GSMBTA94 [GTM]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | GSMBTA94 |
| 厂家： | 
GTM CORPORATION |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总2页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISSUED DATE :2005/08/31
REVISED DATE :
GTM
CORPORATION
GSMBTA94
P N P E P I T AX I A L P L A N A R T R A N S I S T O R
Description
The GSMBTA94 is designed for application requires high voltage.
Package Dimensions
Millimeter
Millimeter
Min. Max.
0.42 REF.
REF.
REF.
Min.
Max.
1.10
0.10
1.00
2.20
1.35
2.40
A
A1
A2
D
E
HE
0.80
L1
L
b
c
e
0
0.15
0.25
0.10
0.35
0.40
0.25
0.80
1.80
1.15
1.80
0.65 REF.
0.15 BSC.
Q1
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Tj
Tstg
Ratings
+150
-55~+150
-400
-400
-6
Unit
ć
ć
V
V
V
VCBO
VCEO
VEBO
I
C
-300
350
mA
mW
Total Power Dissipation
PD
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
V
Test Conditions
BVCBO
-400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
C
=-100uA, I
=-1mA, I =0
=0
E=0
BVCEO
BVEBO
-400
-
V
C
B
-6
-
-
-100
-100
-350
-500
-750
-750
-
V
E=-10uA, IC
I
I
CBO
nA
nA
mV
mV
mV
mV
V
CB=-200V, IE=0
EBO
-
V
EB=-3V, I =0
C
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
1
2
3
-
I
I
I
I
C
=-1mA, IB=-0.1mA
-
C
C
C
=-20mA, I
=-50mA, I
=-10mA, I
CE=-10V, I
CE=-10V, I
CE=-10V, I
CE=-10V, I
CB=-10V, I
B
B
B
C
C
C
C
=-2mA
-
=-5mA
-
=-1mA
*hFE
*hFE
*hFE
*hFE
Cob
1
2
3
4
40
50
45
40
-
V
V
V
V
V
=-1mA
-
=-10mA
=-50mA
=-100mA
-
-
6
pF
E=0, f=1MHz
* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%
GSMBTA94
Page: 1/2
ISSUED DATE :2005/08/31
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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GSMBTA94
Page: 2/2
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