GI01L60 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GI01L60 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/08/19
GTM
CORPORATION
REVISED DATE :
BVDSS
DS(ON)
600V
12Ω
1A
GI01L60
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters.
Features
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-251
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
7.80
Min.
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
6.40
5.20
6.80
7.20
G
H
J
K
L
0.50
2.20
0.45
0.45
0.90
5.40
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
600
V
V
VGS
f30
ID @T
ID @T
IDM
PD @T =25к
C
=25к
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
1
A
C
=100к
0.8
A
3
29
A
C
Total Power Dissipation
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.232
0.5
W/ć
mJ
A
EAS
IAR
Avalanche Current
1
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
0.5
mJ
ć
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-case
Rthj-amb
Value
4.3
Unit
ć/W
ć/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
110
G
I01L60
Page: 1/4
ISSUED DATE :2005/08/19
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
600
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=1mA
Ϧ
BVDSS
/Ϧ
V/к
V
-
2.0
-
0.8
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
VGS= ̈́30V
4.0
Forward Transconductance
0.8
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
nA
uA
uA
Ө
IGSS
-
-
10
VDS=600V, VGS=0
VDS=480V, VGS=0
VGS=10V, ID=0.5A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
100
Static Drain-Source On-Resistance3
Total Gate Charge3
-
-
12
-
RDS(ON)
Qg
-
4.0
1.0
1.1
6.6
5.0
11.7
9.2
170
30.7
5.1
ID=1A
VDS=480V
VGS=10V
nC
ns
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
-
Qgs
-
-
Qgd
-
-
Td(on)
Tr
Td(off)
Tf
VDD=300V
ID=1A
-
-
VGS=10V
Turn-off Delay Time
Fall Time
-
-
RG=3.3Ө
RD=300Ө
-
-
Input Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
VDS=25V
f=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.2
1
Unit
V
Test Conditions
-
-
-
-
VSD
IS=1A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
A
IS
VD=VG=0V, VS=1.2V
1
Pulsed Source Current (Body Diode
)
5
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=1.0mH, RG=25Ө, IAS=1.0A.
3. Pulse widthЉ300us, duty cycleЉ2%.
G
I01L60
Page: 2/4
ISSUED DATE :2005/08/19
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
G
I01L60
Page: 3/4
ISSUED DATE :2005/08/19
REVISED DATE :
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G
I01L60
Page: 4/4
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