GU85T08 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GU85T08 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/03/08
GTM
CORPORATION
REVISED DATE :
BVDSS
DS(ON)
80V
13mΩ
75A
GU85T08
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU85T08 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.30
0.5
Min.
Max.
1.45
1.47
9.0
A
b
L4
c
4.40
0.76
0.00
0.36
c2
b2
D
1.25
1.17
8.6
e
2.54 REF.
L3
L1
E
1.50 REF.
L
ꢀ
L2
14.6
0˚
1.27 REF.
15.8
8˚
2.29
9.80
2.79
10.4
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
80
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
V
f20
75
ID @T
ID @T
IDM
PD @T =25к
C
=25к
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
A
C
=100к
48
A
260
A
C
Total Power Dissipation
138
W
Linear Derating Factor
Single Pulse Avalanche Energy3
1.11
450
W/ć
mJ
A
EAS
IAR
Avalanche Current
30
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
ć
Thermal Data
Parameter
Symbol
Rthj-c
Value
0.9
Unit
ć/W
ć/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
62
GU85T08
Page: 1/4
ISSUED DATE :2005/03/08
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
80
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=1mA
Ϧ
BVDSS
/Ϧ
V/к
V
-
1.0
-
0.09
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=45A
VGS= ̈́20V
3.0
Forward Transconductance
70
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
nA
uA
uA
IGSS
-
-
10
VDS=80V, VGS=0
VDS=64V, VGS=0
VGS=10V, ID=45A
VGS=4.5V, ID=25A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
100
-
-
13
Static Drain-Source On-Resistance2
mӨ
RDS(ON)
-
-
18
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
63
23
38
30
100
144
173
100
Qg
Qgs
Qgd
Td(on)
Tr
ID=45A
VDS=64V
VGS=4.5V
nC
-
-
-
-
-
-
-
-
-
V
DS=40V
ID=45A
GS=10V
-
ns
V
Turn-off Delay Time
Fall Time
-
Td(off)
Tf
RG=10Ө
RD=0.89Ө
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
6300 10080
Ciss
Coss
Crss
Rg
VGS=0V
VDS=25V
f=1.0MHz
pF
-
670
350
1.1
-
-
-
Ө
-
1.7
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
1.3
VSD
IS=45A, VGS=0V
Reverse Recovery Time2
Trr
-
-
47
86
-
-
ns
IS=20A, VGS=0V
dI/dt=100A/ꢁs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Staring Tj=25к, VDD=30V, L=1mH, RG=25Ө, IAS=30A.
GU85T08
Page: 2/4
ISSUED DATE :2005/03/08
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GU85T08
Page: 3/4
ISSUED DATE :2005/03/08
REVISED DATE :
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Fig 11. Transfer Characteristics
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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ó
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GU85T08
Page: 4/4
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