GT6924E [GTM]
N-CHANNEL MOSFET WITH SWITCHING DIODE; 带开关二极管的N沟道MOSFET
| 型号： | GT6924E |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL MOSFET WITH SWITCHING DIODE |
| 文件： | 总4页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2006/01/25
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
20V
600mꢀ
1A
GT6924E
R
I
D
N - C H A N N E L M O S F E T W I T H S C H O T T K Y D I O D E
Description
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode
Package Dimensions
Millimeter
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.80
0.55
0.10
10°
A
B
C
D
E
F
2.70
2.60
1.40
0.30
0
G
H
I
J
K
L
0°
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
Unit
V
Drain-Source Voltage (MOSFET)
Gate-Source Voltage (MOSFET)
Continuous Drain Current3 (MOSFET)
Continuous Drain Current3 (MOSFET)
Pulsed Drain Current1 (MOSFET)
Reverse Voltage (Schottky)
20
± 6
VGS
V
ID @T
ID @T
A
=25к
=70к
1.0
A
A
0.8
A
IDM
VKA
IF
8
A
20
V
Average Forward Current (Schottky)
Pulsed Forward Current1 (Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
0.5
A
IFM
2.0
A
PD @T
A=25к
0.9
W
W
к
0.9
Tj, Tstg
-55 ~ +125
Thermal Data
Parameter
Symbol
Rthj-a
Value
110
Unit
к/W
к/W
3
Thermal Resistance Junction-ambient (MOSFET)
M
M
ax.
ax.
3
Thermal Resistance Junction-ambient (Schottky)
110
GT6924E
Page: 1/4
ISSUED DATE :2006/01/25
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
20
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
0.5
-
0.02
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=5V, ID=600mA
VGS= ± 6V
1.2
VGS(th)
gfs
Forward Transconductance
1
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
-
±10
uA
uA
uA
IGSS
-
-
1
VDS=20V, VGS=0
VDS=16V, VGS=0
VGS=4.5V, ID=1A
VGS=2.5V, ID=0.5A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
10
-
-
600
Static Drain-Source On-Resistance
mꢀ
RDS(ON)
-
-
850
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
1.3
0.3
0.5
21
53
100
125
38
17
12
2
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=600mA
VDS=16V
VGS=4.5V
nC
-
-
-
-
-
V
DS=10V
ID=600mA
GS=5V
-
-
Ns
pF
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢀ
RD=16.7ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
60
-
Ciss
Coss
Crss
VGS=0V
-
VDS=10V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
-
-
1.2
V
VSD
IS=750mA, VGS=0V
Schottky Characteristics (Tj = 25к)
Parameter
Symbol Min.
Typ.
Max.
0.5
100
-
Unit
V
Test Conditions
IF=500mA
Forward Voltage Drop
-
-
-
-
-
VF
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
uA
pF
VR=20V
21
VR=10V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tЉ5sec; 180к/W when mounted on Min. copper pad.
GT6924E Page: 2/4
ISSUED DATE :2006/01/25
REVISED DATE :
GTM
MOSFET Characteristics Curve
CORPORATION
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GT6924E
Page: 3/4
ISSUED DATE :2006/01/25
REVISED DATE :
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Schottky Diode Characteristics Curve
Fig 1. Reverse Leakage Current v.s. Junction Temperature
Fig 12. Forward Voltage Drop
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GT6924E
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