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元器件品牌
G2308E
[GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
元器件型号：
G2308E
生产厂家：
GTM CORPORATION
描述和应用：
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
PDF文件：
总4页 (文件大小：330K)
下载文档：
下载PDF数据表文档文件
型号参数：G2308E参数
查看货源
G2308S
Oblong, Domed, PCB Mount
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22
IDEA
G2309
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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156
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46
GTM
G231
Compact MiniDIP, 2W Single & Dual Output DC/DC Converters
Warning
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156
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24
MPD
G2310
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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156
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59
GTM
G2313
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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156
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38
GTM
G2314
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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156
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50
GTM
G2317
高效带ESD保护MOS
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14
GTM
G2317
专业MOS代理 13724384199
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8
ETC
G231I
Compact MiniDIP, 2W High Isolation DC/DC Converters
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6
MPD
G231RW
Compact MiniDIP, 2W Wide Input Range DC/DC Converters
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156
-
8
MPD
G232
Compact MiniDIP, 2W Single & Dual Output DC/DC Converters
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22
MPD
G-232.4OHM1%
RESISTOR, WIRE WOUND, 1.5 W, 1 %, 20 ppm, 32.4 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-232.4OHM1.0%
RESISTOR, WIRE WOUND, 1.5 W, 1 %, 20 ppm, 32.4 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-232.4OHM1.0%
RESISTOR, WIRE WOUND, 1.5 W, 1 %, 20 ppm, 32.4 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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VISHAY
G-2324OHM1.0%
RESISTOR, WIRE WOUND, 1.5 W, 1 %, 20 ppm, 324 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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VISHAY
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