G1332E [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | G1332E |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
GTM
CORPORATION
BVDSS
DS(ON)
20V
600mꢀ
600mA
G1332E
R
I
D
N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T
Description
The G1332E provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*2KV ESD Rating (Per MIL-STD-883D)
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
REF.
REF.
Min.
2.70
2.40
1.40
0.35
0
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Min.
Max.
A
B
C
D
E
F
G
H
K
J
L
M
1.90 REF.
1.00
0.10
0.40
0.85
0°
1.30
0.20
-
1.15
10°
0.45
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
20
Unit
V
Gate-Source Voltage
VGS
±5
V
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
ID @T
ID @T
A
=25к
=70к
600
470
2.5
mA
mA
A
A
IDM
PD @T
A
=25к
1.0
W
0.008
W/к
к
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-a
Value
125
Unit
к/W
Thermal Resistance Junction-ambient3 Max.
G1332E
Page: 1/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
20
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
0.5
-
0.02
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=5V, ID=600mA
VGS= ±5V
1.2
VGS(th)
gfs
Forward Transconductance
1
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
-
±10
uA
uA
uA
IGSS
-
-
1
VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
10
VDS=16V, VGS=0
-
-
600
VGS=4.5V, ID=600mA
VGS=2.5V, ID=400mA
Static Drain-Source On-Resistance
mꢀ
RDS(ON)
-
-
1200
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
1.3
0.3
0.5
4
2
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=600mA
VDS=16V
VGS=4.5V
nC
-
-
-
-
-
VDS=10V
ID=600mA
-
10
15
2
-
ns
VGS=10V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=16.7ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
38
17
12
60
-
Ciss
Coss
Crss
VGS=0V
pF
-
VDS=10V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
Unit
Test Conditions
IS=300mA, VGS=0V
-
-
1.2
V
VSD
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, tЉ10sec.
G1332E
Page: 2/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
G1332E
Page: 3/4
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G1332E
Page: 4/4
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