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元器件品牌
G3314
[GTM]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
元器件型号：
G3314
生产厂家：
GTM CORPORATION
描述和应用：
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P沟道增强型功率MOSFET
PDF文件：
总4页 (文件大小：384K)
下载文档：
下载PDF数据表文档文件
型号参数：G3314参数
查看货源
G33270007
Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, SMD, 2 PIN
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1
DIODES
G3355K
SAW COMPONENTS
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37
ETC
G3-37
GENERAL-PURPOSE PHOTOVOLTAIC CELL
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24
ETC
G-3-380
Wirewound Resistors, Military, MIL-PRF-26 Qualified, Type RW, Precision Power, Silicone Coated
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VISHAY
G-3-380
RESISTOR, WIRE WOUND, 2 W, 0.1; 0.25; 0.5; 1; 3; 5 %, 20; 50; 90 ppm, 0.1 ohm - 2740 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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156
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0
VISHAY
G-3-3800.174OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.174 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.174OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.174 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.178OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.178 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.178OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.178 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.191OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.191 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.191OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.191 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.215OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.215 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.232OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.232 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3800.768OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.768 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
G-3-3801.78OHM1.0%
RESISTOR, WIRE WOUND, 2 W, 1 %, 50 ppm, 1.78 ohm, THROUGH HOLE MOUNT, AXIAL LEADED
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0
VISHAY
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