GS880V37BT-225 [GSI]
Cache SRAM, 256KX36, 2.5ns, CMOS, PQFP100, TQFP-100;
| 型号： | GS880V37BT-225 |
| 厂家： | 
GSI TECHNOLOGY |
| 描述： | Cache SRAM, 256KX36, 2.5ns, CMOS, PQFP100, TQFP-100 静态存储器 |
| 文件： | 总19页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
GS880V37BT-333/300/275/250/225/200
100-Pin TQFP
Commercial Temp
Industrial Temp
333 MHz–200 MHz
256K x 36
9Mb Sync Burst SRAMs
1.8 V VDD
1.8 V I/O
their outputs immediately after the deselect command has been
Features
• Single Cycle Deselect (SCD) operation
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
Sleep Mode
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
-333 -300 -275 -250 -225 -200 Unit
The GS880V37BT operates on a 1.8 V power supply. All input
Pipeline
3-1-1-1
t
2.0 2.2 2.3 2.3 2.5 2.7 ns
3.0 3.3 3.6 4.0 4.4 5.0 ns
KQ
are 1.8 V compatible. Separate output power (V
) pins are
tCycle
DDQ
used to decouple output noise from the internal circuits and are
1.8 V compatible.
1.8 V Curr (x32/x36) 435 395 360 330 300 270 mA
Functional Description
Applications
The GS880V37BT is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
SCD Pipelined Reads
The GS880V37BT is a SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are
also available. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
Rev: 1.00 1/2003
1/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
GS880V37B 100-Pin TQFP Pinout
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
DQB9
DQB8
DQB7
DQC9
1
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQC8
2
DQC7
3
V
V
4
DDQ
DDQ
SS
V
V
5
SS
DQB6
DQB5
DQB4
DQB3
DQC6
DQC5
DQC4
DQC3
6
7
8
9
256K x 36
Top View
V
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
SS
DDQ
SS
V
V
DDQ
DQB2
DQC2
DQB1
DQC1
/DNU
V
SS
V
DDQ
NC
V
DD
NC
SS
V
DD
ZZ
V
DQA1
DQA2
DQD1
DQD2
V
V
V
DDQ
DDQ
SS
V
SS
DQA3
DQA4
DQA5
DQA6
DQD3
DQD4
DQD5
DQD6
V
V
V
SS
DDQ
SS
V
DDQ
DQA7
DQA8
DQA9
DQD7
DQD8
DQD9
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 1.00 1/2003
2/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
TQFP Pin Description
Symbol
A0, A1
A2–A17
A18
Type
Description
I
I
I
Address field LSBs and Address Counter preset Inputs
Address Inputs
Address Input
DQA1–DQA9
DQB1–DQB9
DQC1–DQC9
DQD1–DQD98
I/O
Data Input and Output pins
NC
—
I
No Connect
BW
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQA, DQB Data I/Os; active low
Byte Write Enable for DQC, DQD Data I/Os; active low
Clock Input Signal; active high
BA, BB
BC, BD
CK
I
I
I
GW
I
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
E1, E3
E2
I
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
ADSP, ADSC
ZZ
I
I
LBO
I
Linear Burst Order mode; active low
Core power supply
V
I
DD
V
I
I
I/O and Core Ground
SS
V
Output driver power supply
DDQ
V
or V (must be tied high)
DDQ
DD
V
/DNU
—
or
DDQ
Do Not Use (must be left floating)
Rev: 1.00 1/2003
3/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
GS880V37B Block Diagram
RegisteQr
A0–An
D
A0
A1
A0
A1
D0
D1
Q0
Q1
Counter
A
Load
LBO
ADV
CK
Memory
Array
ADSC
ADSP
Q
D
Register
GW
BW
BA
D
Q
Register
36
36
D
Q
BB
BC
BD
4
Register
D
Q
Register
D
Q
Register
D
Q
Register
E1
E2
E3
D
Q
Register
D
Q
1
G
1
Power Down
Control
DQx1–DQx9
ZZ
Rev: 1.00 1/2003
4/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Mode Pin Functions
Mode Name
Pin
Name
State
Function
L
Linear Burst
Interleaved Burst
Active
Burst Order Control
LBO
H
L or NC
H
Power Down Control
Note:
ZZ
Standby, I = I
DD SB
Thereis a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the
above tables.
Burst Counter Sequences
Linear Burst Sequence
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
1st address
2nd address
3rd address
4th address
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Byte Write Truth Table
Function
Read
GW
H
BW
H
L
BA
X
BB
X
BC
X
BD
X
Notes
1
Read
H
H
L
H
H
L
H
H
H
L
H
H
H
H
L
1
Write byte a
Write byte b
Write byte c
Write byte d
Write all bytes
Write all bytes
H
L
2, 3
2, 3
2, 3
2, 3
2, 3
H
L
H
H
H
L
H
L
H
H
L
H
L
H
L
H
L
L
L
X
X
X
X
X
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Rev: 1.00 1/2003
5/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Synchronous Truth Table
Operation
State
Address
Used
2
3
4
Diagram
E1
ADSP ADSC ADV
E
W
DQ
5
Key
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Read Cycle, Begin Burst
None
None
X
X
H
L
X
X
L
L
X
L
X
X
X
X
X
X
L
X
X
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
F
F
T
T
T
X
X
X
X
X
X
X
X
High-Z
None
X
L
L
H
L
High-Z
External
External
External
Next
R
X
L
Q
Q
D
Q
Q
D
D
Q
Q
D
D
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
R
L
L
X
H
X
H
X
H
X
H
H
H
H
X
H
X
H
X
H
X
W
L
CR
CR
CW
CW
H
H
H
H
H
H
H
H
Next
L
Next
L
Next
L
Current
Current
Current
Current
H
H
H
H
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.00 1/2003
6/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Simplified State Diagram
X
Deselect
W
R
W
R
X
R
X
First Write
First Read
CW
CR
CR
W
R
R
X
Burst Write
X
Burst Read
CR
CR
CW
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.00 1/2003
7/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Simplified State Diagram with G
X
Deselect
W
R
W
R
X
W
R
X
First Write
First Read
CR
CW
CW
CR
W
R
R
W
X
Burst Write
X
Burst Read
CR
CR
CW
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.00 1/2003
8/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Absolute Maximum Ratings
(All voltages reference to V
)
SS
Symbol
Description
Value
Unit
V
V
Voltage on V Pins
–0.5 to 3.6
DD
DD
V
Voltage in V
Pins
DDQ
–0.5 to 3.6
V
DDQ
V
Voltage on Clock Input Pin
Voltage on I/O Pins
–0.5 to 3.6
+0.5 (≤ 3.6 V max.)
DDQ
V
CK
V
–0.5 to V
V
I/O
V
–0.5 to V +0.5 (≤ 3.6 V max.)
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
V
IN
DD
I
+/–20
+/–20
mA
mA
W
IN
I
OUT
P
1.5
D
o
T
–55 to 125
–55 to 125
C
STG
o
T
Temperature Under Bias
C
BIAS
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Rev: 1.00 1/2003
9/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Power Supply Voltage Ranges
Parameter
Symbol
Min.
1.6
Typ.
1.8
Max.
2.0
Unit
V
V
1.8 V Supply Voltage
DD
1.8 V V
I/O Supply Voltage
V
1.6
1.8
2.0
V
DDQ
DDQ
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
I/O Logic Levels
Parameter
Symbol
Min.
Typ.
—
Max.
Unit
Notes
1, 2
V
Input High Voltage
Input Low Voltage
V
0.6*V
V
+ 0.3
DD
V
V
V
V
DD
IH
DD
V
V
0.3*V
DD
–0.3
—
1, 2
DD
IL
V
I/O Input High Voltage
I/O Input Low Voltage
V
0.6*V
V
+ 0.3
DDQ
—
1, 2, 3
1, 2
DDQ
IHQ
DD
V
V
0.3*V
DD
–0.3
—
DDQ
ILQ
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
0
Typ.
25
Max.
70
Unit
°C
T
Ambient Temperature (Commercial Range Versions)
Ambient Temperature (Industrial Range Versions)
A
T
–40
25
85
°C
A
Note:
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Rev: 1.00 1/2003
10/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Undershoot Measurement and Timing
Overshoot Measurement and Timing
V
IH
20% tKC
V
+ 2.0 V
50%
DD
V
SS
50%
V
DD
V
– 2.0 V
SS
20% tKC
V
IL
Capacitance
o
(T = 25 C, f = 1 MHZ, V = 1.8 V)
A
DD
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
pF
C
V
= 0 V
Input Capacitance
4
6
5
7
IN
IN
C
V
OUT
= 0 V
Input/Output Capacitance
pF
I/O
Note: These parameters are sample tested.
Package Thermal Characteristics
Rating
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
Junction to Case (TOP)
Notes:
Layer Board
Symbol
Max
40
Unit
Notes
1,2
R
R
R
single
four
—
°C/W
°C/W
°C/W
ΘJA
ΘJA
ΘJC
24
1,2
9
3
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 1.00 1/2003
11/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
AC Test Conditions
Parameter
Conditions
V
– 0.2 V
Input high level
Input low level
DD
0.2 V
1 V/ns
/2
Input slew rate
V
Input reference level
DD
V
/2
Output reference level
Output load
DDQ
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Output Load 1
DQ
*
50Ω
30pF
V
DDQ/2
* Distributed Test Jig Capacitance
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
V = 0 to V
IN DD
–1 uA
1 uA
IL
V
≥ V ≥ V
IN
–1 uA
–1 uA
1 uA
100 uA
DD
IH
IH
I
I
ZZ Input Current
Input Current
IN1
IN2
0 V ≤ V ≤ V
IN
V
≥ V ≥ V
IN
–100 uA
–1 uA
1 uA
1 uA
DD
IL
IL
0 V ≤ V ≤ V
IN
I
Output Disable, V
= 0 to V
Output Leakage Current
Output High Voltage
Output Low Voltage
–1 uA
– 0.4 V
DDQ
1 uA
—
OL
OUT
DD
V
I
= –4 mA, V
= 1.6 V
V
OH
OH
DDQ
V
I
= 4 mA, V = 1.6 V
OL DD
—
0.4 V
OL
Rev: 1.00 1/2003
12/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Rev: 1.00 1/2003
13/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
AC Electrical Characteristics
-333
-300
-275
-250
-225
-200
Parameter
Symbol
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
tKC
tKQ
3.0
—
1.0
1.0
1.0
0
—
2.0
—
—
—
—
2.0
2.0
—
—
3.3
—
—
2.2
—
—
—
—
2.2
2.2
—
—
3.6
—
—
2.3
—
—
—
—
2.3
2.3
—
—
4.0
—
—
2.3
—
—
—
—
2.3
2.3
—
—
4.4
—
—
2.5
—
—
—
—
2.5
2.5
—
—
5.0
—
—
2.7
—
—
—
—
2.7
2.7
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tKQX
1.0
1.0
1.1
0.1
—
1.0
1.0
1.1
0.1
—
1.0
1.0
1.2
0.2
—
1.0
1.0
1.3
0.3
—
1.0
1.0
1.4
0.4
—
1
tLZ
Pipeline
tS
tH
Hold time
G to Output Valid
G to output in High-Z
Clock HIGH Time
Clock LOW Time
tOE
—
—
1.3
1.5
1
—
—
—
—
—
tOHZ
tKH
1.3
1.5
1.3
1.5
1.3
1.5
1.3
1.5
1.3
1.5
tKL
Clock to Output in
High-Z
1
1.0
2.0
1.0
2.2
1.0
2.3
1.5
2.3
1.5
2.5
1.5
2.7
ns
tHZ
1
G to output in Low-Z
ZZ setup time
ZZ hold time
0
5
—
—
—
—
0
5
—
—
—
—
0
5
—
—
—
—
0
5
—
—
—
—
0
5
—
—
—
—
0
5
—
—
—
—
ns
ns
ns
ns
tOLZ
2
tZZS
tZZH
2
1
1
1
1
1
1
ZZ recovery
tZZR
20
20
20
20
20
20
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 1.00 1/2003
14/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Rev: 1.00 1/2003
15/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I 2. The duration of
SB
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I 2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
SB
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
CK
tH
tS
tKC
tKL
tKH
ADSP
ADSC
ZZ
tZZH
tZZS
tZZR
Snooze
Application Tips
Single and Dual Cycle Deselect
SCD devices (like this one) force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with
the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually
assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention.
Rev: 1.00 1/2003
16/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
TQFP Package Drawing
θ
L
c
L1
Symbol
Description
Standoff
Min. Nom. Max
A1
A2
b
0.05
1.35
0.20
0.09
0.10
1.40
0.30
—
0.15
1.45
0.40
0.20
22.1
20.1
16.1
14.1
—
Body Thickness
Lead Width
c
Lead Thickness
D
Terminal Dimension 21.9
Package Body 19.9
Terminal Dimension 15.9
22.0
20.0
16.0
14.0
0.65
0.60
1.00
e
D1
E
b
E1
e
Package Body
Lead Pitch
13.9
—
L
Foot Length
Lead Length
Coplanarity
Lead Angle
0.45
—
0.75
—
L1
Y
A1
A2
E1
E
0.10
7°
θ
0°
—
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
Rev: 1.00 1/2003
17/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Ordering Information for GSI Synchronous Burst RAMs
2
Speed
(MHz)
3
1
Org
Type
Package
Status
T
Part Number
A
256K x 36
256K x 36
256K x 36
256K x 36
256K x 36
256K x 36
GS880V37BT-333
GS880V37BT-300
GS880V37BT-275
GS880V37BT-250
GS880V37BT-225
GS880V37BT-200
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
Pipeline
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
TQFP
333
300
275
250
225
200
333
300
275
250
225
200
C
C
C
C
C
C
I
256K x 36 GS880V37BT-333I
256K x 36 GS880V37BT-300I
256K x 36 GS880V37BT-275I
256K x 36 GS880V37BT-250I
256K x 36 GS880V37BT-225I
256K x 36 GS880V37BT-200I
Notes:
I
I
I
I
I
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS880V37BT-250IT.
2. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.
A
A
3. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.00 1/2003
18/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
9M Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
• Creation of new datasheet
880V37B_r1
Rev: 1.00 1/2003
19/19
© 2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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