GI50L02 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GI50L02 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/12/16
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
25V
15mꢀ
45A
GI50L02
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GI50L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Characteristic
Package Dimensions
TO-251
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
7.80
Min.
0.50
2.20
0.45
0.45
0.90
5.40
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
6.40
5.20
6.80
7.20
G
H
J
K
L
2.30 REF.
0.60
0.90
M
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
25
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
45
A
C
=100к
30
A
140
A
Total Power Dissipation
C
44.6
W
W/к
к
Linear Derating Factor
0.36
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.8
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
G
I50L02
Page: 1/5
ISSUED DATE :2005/12/16
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
25
-
0.037
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VGS= ±20V
3.0
VGS(th)
gfs
Forward Transconductance
10
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
-
-
1
25
15
35
-
VDS=25V, VGS=0
VDS=20V, VGS=0
VGS=10V, ID=20A
VGS=4.5V, ID=10A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
-
Static Drain-Source On-Resistance
mꢀ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
11.5
2.1
8.4
7
Qg
Qgs
Qgd
Td(on)
Tr
ID=20A
nC
-
-
VDS=20V
VGS=5V
-
-
-
-
V
DS=15V
ID=20A
GS=10V
-
60
17
9
-
ns
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=0.75ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
390
245
100
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
1.26
45
Unit
V
Test Conditions
-
-
-
-
VSD
IS=45A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
A
IS
VD=VG=0V, VS=1.26V
1
Pulse Source Current (Body Diode
)
140
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
G
I50L02
Page: 2/5
ISSUED DATE :2005/12/16
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
v.s. Case Temperature
G
I50L02
Page: 3/5
ISSUED DATE :2005/12/16
REVISED DATE :
GTM
CORPORATION
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
G
I50L02
Page: 4/5
ISSUED DATE :2005/12/16
REVISED DATE :
GTM
CORPORATION
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
ó
ó
ó
ó
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
ó
ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G
I50L02
Page: 5/5
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