GDBAS40 [GTM]

SURFACE MOUNT SCHOTTKY BARRIER DIODE; 表面贴装肖特基二极管
GDBAS40
型号: GDBAS40
厂家: GTM CORPORATION    GTM CORPORATION
描述:

SURFACE MOUNT SCHOTTKY BARRIER DIODE
表面贴装肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISSUED DATE :2005/12/20  
REVISED DATE :  
GTM  
CORPORATION  
GDBAS40  
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E  
V O LT AG E 4 0 V, C U R R E N T 0 . 2 A  
Description  
The GDBAS40 is designed for high speed switching applications, circuit protection and voltage clamping.  
Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand  
held and portable applications where space is limited.  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
1.05  
0.10  
1.00  
1.45  
1.80  
2.70  
Min.  
Max.  
A
A1  
A2  
D
E
HE  
0.85  
0
L
b
c
0.20  
0.25  
0.10  
0.40  
0.40  
0.18  
0.80  
1.15  
1.60  
2.30  
Q1  
0.15 BSC.  
Absolute Maximum Ratings at T  
Parameter  
A = 25к  
Symbol  
Tj  
Ratings  
-55 ~ +125  
-55 ~ +150  
40  
Unit  
к
Operating Junction Temperature  
Storage Temperature  
Tstg  
VRRM  
RJA  
IFSM  
Io  
к
Maximum Repetitive Peak Reverse Voltage  
Thermal Resistance Junction to Ambient Air  
Peak Forward Surge Current at tp < 1.0s  
Maximum Average Forward Rectified Current  
Total Power Dissipation  
V
445  
к/W  
A
0.6  
0.2  
A
PD  
225  
mW  
Electrical Characteristics (at T  
A
= 25к unless otherwise noted)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Reverse Breakdown Voltage  
V
(BR)R  
40  
-
-
-
-
-
V
IR=10A  
380  
1000  
200  
5.0  
IF1=1mA  
Forward Voltage(tp < 300uS)  
VF  
mV  
-
IF2=40mA  
Reverse Leakage Current  
Total Capacitance  
IR  
-
nA  
pF  
ns  
VR=30V  
C
T
-
-
-
VR=0V, f=1MHz  
IF=IR=10mA, RL=100, Irr=1mA  
Reverse Recover Time  
T
rr  
-
5.0  
GDBAS40  
Page: 1/2  
ISSUED DATE :2005/12/20  
REVISED DATE :  
GTM  
CORPORATION  
Characteristics Curve  
Important Notice:  
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ó
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.  
GTM reserves the right to make changes to its products without notice.  
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.  
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
Head Office And Factory:  
ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.  
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785  
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China  
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165  
ó
GDBAS40  
Page: 2/2  

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