G301K [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | G301K |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
30V
1ꢀ
G301K
R
I
D
640mA
N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T
Description
The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The G301K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
TPU.34)QBDLBHF*
Millimeter
Millimeter
Min. Max.
1.90 REF.
REF.
REF.
Min.
Max.
3.10
2.80
1.60
0.50
0.10
0.55
A
B
C
D
E
F
2.70
2.40
1.40
0.35
0
G
H
K
J
L
M
1.00
1.30
0.20
-
0.10
0.40
0.85
0°
1.15
10°
0.45
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
30
Unit
V
Gate-Source Voltage
VGS
±16
V
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
ID @T
ID @T
A
=25к
=70к
640
mA
mA
mA
W
A
500
IDM
950
Power Dissipation
PD @T
A
=25к
1.38
0.01
Linear Derating Factor
Operating Junction and Storage Temperature Range
W/к
к
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-a
Value
90
Unit
к/W
Thermal Resistance Junction-ambient3 Max.
G301K
Page: 1/4
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
0.5
-
0.06
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=600mA
VGS= ±16V
1.5
VGS(th)
gfs
Forward Transconductance
600
-
-
mS
uA
uA
uA
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±10
IGSS
-
-
1
VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
100
VDS=24V, VGS=0
-
-
1
2
3
1.6
-
VGS=10V, ID=500mA
VGS=4.5V, ID=400mA
VGS=2.7V, ID=200mA
Static Drain-Source On-Resistance
ꢀ
-
-
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
1
Qg
Qgs
Qgd
Td(on)
Tr
ID=600mA
VDS=50V
VGS=4.5V
nC
-
0.5
0.5
12
10
56
29
32
8
-
-
-
-
VDS=30V
ID=600mA
VGS=10V
RG=3.3ꢀ
RD=52ꢀ
-
-
ns
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
50
-
Ciss
Coss
Crss
VGS=0V
pF
-
VDS=25V
f=1.0MHz
-
6
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
Unit
Test Conditions
IS=1.2A, VGS=0V
-
-
1.2
V
VSD
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G301K
Page: 2/4
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
G301K
Page: 3/4
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G301K
Page: 4/4
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