDQ
V
I
= 4 mA, V = 1.6 V
OL DD
—
0.4 V
OL1
Rev: 1.03 4/2005
14/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Rev: 1.03 4/2005
15/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Operating Currents
-250
–40
-225
–40
-200
–40
-166
–40
-150
–40
0
to
0
to
0
to
0
to
0
to
0
to
Parameter
Test Conditions
Mode
Symbol
to
to
to
to
to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C
I
280
50
290
50
245
45
255
45
215
40
225
40
200
35
210
35
190
30
200
30
170
25
DD
Pipeline
I
I
I
I
DDQ
(x32/
x36)
I
Flow
Through
210
25
220
25
200
25
210
25
190
20
200
20
180
20
190
20
170
20
180
20
160
15
DD
Device Selected;
All other inputs
≥V or ≤ V
DDQ
Operating
Current
IH
IL
I
260
25
270
25
225
25
235
25
195
20
205
20
180
20
190
20
170
20
180
20
150
15
DD
Pipeline
Output open
DDQ
(x18)
I
Flow
Through
190
15
200
15
180
15
190
15
170
15
180
15
160
15
170
15
150
15
160
15
140
15
DD
DDQ
I
Pipeline
40
40
75
65
50
50
80
70
40
40
75
65
50
50
80
70
40
40
70
60
50
50
75
65
40
40
70
60
50
50
75
65
40
40
65
55
50
50
70
60
40
40
60
50
SB
Standby
Current
ZZ ≥ V – 0.2 V
—
—
DD
Flow
Through
I
SB
I
Pipeline
DD
Device Deselected;
All other inputs
≥ V or ≤ V
Deselect
Current
Flow
Through
I
DD
IH
IL
Notes:
1.
I
and I
apply to any combination of V , V , V
, and V
operation.
DDQ2
DD
DDQ
DD3 DD2 DDQ3
2. All parameters listed are worst case scenario.
Rev: 1.03 4/2005
16/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
AC Electrical Characteristics
-250
-225
-200
-166
-150
-133
Parameter
Symbol
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Clock Cycle Time
tKC
tKQ
5.5
—
—
5.5
—
—
—
—
—
—
6.0
—
—
6.0
—
—
—
—
—
—
6.5
—
—
6.5
—
—
—
—
—
—
7.0
—
—
7.0
—
—
—
—
—
—
7.5
—
—
7.5
—
—
—
—
—
—
8.5
—
3.0
3.0
1.5
0.5
1.7
2
—
8.5
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
Clock to Output Valid
Clock to Output Invalid
tKQX
3.0
3.0
1.5
0.5
1.3
1.5
3.0
3.0
1.5
0.5
1.3
1.5
3.0
3.0
1.5
0.5
1.3
1.5
3.0
3.0
1.5
0.5
1.3
1.5
3.0
3.0
1.5
0.5
1.5
1.7
Flow
Through
1
Clock to Output in Low-Z
tLZ
Setup time
Hold time
tS
tH
Clock HIGH Time
Clock LOW Time
tKH
tKL
Clock to Output in
High-Z
1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0 1.5 3.0 1.5 3.0
ns
tHZ
G to Output Valid
G to output in Low-Z
G to output in High-Z
ZZ setup time
tOE
—
0
2.5
—
2.5
—
—
—
—
0
2.7
—
2.7
—
—
—
—
0
3.2
—
3.0
—
—
—
—
0
3.5
—
3.0
—
—
—
—
0
3.8
—
3.0
—
—
—
—
0
4.0
—
3.0
—
—
—
ns
ns
ns
ns
ns
ns
1
tOLZ
1
—
5
—
5
—
5
—
5
—
5
—
5
tOHZ
2
tZZS
2
ZZ hold time
1
1
1
1
1
1
tZZH
ZZ recovery
tZZR
20
20
20
20
20
20
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 1.03 4/2005
17/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Pipeline Mode Timing (DCD)
Begin
Read A Cont
Deselect Deselect Write B Read C Read C+1 Read C+2 Read C+3 Cont
tKL
Deselect Deselect
tKH
tKC
CK
ADSP
tS
tS
ADSC initiated read
tH
ADSC
ADV
tS
tH
tH
A
B
C
Ao–An
GW
tS
tS
tH
tH
BW
tS
Ba–Bd
E1
tS
tS
tS
Deselected with E1
tH
E2 and E3 only sampled with ADSC
tH
tH
E2
E3
G
tS
D(B)
tKQ
tHZ
tOE
tOHZ
Q(A)
tH
tLZ
tKQX
Hi-Z
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
DQa–DQd
Rev: 1.03 4/2005
18/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Flow Through Mode Timing (DCD)
Begin
Read A Cont
tKH
Deselect Write B
tKC
Read C Read C+1 Read C+2 Read C+3 Read C Deselect
tKL
CK
Fixed High
ADSP
tS
tH
tS
tH
ADSC initiated read
ADSC
ADV
Ao–An
GW
tH
tS
tS
tH
tS
tH
A
B
C
tS
tH
tS
tH
BW
tH
tS
Ba–Bd
E1
tS
Deselected with E1
tH
E1 masks ADSP
tS
tH
E2 and E3 only sampled with ADSP and ADSC
E1 masks ADSP
E2
tS
tH
E3
G
tH
tS
tOE
tKQ
tKQX
tHZ
tOHZ
D(B)
tLZ
Q(A)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
DQa–DQd
Rev: 1.03 4/2005
19/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I 2. The duration of
SB
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I 2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
SB
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tKH
tKC
tKL
CK
Setup
Hold
ADSP
ADSC
tZZR
tZZS
tZZH
ZZ
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs (like this one) do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention.
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with V . The JTAG output
DD
drivers are powered by V
.
DDQ
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either V or V . TDO should be left unconnected.
DD
SS
Rev: 1.03 4/2005
20/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
JTAG Pin Descriptions
Pin
Pin Name
I/O
Description
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate
from the falling edge of TCK.
TCK
Test Clock
In
The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP
TMS
TDI
Test Mode Select
Test Data In
In controller state machine. An undriven TMS input will produce the same result as a logic one input
level.
The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers
placed between TDI and TDO. The register placed between TDI and TDO is determined by the
In state of the TAP Controller state machine and the instruction that is currently loaded in the TAP
Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce
the same result as a logic one input level.
Output that is active depending on the state of the TAP state machine. Output changes in
Out response to the falling edge of TCK. This is the output side of the serial registers placed between
TDI and TDO.
TDO
Test Data Out
Note:
This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is
held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.
JTAG Port Registers
Overview
The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s
and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the
rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the
TDI and TDO pins.
Instruction Register
The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or
the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the
TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the
controller is placed in Test-Logic-Reset state.
Bypass Register
The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through
the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.
Boundary Scan Register
The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.
The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The
Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
Rev: 1.03 4/2005
21/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
JTAG TAP Block Diagram
·
·
·
·
·
·
·
·
Boundary Scan Register
·
·
·
0
Bypass Register
2
1 0
Instruction Register
TDI
TDO
ID Code Register
31 30 29
2 1
0
·
· · ·
Control Signals
Test Access Port (TAP) Controller
TMS
TCK
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
Die
Revision
Code
GSI Technology
JEDEC Vendor
ID Code
I/O
Not Used
Configuration
Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
1
1
1
x72
x36
x18
X
X
X
X
X
X
X
X
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
Rev: 1.03 4/2005
22/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
JTAG Tap Controller State Diagram
Test Logic Reset
1
0
1
1
1
Run Test Idle
Select DR
Select IR
0
0
0
1
1
1
1
Capture DR
Capture IR
0
0
Shift DR
Shift IR
0
0
1
1
Exit1 DR
Exit1 IR
0
0
Pause DR
Pause IR
0
0
0
0
1
1
Exit2 DR
Exit2 IR
1
1
Update DR
Update IR
1
0
1
0
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-
tate testing of other devices in the scan path.
Rev: 1.03 4/2005
23/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
places the boundary scan register between the TDI and TDO pins.
EXTEST
EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is
still determined by its input pins.
Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.
Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruc-
tion is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not asso-
ciated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associ-
ated.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-
Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.
RFU
These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
Rev: 1.03 4/2005
24/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
JTAG TAP Instruction Set Summary
Instruction
EXTEST
Code
000
Description
Notes
1
Places the Boundary Scan Register between TDI and TDO.
Preloads ID Register and places it between TDI and TDO.
IDCODE
001
1, 2
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
SAMPLE-Z
010
011
TDO.
1
1
Forces all RAM output drivers to High-Z.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
RFU
SAMPLE/
PRELOAD
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
100
101
110
111
1
1
1
1
GSI
GSI private instruction.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
RFU
BYPASS
Places Bypass Register between TDI and TDO.
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Rev: 1.03 4/2005
25/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
V
0.6 * V
V
+0.3
DD
1.8 V Test Port Input High Voltage
1.8 V Test Port Input Low Voltage
TMS, TCK and TDI Input Leakage Current
TMS, TCK and TDI Input Leakage Current
TDO Output Leakage Current
Test Port Output High Voltage
Test Port Output Low Voltage
V
V
1
1
IHJ
DD
V
0.3 * V
1
–0.3
–300
–1
ILJ
DD
I
uA
uA
uA
V
2
INHJ
I
100
1
3
INLJ
I
–1
4
OLJ
V
1.7
—
5, 6
5, 7
5, 8
5, 9
OHJ
V
—
0.4
—
V
OLJ
V
V
– 100 mV
DDQ
Test Port Output CMOS High
V
OHJC
V
Test Port Output CMOS Low
—
100 mV
V
OLJC
Notes:
1. Input Under/overshoot voltage must be –2 V > Vi < V
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tTKC.
DDn
2.
V
≤ V ≤ V
ILJ
IN
DDn
ILJn
3. 0 V ≤ V ≤ V
IN
4. Output Disable, V
= 0 to V
DDn
OUT
5. The TDO output driver is served by the V
supply.
DDQ
6.
7.
8.
9.
I
I
I
I
= –4 mA
OHJ
= + 4 mA
OLJ
= –100 uA
= +100 uA
OHJC
OHJC
JTAG Port AC Test Conditions
Parameter
Conditions
JTAG Port AC Test Load
V
– 0.2 V
Input high level
Input low level
DQ
DD
0.2 V
1 V/ns
*
50Ω
Input slew rate
30pF
V
V
/2
Input reference level
DDQ
V
/2
DDQ
/2
Output reference level
DDQ
* Distributed Test Jig Capacitance
Notes:
1. Include scope and jig capacitance.
2. Test conditions as as shown unless otherwise noted.
Rev: 1.03 4/2005
26/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
JTAG Port Timing Diagram
tTKC
tTKH
tTKL
TCK
TDI
tTH
tTH
tTS
tTS
TMS
TDO
tTKQ
tTH
tTS
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
Symbol
tTKC
tTKQ
tTKH
tTKL
tTS
Min
Max
—
Unit
TCK Cycle Time
50
—
ns
ns
ns
ns
ns
ns
TCK Low to TDO Valid
TCK High Pulse Width
TCK Low Pulse Width
TDI & TMS Set Up Time
TDI & TMS Hold Time
20
—
20
20
10
10
—
—
tTH
—
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
Rev: 1.03 4/2005
27/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Package Dimensions—165-Bump FPBGA (Package E; Variation 1)
A1
1
TOP VIEW
BOTTOM VIEW
M
M
A1
Ø0.10
Ø0.25 C AB
C
Ø0.44~0.64(165x)
2
3 4 5 6 7 8 9 10 11
11 10 9 8 7 6 5 4 3 2 1
A
B
C
D
E
F
A
B
C
D
E
F
G
H
I
G
H
J
J
K
L
M
N
P
K
L
M
N
P
R
R
A
1.0
10.0
1.0
15±0.05
B
0.20(4x)
SEATING PLANE
C
Rev: 1.03 4/2005
28/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs
2
Speed
3
1
Org
Type
Package
T
Part Number
A
(MHz/ns)
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
1M x 32
1M x 32
1M x 32
1M x 32
1M x 32
1M x 32
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
GS8321EV18E-250
GS8321EV18E-225
GS8321EV18E-200
GS8321EV18E-166
GS8321EV18E-150
GS8321EV18E-133
GS8321EV32E-250
GS8321EV32E-225
GS8321EV32E-200
GS8321EV32E-166
GS8321EV32E-150
GS8321EV32E-133
GS8321EV36E-250
GS8321EV36E-225
GS8321EV36E-200
GS8321EV36E-166
GS8321EV36E-150
GS8321EV36E-133
GS8321EV18E-250I
GS8321EV18E-225I
GS8321EV18E-200I
GS8321EV18E-166I
GS8321EV18E-150I
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
250/5.5
225/6
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
I
200/6.5
166/7
150/7.5
133/8.5
250/5.5
225/6
200/6.5
166/7
150/7.5
133/8.5
250/5.5
225/6
200/6.5
166/7
150/7.5
133/8.5
250/5.5
225/6
I
200/6.5
166/7
I
I
150/7.5
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321EV18E-166IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.
A
A
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.03 4/2005
29/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
2
Speed
3
1
Org
Type
Package
T
Part Number
A
(MHz/ns)
2M x 18
1M x 32
1M x 32
1M x 32
1M x 32
1M x 32
1M x 32
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
1M x 32
1M x 32
1M x 32
1M x 32
1M x 32
GS8321EV18E-133I
GS8321EV32E-250I
GS8321EV32E-225I
GS8321EV32E-200I
GS8321EV32E-166I
GS8321EV32E-150I
GS8321EV32E-133I
GS8321EV36E-250I
GS8321EV36E-225I
GS8321EV36E-200I
GS8321EV36E-166I
GS8321EV36E-150I
GS8321EV36E-133I
GS8321EV18GE-250
GS8321EV18GE-225
GS8321EV18GE-200
GS8321EV18GE-166
GS8321EV18GE-150
GS8321EV18GE-133
GS8321EV32GE-250
GS8321EV32GE-225
GS8321EV32GE-200
GS8321EV32GE-166
GS8321EV32GE-150
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
165 BGA (var. 1)
165 BGA (var. 1)
133/8.5
250/5.5
225/6
I
I
I
I
I
I
I
I
I
I
I
I
I
165 BGA (var. 1)
165 BGA (var. 1)
200/6.5
166/7
165 BGA (var. 1)
165 BGA (var. 1)
150/7.5
133/8.5
250/5.5
225/6
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
200/6.5
166/7
165 BGA (var. 1)
165 BGA (var. 1)
150/7.5
133/8.5
250/5.5
225/6
165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
C
C
C
C
C
C
C
C
C
C
C
200/6.5
166/7
150/7.5
133/8.5
250/5.5
225/6
200/6.5
166/7
150/7.5
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321EV18E-166IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.
A
A
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.03 4/2005
30/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
2
Speed
3
1
Org
Type
Package
T
Part Number
A
(MHz/ns)
1M x 32
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
2M x 18
1M x 32
1M x 32
GS8321EV32GE-133
GS8321EV36GE-250
GS8321EV36GE-225
GS8321EV36GE-200
GS8321EV36GE-166
GS8321EV36GE-150
GS8321EV36GE-133
GS8321EV18GE-250I
GS8321EV18GE-225I
GS8321EV18GE-200I
GS8321EV18GE-166I
GS8321EV18GE-150I
GS8321EV18GE-133I
GS8321EV32GE-250I
GS8321EV32GE-225I
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
Pb-free 165 BGA (var. 1)
133/8.5
250/5.5
225/6
C
C
C
C
C
C
C
I
200/6.5
166/7
150/7.5
133/8.5
250/5.5
225/6
I
200/6.5
166/7
I
I
150/7.5
133/8.5
250/5.5
225/6
I
I
I
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321EV18E-166IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.
A
A
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.03 4/2005
31/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
2
Speed
3
1
Org
Type
Package
T
Part Number
A
(MHz/ns)
1M x 32
1M x 32
1M x 32
1M x 32
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
1M x 36
GS8321EV32E-200I
GS8321EV32E-166I
GS8321EV32E-150I
GS8321EV32E-133I
GS8321EV36E-250I
GS8321EV36E-225I
GS8321EV36E-200I
GS8321EV36E-166I
GS8321EV36E-150I
GS8321EV36E-133I
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
DCD Pipeline/Flow Through
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
165 BGA (var. 1)
200/6.5
166/7
I
I
I
I
I
I
I
I
I
I
150/7.5
133/8.5
250/5.5
225/6
200/6.5
166/7
150/7.5
133/8.5
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321EV18E-166IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.
A
A
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.03 4/2005
32/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321EV18/32/36E-250/225/200/166/150/133
36Mb Sync SRAM Datasheet Revision History
Types of Changes
Format or Content
DS/DateRev. Code: Old;
Page;Revisions;Reason
New
• Creation of new datasheet
8321EVxx_r1
• Added parity bit designators to x18 and x36 pinouts
• Removed address pin numbers (except 0 and 1)
• Corrected “E” package thickness to 1.4 mm
8321EVxx_r1;
8321EVxx_r1_01
Content
• Updated format
• Added variation information to package mechanical
8321EVxx_r1_01;
8321EVxx_r1_02
Content/Format
Format
• Pb-free information added
8321EVxx_r1_02;
8321EVxx_r1_03
Rev: 1.03 4/2005
33/33
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
相关型号:
GS8321EV18GE-166IT
Cache SRAM, 2MX18, 8ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
GSI
GS8321EV18GE-166T
Cache SRAM, 2MX18, 8ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
GSI
GS8321EV18GE-200IT
Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
GSI
©2020 ICPDF网 联系我们和版权申明