GJ03N70 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GJ03N70 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
600V
4.0ꢀ
3.3A
GJ03N70
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC
converter applications.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
600
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
3.3
A
C
=100к
2.1
A
13.2
45
A
Total Power Dissipation
C
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.36
85
W/к
mJ
A
EAS
IAR
Avalanche Current
3.3
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
3.3
mJ
к
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.8
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
GJ03N70
Page: 1/5
ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
600
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
2.0
-
0.6
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=1.6A
VGS= ±30V
4.0
VGS(th)
gfs
Forward Transconductance
2.0
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±1
uA
uA
uA
ꢀ
IGSS
-
-
100
VDS=600V, VGS=0
VDS=480V, VGS=0
VGS=10V, ID=1.6A
IDSS
Drain-Source Leakage Current(Tj=150к)
Static Drain-Source On-Resistance
Total Gate Charge3
-
-
500
-
-
4.0
RDS(ON)
Qg
-
11.4
3.1
4.2
8.4
6
-
-
-
-
-
-
-
ID=3.3A
nC
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
VDS=480V
Qgs
VGS=10V
-
Qgd
-
Td(on)
Tr
Td(off)
Tf
VDD=300V
ID=3.3A
-
ns
VGS=10V
RG=10ꢀ
RD=91ꢀ
Turn-off Delay Time
-
17.7
5.9
600
45
4
Fall Time
-
Input Capacitance
-
Ciss
Coss
Crss
VGS=0V
pF
Output Capacitance
-
-
-
VDS=25V
f=1.0MHz
Reverse Transfer Capacitance
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.5
Unit
V
Test Conditions
-
-
-
-
VSD
IS=3.3A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
-
3.3
A
IS
VD= VG=0V, VS=1.5V
1
Pulsed Source Current (Body Diode
)
13.2
A
ISM
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=15mH, RG=25ꢀ, IAS=3.3A.
3. Pulse widthЉ300us, duty cycleЉ2%.
GJ03N70
Page: 2/5
ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ03N70
Page: 3/5
ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
GJ03N70
Page: 4/5
ISSUED DATE :2005/01/05
REVISED DATE :
GTM
CORPORATION
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ03N70
Page: 5/5
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