GU15P10 [GTM]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
| 型号： | GU15P10 |
| 厂家： | 
GTM CORPORATION |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
-100V
210mꢁ
-16A
GU15P10
R
I
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU15P10 (TO-263 package) is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.30
0.5
Min.
Max.
1.45
1.47
9.0
A
b
L4
c
4.40
0.76
0.00
0.36
c2
b2
D
1.25
1.17
8.6
e
2.54 REF.
L3
L1
E
1.50 REF.
L
ꢀ
L2
14.6
0˚
1.27 REF.
15.8
8˚
2.29
9.80
2.79
10.4
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
-100
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
-16
A
C
=100к
-9.8
A
-64
A
Total Power Dissipation
C
96
W
Linear Derating Factor
0.77
W/к
к
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Rthj-c
Value
1.3
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
62
GU15P10
Page: 1/4
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-100
-
-
V
BVDSS
Tj
VGS=0, ID=-1mA
Ϧ
BVDSS
/Ϧ
-
-0.1
-
-
V/к
V
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-10V, ID=-9A
VGS= ±20V
-1.0
-3.0
VGS(th)
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
mꢁ
IGSS
-
-25
VDS=-100V, VGS=0
VDS=-80V, VGS=0
VGS=-10V, ID=-9A
IDSS
Drain-Source Leakage Current(Tj=150к)
Static Drain-Source On-Resistance2
Total Gate Charge2
-
-100
-
210
RDS(ON)
Qg
37
5
60
ID=-9A
nC
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
VDS=-80V
VGS=-10V
Qgs
Qgd
Td(on)
Tr
15
11
25
56
36
1180
250
75
3.6
-
-
VDS=-50V
ID=-9A
VGS=-10V
RG=10ꢁ
RD=5.6ꢁ
-
ns
Turn-off Delay Time
-
Td(off)
Tf
Fall Time
-
Input Capacitance
1900
Ciss
Coss
Crss
Rg
VGS=0V
pF
Output Capacitance
-
-
VDS=-25V
f=1.0MHz
Reverse Transfer Capacitance
Gate Resistance
5
ꢁ
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
-1.3
VSD
IS=-9A, VGS=0V
Reverse Recovery Time2
Trr
-
-
95
-
-
ns
IS=-9A, VGS=0V
dI/dt=100A/ꢂs
Reverse Recovery Charge
Qrr
410
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GU15P10
Page: 2/4
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GU15P10
Page: 3/4
ISSUED DATE :2006/01/19
REVISED DATE :
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GU15P10
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