G2402 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | G2402 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2004/11/22
GTM
CORPORATION
REVISED DATE :2005/03/22B
G2402
BVDSS
DS(ON)
20V
250mΩ
3.2A
R
N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T
I
D
Description
The G2402 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
ԦUltra Low On-Resistance
ԦFast Switching
Applications
ԦPower Management in Notebook Computer
ԦPortable Equipment
ԦBattery Powered System.
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
Min.
Max.
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.90 REF.
1.00
0.10
0.40
0.85
0̓
1.30
0.20
-
1.15
10̓
0.45
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
20
Unit
V
Gate-Source Voltage
VGS
V
A
A
A
f12
3.2
2.6
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
ID @T
ID @T
A
=25к
=70к
A
IDM
7.4
PD @T
A
=25к
Power Dissipation
Linear Derating Factor
1.38
0.01
-55 ~ +150
W
W/ć
ć
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Symbol
Rthj-a
Ratings
Unit
ć/W
Thermal Resistance Junction-ambient3 Max.
90
G2402
Page: 1/4
ISSUED DATE :2004/11/22
REVISED DATE :2005/03/22B
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
BVDSS
20
-
0.1
-
-
-
V
VGS=0, ID=250uA
V/к
Reference to 25к, ID=1mA
Ϧ
BVDSS/ Tj
Ϧ
-
VGS(th)
gfs
0.7
1.2
-
V
VDS= VGS, ID=250uA
VDS=10V, ID=0.47A
VGS= ̈́12V
Forward Transconductance
-
-
-
-
6
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
IGSS
nA
uA
uA
-
1.0
10
VDS=20V, VGS=0
VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
250
ID=0.93A, VGS=4.5V
Static Drain-Source On-Resistance2
RDS(ON)
mӨ
-
-
-
-
-
-
-
-
-
-
-
-
350
ID=0.47A, VGS=2.7V
ID=3.6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
4.4
0.6
1.9
5.2
37
-
-
-
-
-
-
-
-
-
-
nC
VDS=10V
VGS=4.5V
VDS=10V
ID=3.6A
RG=6Ө
VGS=5v
RD=2.8Ө
ns
Turn-off Delay Time
Fall Time
Td(off)
Tf
15
5.7
145
100
50
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
V
GS=0V
pF
VDS=10V
f=1.0MHz
Source-Drain Diode
Forward On Voltage2
IS=1.6A, VGS=0 Tj=25к
VSD
-
-
-
-
-
-
1.2
1
V
A
A
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)1
IS
VD= VG=0V, VS=1.2V
ISM
7.4
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270к/w when mounted on min. copper pad.
Characteristics Curve
G2402
Page: 2/4
ISSUED DATE :2004/11/22
REVISED DATE :2005/03/22B
GTM
CORPORATION
G2402
Page: 3/4
ISSUED DATE :2004/11/22
REVISED DATE :2005/03/22B
GTM
CORPORATION
Important Notice:
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ó
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G2402
Page: 4/4
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